Soldering a conductor to an aluminum metallization

Patent metadata

Field	Value
Publication number	US-10892247-B2
Application number	US-202016820057-A
Country	US
Kind code	B2
Filing date	Mar 16, 2020
Priority date	Jul 31, 2017
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

First claim

What is claimed is:

1. A method of soldering a conductor to an aluminum metallization, the method comprising:
substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer;
removing metal oxides from the substitute metal oxide layer or substitute metal alloy oxide layer by applying a flux material to the substitute metal oxide layer or to the substitute metal alloy oxide layer to generate a reduced substitute metal layer or substitute metal alloy layer; and
soldering the conductor to the aluminum metallization via the reduced substitute metal layer or reduced substitute metal alloy layer using a solder material.

2. The method of claim 1 , wherein a substitute metal of the substitute metal oxide layer is one of Zn, Cr, Cu, Pb, or Sn.

3. The method of claim 2 , wherein substituting comprises depositing the substitute metal over the aluminum oxide layer by an electrochemical deposition process.

4. The method of claim 2 , wherein substituting comprises depositing the substitute metal over the aluminum oxide layer by an electroless deposition process.

5. The method of claim 1 , wherein a substitute metal alloy of the substitute metal alloy oxide layer comprises at least two of the elements Zn, Cr, V, Cu, Pb, Sn, and Mo.

6. The method of claim 5 , wherein substituting comprises depositing the substitute metal alloy over the aluminum oxide layer by an electrochemical deposition process.

7. The method of claim 5 , wherein substituting comprises depositing the substitute metal alloy over the aluminum oxide layer by an electroless deposition process.

8. The method of claim 1 , wherein substituting comprises applying one or more of hydrofluoric acid (HF) and methanesulfonic acid (MSA) to the aluminum oxide layer.

9. The method of claim 1 , wherein substituting comprises applying a halogenide via a plasma process to the aluminum oxide layer.

10. The method of claim 1 , wherein the flux material comprises a lowly activating flux.

11. The method of claim 1 , wherein the solder material comprises one of PbSnAg, SnAgCu, or Sb—Sn.

12. The method of claim 1 , wherein the solder material comprises at least one of Cu, Ni, Ti, V, Zn, Fe, Ta, and W.

13. A method of soldering a conductor to an aluminum metallization, the method comprising:
substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer;
applying a flux material to the substitute metal oxide layer or to the substitute metal alloy oxide layer; and
soldering the conductor to the aluminum metallization using a solder material, wherein the flux material is applied during soldering the conductor to the aluminum metallization.

14. A method of soldering a conductor to an aluminum metallization, the method comprising:
substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer;
applying a flux material to the substitute metal oxide layer or to the substitute metal alloy oxide layer to dissolve a substitute metal oxide in the substitute metal oxide layer or in the substitute metal alloy oxide layer to generate an oxide-reduced substitute metal or substitute metal alloy layer; and
soldering the conductor to the aluminum metallization via the oxide-reduced substitute metal or substitute metal alloy layer using a solder material.

15. A method of soldering a conductor to an aluminum metallization, the method comprising:
substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer;
applying a flux material to the substitute metal oxide layer or to the substitute metal alloy oxide layer to dissolve a substitute metal oxide in the substitute metal oxide layer or in the substitute metal alloy oxide layer; and
soldering the conductor to the aluminum metallization using a solder material, wherein the flux material is applied during soldering the conductor to the aluminum metallization.

16. A method of soldering a conductor to an aluminum metallization, the method comprising:
substituting an aluminum oxide layer on the aluminum metallization by a ZnO layer;
applying a flux material to the ZnO layer to generate an oxide-reduced Zn layer region; and
soldering the conductor to the aluminum metallization via the oxide-reduced Zn layer region using a PbSnAg solder material.

17. The method of claim 16 , wherein the flux material at least partly reduces ZnO in the ZnO layer.

18. The method of claim 16 , wherein the PbSnAg solder material comprises 95.5Pb-2Sn-2.5Ag solder.

19. The method of claim 16 , wherein the PbSnAg solder material comprises Cu.

20. A method of soldering a conductor to an aluminum metallization, the method comprising:
substituting an aluminum oxide layer on the aluminum metallization by a ZnO layer;
applying a flux material to the ZnO layer; and
soldering the conductor to the aluminum metallization using a PbSnAg solder material, wherein the flux material is applied during soldering the conductor to the aluminum metallization.

Assignees

• Infineon Technologies Ag

Inventors

• Riedl Edmund
• Li Wu Hu
• Heinrich Alexander
• Otremba Ralf
• Reiss Werner

Classifications

• H10W90/764

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07641

  Controlling the environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07636

  Soldering or alloying · CPC title

• H10W72/07611

  Treating the bonding area before connecting, e.g. by applying flux or cleaning · CPC title