Optical phase shifter and optical switch device using ferroelectric material

Patent metadata

Field	Value
Publication number	US-10901246-B2
Application number	US-201916528633-A
Country	US
Kind code	B2
Filing date	Aug 1, 2019
Priority date	Aug 3, 2018
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.

First claim

What is claimed is:

1. An optical phase shifter comprising:
a first semiconductor layer formed on a substrate;
a second semiconductor layer having opposite polarity to the first semiconductor layer;
an insulating layer including a ferroelectric layer and at least one paraelectric layer, the insulating layer disposed between the first semiconductor layer and the second semiconductor layer;
a first electrode connected to the first semiconductor layer; and
a second electrode connected to the second semiconductor layer,
wherein a thickness ratio between the ferroelectric layer and the at least one paraelectric layer determines the presence or absence of hysteresis in electrical properties of an optical phase interferometer, or determines charge collection efficiency.

2. The optical phase shifter according to claim 1 , wherein the ferroelectric layer includes at least one of a material with high permittivity (high-k materials) doped with a metal element and an adjusted thickness to have ferroelectric properties, Perovskite dielectrics, or organics having ferroelectric properties.

3. The optical phase shifter according to claim 1 , wherein the ferroelectric layer includes a metal element-doped HfO 2 selected from at least one of Y-doped HfO 2 , Si-doped HfO 2 , Al-doped HfO 2 , Sr-doped HfO 2 , Gd-doped HfO 2 , La-doped HfO 2 or HfZrO 2 , or a Perovskite dielectric of at least one of PZT or BaTiO 3 .

4. The optical phase shifter according to claim 1 , wherein the at least one paraelectric layer includes a paraelectric layer proximate to the first semiconductor layer.

5. The optical phase shifter according to claim 4 , wherein the insulating layer further includes a paraelectric layer proximate to the second semiconductor layer.

6. The optical phase shifter according to claim 1 , wherein thickness of the insulating layer is smaller than thickness of the first semiconductor layer and the second semiconductor layer, and determines an intensity of focused light.

7. An optical interferometer comprising the optical phase shifter according to claim 1 .

8. The optical phase shifter according to claim 1 , wherein the ferroelectric material comprises the metal element-doped HfO 2 .

9. The optical phase shifter according to claim 1 , further comprising a capacitor that is connected to the first electrode and includes a ferroelectric material, and a capacitor that is connected to the second electrode and includes a ferroelectric material.

10. A semiconductor-insulator-semiconductor (SIS) optical phase shifter comprising:
a first semiconductor layer formed on a substrate;
a second semiconductor layer having opposite polarity to the first semiconductor layer, and including a taper such that light can travel from the first semiconductor layer to the second semiconductor layer;
an insulating layer formed between the first semiconductor layer and the second semiconductor layer, including a ferroelectric layer and at least one paraelectric layer;
a first electrode connected to the first semiconductor layer;
a second electrode connected to the second semiconductor layer;
a capacitor including a ferroelectric material that is connected to the first electrode or the second electrode; and
a circuit for charging the capacitor, wherein the optical phase shifter has a hybrid structure,
wherein a thickness ratio between the ferroelectric layer and the at least one paraelectric layer determines the presence or absence of hysteresis in electrical properties of an optical phase interferometer, or determines charge collection efficiency.

11. The optical phase shifter according to claim 10 , wherein the ferroelectric material includes at least one of material with high permittivity (high-k materials) doped with a metal element or having an adjusted thickness to have ferroelectric properties, Perovskite dielectrics, and organics having ferroelectric properties.

12. The optical phase shifter according to claim 11 , wherein the ferroelectric material comprises a metal element-doped HfO 2 selected from Y-doped HfO 2 , Si-doped HfO 2 , Al-doped HfO 2 , Sr-doped HfO 2 , Gd-doped HfO 2 , La-doped HfO 2 or HfZrO 2 , or
the ferroelectric material comprises at least one of PZT, BaTiO 3 or PVDF-TrFE.

Assignees

• Korea Inst Sci & Tech

Inventors

• Han Jae-Hoon
• Kim Sanghyeon
• Bidenko Pavlo
• Lee Subin
• Song Jin-Dong

Classifications

• G02F1/0508 Primary

  specially adapted for gating or modulating in optical waveguides · CPC title

• G02F1/025

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/0516

  Operation of the cell; Circuit arrangements · CPC title

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title