Pressure sensor

Patent metadata

Field	Value
Publication number	US-10890500-B2
Application number	US-201616069714-A
Country	US
Kind code	B2
Filing date	Dec 16, 2016
Priority date	Jan 14, 2016
Publication date	Jan 12, 2021
Grant date	Jan 12, 2021

Abstract

A pressure sensor (100) includes a diaphragm (3); a semiconductor chip (1) that includes a plurality of resistors (R1 to R4) constituting a strain gauge and that has a square shape in plan view; four first structures (2a to 2d) each having one end joined to a region of the second main surface of the diaphragm that is deformed when a pressure is applied to a first main surface (1A) of the diaphragm and having other ends respectively connected to four corners of the semiconductor chip, the first structures extend downward to a second main surface (3B); and a second structure (2e) having one end joined to a center (30) of the diaphragm on the second main surface in plan view and having the other end joined to a center (10) of the semiconductor chip in plan view, the second structure extending downward to the second main surface.

First claim

The invention claimed is:

1. A pressure sensor comprising:
a diaphragm that has a first main surface that receives a pressure of a measurement object fluid and a second main surface opposite to the first main surface;
a semiconductor chip that has one surface on which a plurality of resistors that constitute a strain gauge are formed, the semiconductor chip having a square shape in plan view;
four first structures that each have one end joined in a region of the second main surface in which the diaphragm is deformed when a pressure larger than a pressure applied to the second main surface is applied to the first main surface and that have other ends respectively connected to four corners of an other surface of the semiconductor chip, the four first structures extending downward to the second main surface; and
a second structure that has one end joined to a center of the diaphragm on the second main surface in plan view and that has an other end joined to a center of the other surface of the semiconductor chip in plan view, the second structure extending downward to the second main surface,
wherein the plurality of resistors are formed on a periphery of a circle that shares a center with the semiconductor chip in plan view, and
wherein the plurality of resistors are formed on straight lines that connect the center of the semiconductor chip and middle points of respective sides of the semiconductor chip to each other in plan view.

2. The pressure sensor according to claim 1 ,
wherein the semiconductor chip has a recessed portion that is formed in the other surface, and
wherein the plurality of resistors are formed, on the one surface of the semiconductor chip, in a region corresponding to an inside of the recessed portion.

3. The pressure sensor according to claim 2 ,
wherein the recessed portion has a circular shape in plan view.

4. The pressure sensor according to claim 2 ,
wherein the recessed portion has a rectangular shape in plan view.

5. The pressure sensor of claim 2 , wherein the other end of the second structure is joined to a center of the recessed portion.

Assignees

• Azbil Corp

Inventors

• Seto Yuki
• Ogasawara Rina

Classifications

• G01L19/147 Primary

  Details about the mounting of the sensor to support or covering means · CPC title

• G01L9/006

  of metallic strain gauges fixed to an element other than the pressure transmitting diaphragm · CPC title

• G01L9/0055 Primary

  bonded on a diaphragm · CPC title

• G01L13/025

  using diaphragms · CPC title

• G01L9/0042

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title