Wavelength converted semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-10886440-B2
Application number	US-202016891613-A
Country	US
Kind code	B2
Filing date	Jun 3, 2020
Priority date	Jan 8, 2014
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The wavelength converting layer includes a mixture of a wavelength converting material, a transparent material, and an adhesive material, wherein the adhesive material is no more than 15% of the weight of the wavelength converting layer.

First claim

The invention claimed is:

1. A structure comprising:
a light emitting device comprising a first surface, an oppositely positioned second surface, and sides surfaces connecting the first surface and the second surface;
a transient voltage suppression chip comprising a first surface, an oppositely positioned second surface, and sides surfaces connecting the first surface and the second surface, the second surface of the transient voltage suppression chip aligned with and parallel to the second surface of the light emitting device;
a wavelength converting layer disposed on the first surface and the side surfaces of the light emitting device, on the first surface and side surfaces of the transient voltage suppression chip, and between the light emitting device and the transient voltage suppression chip, the wavelength converting layer mechanically connecting the light emitting device to the transient voltage suppression chip, the wavelength converting layer comprising a surface aligned with the second surface of the light emitting device and the second surface of the transient voltage suppression chip;
a reflective layer disposed on the surface of the wavelength converting layer aligned with the second surface of the light emitting device and the second surface of the transient voltage suppression chip;
a dielectric layer disposed on a surface of the reflective layer opposite from the wavelength converting layer; and
an electrically conductive connection between the light emitting device and the transient voltage suppression chip.

2. The structure of claim 1 , wherein the light emitting device is configured to emit light having a first peak wavelength and the wavelength converting layer comprises a mixture of: a wavelength converting material to absorb light emitted by the light emitting device and emit light having a second peak wavelength, an adhesive material, and a plurality of transparent particles having a higher thermal conductivity than the adhesive.

3. The structure of claim 1 , wherein the wavelength converting layer is molded on the light emitting device and the transient voltage suppression chip.

4. The structure of claim 2 , wherein the wavelength converting material comprises no more than 40% of the weight of the wavelength converting layer.

5. The structure of claim 2 , wherein the adhesive is one of silicone, epoxy, sol gel material, and glass.

6. The structure of claim 2 , wherein the transparent particles and the adhesive material are comprised of different materials.

7. The structure of claim 2 , wherein the adhesive material comprises a silicate network.

8. The structure of claim 1 , wherein a thermal conductivity of the wavelength converting layer is at least 1 W/mK.

9. The structure of claim 2 , wherein indices of refraction of the transparent particles and the adhesive material differ less than 10%.

10. The structure of claim 2 , wherein the adhesive material comprises no more than 20% of the weight of the wavelength converting layer.

11. The structure of claim 1 , wherein the dielectric layer comprises openings providing access to the light emitting device and to the transient voltage suppression chip, and further comprising an electrically conductive pad disposed on the dielectric layer, the pad providing the electrically conductive connection between the light emitting device and the transient voltage suppression chip.

12. The structure of claim 1 , wherein the reflective layer is conductive and is patterned to provide the electrically conductive connection between the light emitting device and the transient voltage suppression chip.

13. A structure comprising:
a light emitting device comprising a first surface, an oppositely positioned second surface, and sides surfaces connecting the first surface and the second surface;
a transient voltage suppression chip comprising a first surface, an oppositely positioned second surface, and sides surfaces connecting the first surface and the second surface, the second surface of the transient voltage suppression chip aligned with and parallel to the second surface of the light emitting device;
a wavelength converting layer disposed on the first surface and the side surfaces of the light emitting device, on the first surface and side surfaces of the transient voltage suppression chip, and between the light emitting device and the transient voltage suppression chip, the wavelength converting layer mechanically connecting the light emitting device to the transient voltage suppression chip, the wavelength converting layer comprising a surface aligned with the second surface of the light emitting device and the second surface of the transient voltage suppression chip;
a reflective layer disposed on the surface of the wavelength converting layer aligned with the second surface of the light emitting device and the second surface of the transient voltage suppression chip;
a dielectric layer disposed on a surface of the reflective layer opposite from the wavelength converting layer, the dielectric layer comprising openings to provide access to the light emitting device and to the transient voltage suppression chip; and
an electrically conductive pad disposed on the dielectric layer, the pad providing the electrically conductive connection between the light emitting device and the transient voltage suppression chip.

14. The structure of claim 13 , wherein the light emitting device is configured to emit light having a first peak wavelength and the wavelength converting layer comprises a mixture of: a wavelength converting material to absorb light emitted by the light emitting device and emit light having a second peak wavelength, an adhesive material, and a plurality of transparent particles having a higher thermal conductivity than the adhesive.

15. The structure of claim 14 , wherein the wavelength converting material comprises no more than 40% of the weight of the wavelength converting layer.

16. The structure of claim 14 , wherein the adhesive material comprises no more than 20% of the weight of the wavelength converting layer.

17. The structure of claim 13 , wherein a thermal conductivity of the wavelength converting layer is at least 1 W/mK.

18. A structure comprising:
a light emitting device comprising a first surface, an oppositely positioned second surface, and sides surfaces connecting the first surface and the second surface;
a transient voltage suppression chip comprising a first surface, an oppositely positioned second surface, and sides surfaces connecting the first surface and the second surface, the second surface of the transient voltage suppression chip aligned with and parallel to the second surface of the light emitting device;
a wavelength converting layer disposed on the first surface and the side surfaces of the light emitting device, on the first surface and side surfaces of the transient voltage suppression chip, and between the light emitting device and the transient voltage suppression chip, the wavelength converting layer mechanically connecting the light emitting device to the transient voltage suppression chip, the wavelength converting layer comprising a surface aligned with the second surface of the light emitting device and the second surface of the transient voltage suppression chip;
a reflective layer disposed on the surface of the wavelength converting layer aligned with the second surface of the light emitting device and the second surface of the transient voltage suppression chip, the reflective layer is conductive and is patterned to provide the electrically conduc

Assignees

• Lumileds Llc

Inventors

• Moran Brendan Jude
• Shchekin Oleg Borisovich
• Basin Grigoriy
• Kmetec Jeffrey Dellert

Classifications

• H10W90/10

  Configurations of laterally-adjacent chips · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W72/0198

  batch processes · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title