Semiconductor device and method for forming a semiconductor device

Patent metadata

Field	Value
Publication number	US-10892168-B2
Application number	US-201816222592-A
Country	US
Kind code	B2
Filing date	Dec 17, 2018
Priority date	Dec 18, 2017
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.

First claim

What is claimed is:

1. A method for forming a semiconductor device, the method comprising:
incorporating recombination center atoms into a semiconductor substrate;
after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate; and
before incorporating the recombination center atoms into the semiconductor substrate, incorporating dopants of a first type into the semiconductor substrate to form a very highly doped portion of the doping region at the surface of the semiconductor substrate,
wherein a maximal doping concentration of the very highly doped portion of the doping region is at least 1*10 18 dopants per cm 3 .

2. The method of claim 1 , wherein incorporating the recombination center atoms comprises:
implanting the recombination center atoms into the semiconductor substrate; and
annealing the semiconductor substrate to diffuse the recombination center atoms in the semiconductor substrate, before the noble gas atoms are implanted into the doping region.

3. The method of claim 1 , wherein the recombination center atoms comprise one or more types of atoms selected from the group of atoms consisting of: platinum atoms; gold atoms; and palladium atoms.

4. The method of claim 1 , wherein incorporating the recombination center atoms comprises implanting the recombination center atoms at a dose of less than 1e14 atoms per cm 2 .

5. The method of claim 1 , wherein the noble gas atoms comprise one or more types of atoms selected from the following group of atoms consisting of: argon atoms; helium atoms; neon atoms; xenon atoms; and krypton atoms.

6. The method of claim 1 , wherein the noble gas atoms are implanted at a dose of less than 2e14 atoms per cm 2 .

7. The method of claim 1 , wherein the noble gas atoms are implanted at an implantation energy of less than 500 keV.

8. The method of claim 1 , wherein the noble gas atoms are implanted so that a maximum concentration of crystal defects created by the implanting of the noble gas atoms is arranged within the very highly doped portion of the doping region.

9. The method of claim 1 , wherein the noble gas atoms are implanted at a front surface of the semiconductor substrate, and wherein incorporating the recombination center atoms into the semiconductor substrate comprises implanting the recombination center atoms from a back surface of the semiconductor substrate.

10. The method of claim 1 , further comprising:
after implanting the noble gas atoms into the doping region, thinning the semiconductor substrate from a back surface of the semiconductor substrate.

11. The method of claim 1 , further comprising:
incorporating dopants of a second type into the semiconductor substrate to form a field stop region of the diode structure and/or the transistor structure.

12. A semiconductor device, comprising:
a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of a semiconductor substrate,
wherein a maximal doping concentration of the doping region is at least 1*10 18 dopants per cm 3 ,
wherein a maximal doping concentration of recombination center atoms in the semiconductor substrate is at least 1*10 16 recombination center atoms per cm 3 ,
wherein the maximal doping concentration of the recombination center atoms is located within a very highly doped region of the doping region.

13. The semiconductor device of claim 12 , wherein the very highly doped portion of the doping region is arranged at the surface of the semiconductor substrate.

14. The semiconductor device of claim 13 , wherein a maximal doping concentration of the very highly doped region is at least a factor of 10 higher than a maximal doping concentration of the doping region outside the very highly doped region.

15. The semiconductor device of claim 13 , wherein an average doping concentration of the recombination center atoms in the very highly doped portion of the doping region is least 1*10 17 recombination center atoms per cm 3 .

16. The semiconductor device of claim 12 , wherein an average doping concentration of the recombination center atoms is less than 1*10 15 recombination center atoms per cm 3 .

17. The semiconductor device of claim 12 , wherein the doping region comprises an anode or cathode doping region of a diode structure, or a collector or emitter doping region of a transistor structure.

18. The semiconductor device of claim 12 , further comprising:
a power transistor structure connected to an inductive load,
wherein the doping region comprises an anode or cathode doping region of a diode structure,
wherein the diode structure is configured to conduct a current from the power transistor structure if the power transistor structure is switched from a conducting state to a non-conducting state.

19. The semiconductor device of claim 12 , wherein the recombination center atoms comprise one or more types of atoms selected from the group of atoms consisting of:
platinum atoms; gold atoms; and palladium atoms.

20. The semiconductor device of claim 12 , wherein a blocking voltage of the semiconductor device is at least 10 V.

21. A semiconductor device, comprising:
a doping region of a diode structure, the doping region being arranged at a surface of a semiconductor substrate; and
a power transistor structure connected to an inductive load,
wherein a maximal doping concentration of the doping region is at least 1*10 18 dopants per cm 3 ,
wherein a maximal doping concentration of recombination center atoms in the semiconductor substrate is at least 1*10 16 recombination center atoms per cm 3 ,
wherein the doping region comprises an anode or cathode doping region of the diode structure,
wherein the diode structure is configured to conduct a current from the power transistor structure if the power transistor structure is switched from a conducting state to a non-conducting state.

Assignees

• Infineon Technologies Ag

Inventors

• Schmidt Gerhard
• Barusic Mario
• Stoib Benedikt

Classifications

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H10P95/405 Primary

  using cavities formed by hydrogen or noble gas ion implantation · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204 Primary

  into Group IV semiconductors · CPC title