Bandgap current architecture optimized for size and accuracy

Patent metadata

Field	Value
Publication number	US-10890935-B2
Application number	US-201916282847-A
Country	US
Kind code	B2
Filing date	Feb 22, 2019
Priority date	Jan 21, 2019
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

A low voltage bandgap reference circuit ( 200 ) is provided which includes a first current generator ( 202 ) having first and second circuit branches which include, respectively, first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor that varies proportionally as a function of temperature; a second current generator ( 204, 205 ) having a third circuit branch which includes one or more field effect transistors and no bipolar transistors for generating a second current that varies inversely as a function of temperature; and a third circuit ( 206 ) connected to generate a bandgap reference current in response to the first current and the second current.

First claim

What is claimed is:

1. A low voltage bandgap reference circuit comprising:
a first current generator comprising first and second circuit branches respectively comprising first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor in response to a reference voltage, wherein said first current varies proportionally as a function of temperature;
a second current generator comprising a third circuit branch comprising one or more field effect transistors and no bipolar transistors for generating a second current to counteract for the variation of said first current, wherein said second current varies inversely as a function of temperature; and
a third circuit configured to generate a bandgap reference current in response to the first current and the second current, wherein the third circuit comprises a resistor connected between a ground reference and a common node directly connected to the first, second, and third circuit branches.

2. The low voltage bandgap reference circuit of claim 1 , wherein said first current is a proportional to absolute temperature (PTAT) current.

3. The low voltage bandgap reference circuit of claim 1 , wherein said second current is a complementary to absolute temperature (CTAT) current.

4. The low voltage bandgap reference circuit of claim 1 , wherein the first bipolar transistor comprises one bipolar transistor having a first sizing reference, and where the second bipolar transistor comprises eight bipolar transistors connected in parallel, each of eight bipolar transistors having the first sizing reference.

5. A method for generating a bandgap reference current, comprising:
generating a first current that varies proportionally as a function of temperature in response to a supply reference voltage with a first current generator comprising first and second circuit branches respectively comprising first and second bipolar transistors having different sizing reference values;
generating a second current that varies inversely as a function of temperature with a second current generator comprising a third circuit branch comprising one or more field effect transistors and no bipolar transistors; and
generating the bandgap reference current by supplying the first and second currents to a shared resistor connected between a ground reference voltage and a common node directly connected to the first, second, and third circuit branches.

6. The method of claim 5 , further comprising generating a bandgap reference voltage by supplying the bandgap reference current to the shared resistor connected between the ground reference voltage and the common node directly connected to the first, second, and third circuit branches.

7. The method of claim 6 , wherein the bandgap reference voltage is 1V or less.

8. A bandgap circuit, comprising:
a first current generator for generating a first current, comprising:
a first circuit branch comprising a first MOS transistor, a second MOS transistor, and a first bipolar transistor having a first reference size coupled in series with each other between a first reference supply node and a first shared node; and
a second circuit branch comprising a third MOS transistor, a fourth MOS transistor, a second bipolar transistor having a second reference size, and a first resistor coupled in series with each other between the first reference supply node and the first shared node, thereby generating the first current at the first resistor that varies proportionally as a function of temperature;

a second current generator for generating a second current, comprising a third circuit branch comprising a fifth MOS transistor and a second resistor coupled in series with each other and without a bipolar transistor between the first reference supply node and the first shared node, thereby generating the second current at the second resistor that varies inversely as a function of temperature; and
a third circuit connected to receive the first current and the second current and to generate a bandgap reference current in response to the first current and the second current, wherein the third circuit comprises a shared resistor connecting between a ground reference and a common node directly connected to the first, second, and third circuit branches.

9. The bandgap circuit of claim 8 , wherein the first bipolar transistor comprises one bipolar transistor having a first sizing reference, and where the second bipolar transistor comprises eight bipolar transistors connected in parallel, each of eight bipolar transistors having the first sizing reference.

10. The bandgap circuit of claim 8 , wherein the shared resistor is coupled to receive the bandgap reference current and to generate therefrom a bandgap reference voltage that is substantially 1V or less.

Assignees

• Nxp Usa Inc

Inventors

• Mouret Guillaume
• Cargouet Yann
• Sicard Thierry

Classifications

• G05F1/462

  as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic · CPC title

• G05F3/30 Primary

  Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) · CPC title

• G05F3/267 Primary

  using both bipolar and field-effect technology · CPC title

• G05F1/46

  wherein the variable actually regulated by the final control device is DC (G05F1/625 takes precedence) · CPC title