Manufacturing method for semiconductor apparatus and semiconductor apparatus
US-2020176421-A1 · Jun 4, 2020 · US
US10897073B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10897073-B2 |
| Application number | US-201916545816-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 20, 2019 |
| Priority date | Aug 27, 2018 |
| Publication date | Jan 19, 2021 |
| Grant date | Jan 19, 2021 |
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A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.
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What is claimed is: 1. A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more. 2. The receiver according to claim 1 , further comprising, on the first surface of the substrate, a rectifying element which is electrically connected to the antenna and is configured to generate a wave detection current of the terahertz wave. 3. The receiver according to claim 2 , wherein the rectifying element is a Schottky barrier diode. 4. The receiver according to claim 1 , wherein the through electrode is separated from the antenna by a distance that is at least 0.25 times the resonance wavelength and not more than 0.75 times the resonance wavelength. 5. The receiver according to claim 1 , wherein the through electrode is electrically connected to an integrated circuit included in a second substrate that differs from the substrate, and wherein the second surface of the substrate and the second substrate are joined to each other. 6. The receiver according to claim 5 , wherein a reflective plate constituted by a metallic film is included between the antenna and the second substrate. 7. The receiver according to claim 6 , wherein the reflective plate is electrically floating. 8. The receiver according to claim 1 , wherein the antenna is a loop antenna or a dipole antenna. 9. The receiver according to claim 8 , wherein the antenna is a loop antenna, and wherein a length of the loop antenna is any of 0.5 times, 1.5 times, and 2.5 times the resonance wavelength. 10. The receiver according to claim 8 , wherein the antenna is a dipole antenna, and wherein a length of the dipole antenna is 0.5 times the resonance wavelength. 11. The receiver according to claim 1 , wherein a frequency of the terahertz wave is at least 0.03 THz and not more than 30 THz. 12. The receiver according to claim 1 , further comprising an output circuit which is configured to output an electric signal based on the terahertz wave outside. 13. An image forming apparatus, comprising: the receiver according to claim 12 ; and an image processing unit which is configured to form an image based on the electric signal. 14. A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being a surface opposite to the first surface, wherein a distance from the through electrode to the antenna is 37 μm or more. 15. The receiver according to claim 14 , wherein the distance from the through electrode to the antenna is 112 μm or less. 16. The receiver according to claim 14 , wherein the distance from the through electrode to the antenna is 375 μm or more. 17. The receiver according to claim 14 , wherein the distance from the through electrode to the antenna is 1125 μm or less. 18. The receiver according to claim 14 , wherein the antenna is a loop antenna, and wherein a length of the loop antenna is any of 75 μm, 225 μm, 375 μm, 750 μm, 2250 μm, and 3750 μm. 19. The receiver according to claim 14 , wherein the antenna is a dipole antenna, and wherein a length of the dipole antenna is 75 μm or 750 μm. 20. An image forming apparatus, comprising: the receiver according to claim 14 ; and an output circuit which is configured to output an electric signal based on the terahertz wave outside, an image processing unit which is configured to form an image based on the electric signal.
using refracting or diffracting devices, e.g. lens {(radome H01Q1/42)} · CPC title
by structural association with other equipment or articles · CPC title
provided with an AC/DC converting device, e.g. rectennas · CPC title
Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop · CPC title
with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole (H01Q9/44 takes precedence) · CPC title
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