Integrated optogenetic device with light-emitting diodes and glass-like carbon electrodes

US10898725B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10898725-B2
Application numberUS-201816199627-A
CountryUS
Kind codeB2
Filing dateNov 26, 2018
Priority dateNov 26, 2018
Publication dateJan 26, 2021
Grant dateJan 26, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, the device includes a light-emitting diode (LED) structure communicatively coupled to the first contact layer and a biosensor element communicatively coupled to the second contact layer. The first contact layer is configured to operate as a bottom contact that provides electrical contact to the LED structure. The first contact layer is further configured to be substantially lattice matched with the substrate layer and a bottom layer of the LED structure.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming an integrated optogenetic device, the method comprising: forming a substrate layer, wherein the substrate layer comprises a first substrate region and a second substrate region; forming a first contact layer over the substrate layer in the first substrate region; forming a second contact layer over the substrate layer in the second substrate region; forming a light-emitting diode (LED) structure communicatively coupled to the first contact layer, the LED structure comprising an active layer directly on a first portion of the first contact layer, a dielectric layer that covers sidewalls of the active layer and sidewalls of the first portion of the first contact layer, and a conductive layer positioned on a top surface of the active layer, wherein a glassy-carbon region electrically couples the conductive layer to a second portion of the first contact layer; and forming a biosensor element communicatively coupled to the second contact layer, the biosensor element comprising at least one pillar-shaped electrode body comprising a glass-like carbon material. 2. The method of claim 1 further comprising forming an active layer communicatively coupled to the first contact layer in the first substrate region. 3. The method of claim 1 wherein the first contact layer and the second contact layer comprise ZrB 2 . 4. The method of claim 2 , wherein the active layer is substantially lattice matched with the first contact layer. 5. The method of claim 4 , wherein the active layer comprises a group III nitride materials, selected from the group consisting of gallium nitride (GaN), aluminum nitride (AlN), aluminum nitride (InN), and their alloys such as aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (AlInGaN). 6. The method of claim 1 , wherein forming the biosensor element comprises: forming over the second substrate region a layer of a glass-like carbon material; and removing portions of the layer of the glass-like carbon material to form the at least one pillar. 7. The method of claim 1 , wherein the first contact layer and the second contact layer each comprises a compound having formula XB 2 , where X is zirconium (Zr) or titanium (Ti). 8. The method of claim 1 , wherein the LED structure comprises a plurality of LEDs configured to generate data based on optical parameters.

Assignees

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Classifications

  • Nitrides · CPC title

  • being conductive materials · CPC title

  • Materials · CPC title

  • using chemical vapour deposition [CVD] · CPC title

  • using physical deposition, e.g. vacuum deposition or sputtering · CPC title

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What does patent US10898725B2 cover?
Embodiments of the invention are directed to an integrated optogenetic device. The integrated optogenetic includes a substrate layer having a first substrate region and a second substrate region. The device further includes a first contact formed over the substrate layer in the first substrate region and a second contact layer formed over the substrate layer in the second region. In addition, t…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification A61N5/0622. Mapped technology areas include Human Necessities.
When was this patent published?
Publication date Tue Jan 26 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).