Method for directly synthesizing graphene on surface of target object and device including graphene prepared using the method

Patent metadata

Field	Value
Publication number	US-10883176-B2
Application number	US-201816198877-A
Country	US
Kind code	B2
Filing date	Nov 23, 2018
Priority date	May 9, 2018
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A method for directly synthesizing graphene on a surface of a target object includes: forming a non-metal layer on a support substrate; disposing the target object in a space above the support substrate, which is opposite to the non-metal layer; and injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film, wherein the graphene is nucleated and grown by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with catalytic assistance from the non-metal layer, and a carbon atom from the decomposition of the precursor is anchored on the surface to form the graphene film.

First claim

What is claimed is:

1. A method for directly synthesizing graphene on a surface of a target object, comprising:
forming a non-metal layer on a support substrate;
disposing the target object in a space above the support substrate; and
injecting a carbon precursor to form graphene on the surface of the target object to synthesize a graphene film,
wherein the graphene is nucleated and grown on the surface of the target object by a decomposition of the carbon precursor, the carbon precursor is decomposed by heat with catalytic assistance from the non-metal layer to diffuse a carbon atom into the space above the support substrate, and the carbon atom from the decomposition of the precursor is anchored on the surface of the target object to form the graphene film,
wherein the target object is located within the space above the support substrate comprising the diffused carbon atom.

2. The method according to claim 1 ,
wherein the carbon atom is supplied to surface of the target object by means of dissociative adsorption to nucleate and grow the graphene, an energy of metastable atom of the non-metallic catalytic layer is supplied to the carbon precursor for the decomposition of the carbon precursor to generate the carbon atom.

3. The method according to claim 1 ,
wherein at least a part of the surface of the target object has a three-dimensional shape.

4. The method according to claim 1 ,
wherein the disposing the target object includes that the non-metal layer and the target object are at least partially not in contact with each other.

5. The method according to claim 4 ,
wherein a non-contact interval between the target object and the non-metal layer is 1 nm to 2000 um.

6. The method according to claim 1 ,
wherein the support substrate has a groove having a V-shaped form or has a constant interval between the support substrate and the target object.

7. The method according to claim 1 , further comprising:
installing a screen to block at least a part of an ambient space of the target object.

8. The method according to claim 1 ,
wherein the non-metal layer is made of gamma (γ) alumina.

9. The method according to claim 1 ,
wherein the forming a non-metal layer includes forming an amorphous non-metal layer by using atomic layer deposition (ALD).

10. The method according to claim 9 ,
wherein the forming a non-metal layer further includes crystallizing the amorphous non-metal layer.

11. The method according to claim 10 ,
wherein the precursor for forming the non-metal layer includes any one aluminum precursor selected from the group consisting of trimethyl aluminum ((CH 3 ) 3 Al, TMA), aluminum isopropoxide ([Al(OC 3 H 7 ) 3 ], IPA), methyl pyrrolidine-tri-methyl aluminum (MPTMA), ethyl-pyridine-triethyl-aluminum (EPPTEA), ethyl-pyridine-dimethyl-aluminum hydride (EPPDMAH), trimethyl aluminum (AlCH 3 ), and combinations thereof.

12. The method according to claim 1 , further comprising:
synthesizing another graphene on a surface of another target object by reusing the non-metal layer formed on the support substrate.

13. The method according to claim 1 ,
wherein the carbon precursor includes any one selected from the group consisting of methane, ethane, propane, acetylene, methanol, ethanol, propanol, and combinations thereof.

14. The method according to claim 1 ,
wherein the reaction gas includes any one selected from the group consisting of nitrogen, helium, neon, argon, hydrogen, and combinations thereof.

15. The method according to claim 1 ,
wherein the target object is an optical fiber, and a surface of the optical fiber is at least partially removed.

16. The method according to claim 4 ,
wherein when the graphene is synthesized, conductivity or semi-conductivity is determined according to a distance between the non-metal layer and the target object surface, and
wherein a conductive graphene is synthesized when the non-metal layer is formed in contact with the surface of the target object, and a semi-conductive graphene is synthesized when the non-metal layer is formed not in contact with the surface of the target object.

17. The method according to claim 1 , wherein the target object is opposite to the non-metal layer.

Assignees

• Korea Inst Sci & Tech

Inventors

• Song Yong-Won
• Uddin Md Siam
• Park Jaehyun

Classifications

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/2925

  Surface structures · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/3242

  Structure · CPC title