Chalcogenide film including a noble metal chalcogenide material, device including the chalcogenide film, and method of forming the chalcogenide film

Patent metadata

Field	Value
Publication number	US-10900115-B2
Application number	US-201716329569-A
Country	US
Kind code	B2
Filing date	Aug 31, 2017
Priority date	Sep 2, 2016
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

First claim

The invention claimed is:

1. A chalcogenide film comprising:
a noble metal chalcogenide material consisting of a noble metal and a chalcogen such that a formula of the noble metal chalcogenide material is MC x ;
wherein M represents the noble metal;
wherein C represents the chalcogen;
wherein x is any one positive value equal to or more than 1.4 and less than 2; and
wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

2. The film according to claim 1 , wherein the chalcogenide film is a monolayer of the noble metal chalcogenide material.

3. The film according to claim 1 , wherein the chalcogenide film is a bilayer of the noble metal chalcogenide material.

4. The film according to claim 1 , wherein the light comprises visible light.

5. The film according to claim 1 , wherein the light comprises infrared light.

6. The film according to claim 5 , wherein the infrared light is mid-infrared light.

7. The film according to claim 1 , wherein the noble metal chalcogenide material is any one material selected from a group consisting of platinum selenide, platinum sulfide, palladium selenide and palladium sulfide.

8. The film according to claim 7 ,
wherein the noble metal chalcogenide material is platinum selenide; and
wherein the noble metal chalcogenide material is any one selected from a group consisting of PtSe 1.8 , PtSe 1.6 , and PtSe 1.4 .

9. A device comprising a chalcogenide film, the chalcogenide film comprising:
a noble metal chalcogenide material consisting of a noble metal and a chalcogen such that a formula of the noble metal chalcogenide material is MC x ;
wherein M represents the noble metal;
wherein C represents the chalcogen;
wherein x is any one positive value equal to or more than 1.4 and less than 2; and
wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

10. The device according to claim 9 , wherein the device is a photodetector or a solar cell.

11. A method of forming a chalcogenide film, the method comprising:
forming a noble metal chalcogenide material consisting of a noble metal and a chalcogen such that a formula of the noble metal chalcogenide material is MC x ;
wherein M represents the noble metal;
wherein C represents the chalcogen;
wherein x is any one positive value equal to or more than 1.4 and less than 2; and
wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

12. The method according to claim 11 ,
wherein forming the noble metal chalcogenide material comprises a chemical vapour transfer process to form one or more single crystals; and
wherein forming the noble metal chalcogenide material further comprises mechanically exfoliating one or more crystalline flakes from the one or more single crystals to form the chalcogenide film.

13. The method according to claim 11 , wherein forming the noble metal chalcogenide material comprises heating a noble metal and a chalcogen in the presence of catalysts.

14. The method according to claim 13 , wherein the catalysts comprise one or more selected from a group consisting of sulfur, phosphorous, bromine and iodine.

15. The method according to claim 14 ,
wherein the noble metal is platinum; and
wherein the chalcogen is selenium.

16. The method according to claim 15 , wherein a molar ratio of platinum:selenium:phosphorous:sulfur of 1:1.8:1:3 is used to form PtSe 1.8 .

17. The method according to claim 15 , wherein a molar ratio of platinum:selenium:phosphorous:sulfur of 1:1.6:1:3 is used to form PtSe 1.6 .

18. The method according to claim 15 , wherein a molar ratio of platinum:selenium:phosphorous:sulfur of 1:1.4:1:3 is used to form PtSe 1.4 .

19. The method according to claim 13 , wherein the heating is carried out in the presence of a transport gas.

20. The method according to claim 19 , wherein the transport gas is iodine or argon.

21. A chalcogenide film formed by a method comprising:
forming a noble metal chalcogenide material consisting of a noble metal and a chalcogen such that a formula of the noble metal chalcogenide material is MC x ;
wherein M represents the noble metal;
wherein C represents the chalcogen;
wherein x is any one positive value equal to or more than 1.4 and less than 2; and
wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

Assignees

• Univ Nanyang Tech

Inventors

• Yu Xuechao
• Yu Peng
• Wang Qijie
• Liu Zheng

Classifications

• H10F77/121

  comprising only selenium or only tellurium · CPC title

• H10F77/12

  Active materials · CPC title

• C23C14/0623

  Sulfides, selenides or tellurides · CPC title

• C23C14/0005

  Separation of the coating from the substrate · CPC title

• C23C14/228 Primary

  Gas flow assisted PVD deposition · CPC title