Image sensors with phase detection auto-focus pixels

US10880467B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10880467-B2
Application numberUS-201816017566-A
CountryUS
Kind codeB2
Filing dateJun 25, 2018
Priority dateJun 25, 2018
Publication dateDec 29, 2020
Grant dateDec 29, 2020

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  1. Title

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  5. First independent claim

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Abstract

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An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array to receive incident light.

First claim

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What is claimed is: 1. An image sensor pixel array, comprising: a plurality of image pixel units to gather image information; and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information, wherein: each of the PDAF pixel units is substantially surrounded by the image pixel units; each of the PDAF pixel units includes two first image sensor pixels adjacent to each other, wherein: each of the first image sensor pixels includes a first photodiode disposed in a semiconductor substrate; and a shared first micro-lens covers both of the first image sensor pixels; each of the image pixel units includes four second image sensor pixels adjacent to each other, wherein: each of the second image sensor pixels includes a second photodiode disposed in the semiconductor substrate and is covered by an individual second micro-lens wherein the first micro-lens is bigger and taller than the second micro-lens; and a coating layer disposed on both the first micro-lenses and the second micro-lenses, wherein the coating layer forms a flattened surface across the whole image sensor pixel array to receive incident light; wherein a refractive index of the coating layer is lower than a refractive index of the first micro-lenses and a refractive index of the second micro-lenses. 2. The image sensor pixel array of claim 1 , further comprising: a second interlayer dielectric layer covering both the first image sensor pixels and the second image sensor pixels; and a third interlayer dielectric layer covering the second image sensor pixels only, wherein: the third interlayer dielectric layer is disposed directly on the second interlayer dielectric layer; the first micro-lens is disposed directly on the second interlayer dielectric layer; the second micro-lens is disposed directly on the third interlayer dielectric layer; and a top surface of the second micro-lens is at the same level as a top surface of the first micro-lens. 3. The image sensor pixel array of claim 2 , wherein a refractive index of the second interlayer dielectric layer is not lower than a refractive index of the first micro-lens and a refractive index of the second micro-lens. 4. The image sensor pixel array of claim 3 , wherein a refractive index of the third interlayer dielectric layer is not higher than the refractive index of the second interlayer dielectric layer and is also not lower than the refractive index of the second micro-lens and the refractive index of the first micro-lens. 5. The image sensor pixel array of claim 3 , wherein a refractive index of the coating layer is lower than the refractive index of the first micro-lens and the refractive index of the second micro-lens. 6. The image sensor pixel array of claim 1 , wherein the four the second image sensor pixels in each of the image pixel units are arranged to form a 2×2 pattern that is repeated across the whole image sensor pixel array. 7. The image sensor pixel array of claim 1 , wherein the two the first image sensor pixels in each of the PDAF pixel units are arranged to form a 2×1 pattern distributed across the whole image sensor pixel array to collect phase information with various angular responses. 8. The image sensor pixel array of claim 1 , wherein the first photodiode in the first image sensor pixel is the same as the second photodiode in the second image sensor pixel. 9. An image sensor pixel array, comprising: a plurality of image pixel units to gather image information; and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information, wherein: each of the PDAF pixel units is substantially surrounded by the image pixel units; each of the PDAF pixel units includes two of first image sensor pixels adjacent to each other, wherein: each of the first image sensor pixels includes a first photodiode disposed in a semiconductor substrate and is covered by an individual fourth micro-lens; and a shared third micro-lens covers both of the fourth micro-lenses; each of the image pixel units includes four second image sensor pixels adjacent to each other, wherein: each of the second image sensor pixels includes a second photodiode disposed in the semiconductor substrate and is covered by an individual second micro-lens; and a coating layer disposed on both the fourth micro-lenses and the second micro-lenses and between the third micro-lenses and the fourth micro-lenses, wherein the coating layer forms a flattened surface across the whole image sensor pixel array to receive incident light. 10. The image sensor pixel array of claim 9 , further comprising an interlayer dielectric layer covering both the first image sensor pixels and the second image sensor pixels wherein the fourth micro-lenses and the second micro-lenses are disposed directly on the interlayer dielectric layer. 11. The image sensor pixel array of claim 10 , wherein a refractive index of the interlayer dielectric layer is not lower than a refractive index of the fourth micro-lens and a refractive index of the second micro-lens. 12. The image sensor pixel array of claim 9 , wherein a refractive index of the coating layer is lower than a refractive index of the fourth micro-lens and a refractive index of the second micro-lens. 13. The image sensor pixel array of claim 9 , wherein the four the second image sensor pixels in each of the image pixel units are arranged to form a 2×2 pattern that is repeated across the whole image sensor pixel array. 14. The image sensor pixel array of claim 9 , wherein the two the first image sensor pixels in each of the PDAF pixel units are arranged to form a 2×1 pattern distributed across the whole image sensor pixel array to collect phase information with various angular responses. 15. The image sensor pixel array of claim 9 , wherein the first photodiode in the first image sensor pixel is the same as the second photodiode in the second image sensor pixel. 16. The image sensor pixel array of claim 9 , wherein the fourth micro-lens in the first image sensor pixel is the same as the second micro-lens in the second image sensor pixel. 17. The image sensor pixel array of claim 12 , wherein a refractive index of the third microlens is lower than the refractive index of the coating layer.

Assignees

Inventors

Classifications

  • based on the phase difference signals · CPC title

  • H04N23/67Primary

    Focus control based on electronic image sensor signals · CPC title

  • Pixels specially adapted for focusing, e.g. phase difference pixel sets · CPC title

  • Colour filters · CPC title

  • Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

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What does patent US10880467B2 cover?
An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, whe…
Who is the assignee on this patent?
Omnivision Tech Inc
What technology area does this patent fall under?
Primary CPC classification H04N23/67. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 29 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).