Soldering a conductor to an aluminum metallization

Patent metadata

Field	Value
Publication number	US-10896893-B2
Application number	US-202016820069-A
Country	US
Kind code	B2
Filing date	Mar 16, 2020
Priority date	Jul 31, 2017
Publication date	Jan 19, 2021
Grant date	Jan 19, 2021

Abstract

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

First claim

What is claimed is:

1. A method of soldering a conductor to an aluminum metallization, the method comprising:
applying a halogenide via a plasma process to an aluminum oxide layer on the aluminum metallization to produce a halogenated aluminum oxide layer;
disposing a solder material over the halogenated aluminum oxide layer; and
soldering the conductor to the aluminum metallization.

2. The method of claim 1 , wherein the halogenide comprises a fluorine compound.

3. The method of claim 1 , wherein the halogenide comprises a chlorine compound.

4. The method of claim 1 , wherein the halogenide is selected from one or more of the group consisting of CHF 3 , C 2 F 2 , CH 3 F, CF 4 , and SF 6 .

5. The method of claim 1 , wherein the halogenide is selected from one or more of the group consisting of CHCl 3 , CH 2 Cl 2 , CH 3 Cl, and CCl 3 .

6. The method of claim 1 , wherein the solder material comprises one of PbSnAg, SnAgCu, or Sb—Sn.

7. A method of soldering a conductor to an aluminum metallization, the method comprising:
applying a halogenide via a plasma process to an aluminum oxide layer on the aluminum metallization to produce a halogenated aluminum oxide layer;
applying a flux material to the halogenated aluminum oxide layer;
disposing a solder material over the halogenated aluminum oxide layer; and
soldering the conductor to the aluminum metallization.

8. The method of claim 7 , wherein the flux material is applied during disposing the solder material over the halogenated aluminum oxide layer.

9. The method of claim 7 , wherein the halogenide comprises a fluorine compound.

10. The method of claim 7 , wherein the halogenide comprises a chlorine compound.

11. The method of claim 7 , wherein the halogenide is selected from one or more of the group consisting of CHF 3 , C 2 F 2 , CH 3 F, CF 4 , and SF 6 .

12. The method of claim 7 , wherein the halogenide is selected from one or more of the group consisting of CHCl 3 , CH 2 Cl 2 , CH 3 Cl, and CCl 3 .

13. The method of claim 7 , wherein the solder material comprises one of PbSnAg, SnAgCu, or Sb—Sn.

14. A method of soldering a conductor to an aluminum metallization, the method comprising:
applying a halogenide via a plasma process to an aluminum oxide layer on the aluminum metallization to produce a halogenated aluminum oxide layer;
at least partly reducing the halogenated aluminum oxide layer by applying a reducing gas to the halogenated aluminum oxide layer;
disposing a solder material over the halogenated aluminum oxide layer; and
soldering the conductor to the aluminum metallization.

15. The method of claim 14 , wherein the reducing gas comprises Hz.

16. The method of claim 14 , wherein the halogenide comprises a fluorine compound.

17. The method of claim 14 , wherein the halogenide comprises a chlorine compound.

18. The method of claim 14 , wherein the halogenide is selected from one or more of the group consisting of CHF 3 , C 2 F 2 , CH 3 F, CF 4 , and SF 6 .

19. The method of claim 14 , wherein the halogenide is selected from one or more of the group consisting of CHCl 3 , CH 2 Cl 2 , CH 3 Cl, and CCl 3 .

20. The method of claim 14 , wherein the solder material comprises one of PbSnAg, SnAgCu, or Sb—Sn.

Assignees

• Infineon Technologies Ag

Inventors

• Riedl Edmund
• Li Wu Hu
• Heinrich Alexander
• Otremba Ralf
• Reiss Werner

Classifications

• H10W90/764

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07641

  Controlling the environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07636

  Soldering or alloying · CPC title

• H10W72/07611

  Treating the bonding area before connecting, e.g. by applying flux or cleaning · CPC title