Nanocrystals containing CdTe core with CdS and ZnS coatings
US-9202867-B2 · Dec 1, 2015 · US
US10892394B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10892394-B2 |
| Application number | US-201816043249-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2018 |
| Priority date | Jul 28, 2017 |
| Publication date | Jan 12, 2021 |
| Grant date | Jan 12, 2021 |
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Provided is a higher manganese silicide based telluride composite for thermoelectric conversion, represented by the following general formula (1): (MnsSi 1.740±0.015 ) 1−x (MnTe) x (1) wherein x is the molar fraction of manganese telluride in the higher manganese silicide based telluride composite for thermoelectric conversion and satisfies the relation 0<x≤0.10, and the maximum ZT value is 0.40 or more.
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The invention claimed is: 1. A higher manganese silicide based telluride composite for thermoelectric conversion represented by the following general formula (1): (MnSi 1.740±0.015 ) 1−x (MnTe) x (1) wherein x is the molar fraction of manganese telluride in the higher manganese silicide based telluride composite for thermoelectric conversion and satisfies the relation 0<x≤0.10, and a maximum ZT value of the higher manganese silicide based telluride composite for thermoelectric conversion is 0.40 or more. 2. The higher manganese silicide based telluride composite for thermoelectric conversion according to claim 1 , wherein the composite has a manganese telluride/higher manganese silicide nanoblock composite structure, and the maximum ZT value is 0.55 or more. 3. A preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion represented by the following general formula (1): (MnSi 1.740±0.015 ) 1−x (MnTe) x (1) wherein x is the molar fraction of manganese telluride in the higher manganese silicide based telluride composite for thermoelectric conversion and satisfies the relation 0<x≤0.10, and a maximum ZT value of the higher manganese silicide based telluride composite for thermoelectric conversion is 0.40 or more; and the preparation method comprising the following steps: obtaining a powdery raw material mixture by mixing a manganese raw material, a silicon raw material, and a tellurium raw material in a predetermined ratio and then ball milling the resulting mixture for 1 to 10 hours by using at least one selected from liquid alkanes having 5 to 7 carbon atoms as a medium; drying the powdery raw material mixture; and obtaining the higher manganese silicide based telluride composite for thermoelectric conversion by sintering the raw material mixture after drying. 4. The preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion according to claim 3 , wherein the medium is at least one selected from n-pentane, n-hexane and n-heptane. 5. The preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion according to claim 3 , wherein the Te raw material is Te nanowires, the diameters of the Te nanowires are distributed in a range from 20 to 60 nm, and the aspect ratios of the Te nanowires are 200 or more. 6. The preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion according to claim 5 , wherein the Te nanowires have been subjected to a surface modification with at least one selected from alcohols having 1 to 5 carbon atoms. 7. The preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion according to claim 6 , wherein the alcohols are at least one selected from methanol, ethanol, propanol, butanol, and pentanol. 8. The preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion according to claim 5 , wherein the sintering is performed in an oxygen-free atmosphere at 950 to 1100° C. 9. The preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion according to claim 3 , wherein the sintering is performed at 950 to 1100° C. for 5 to 120 minutes. 10. The preparation method of a higher manganese silicide based telluride composite for thermoelectric conversion according to claim 3 , wherein the sintering is performed under a condition that the axial direction pressure is 20 to 100 MPa.
Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title
Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor · CPC title
Nanometer sized, i.e. from 1-100 nanometer · CPC title
Alloys containing non-metals (C22C1/05, C22C1/08 take precedence) · CPC title
based on silicides · CPC title
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