Systems and methods for organic semiconductor devices with sputtered contact layers

US10879479B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10879479-B2
Application numberUS-201716081390-A
CountryUS
Kind codeB2
Filing dateMar 3, 2017
Priority dateMar 4, 2016
Publication dateDec 29, 2020
Grant dateDec 29, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer (140) comprising a first sputter-deposited transparent conducting oxide; an electron transport layer (130) interfacing with the first contact layer; a second contact layer (110) comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer (120) having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

First claim

Opening claim text (preview).

What is claimed is: 1. An organic semiconductor device, the device comprising: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; and a plurality of scribes that extend into the electron transport layer, the hole transport layer, and the organic semiconductor active layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer; wherein either the first sputter-deposited transparent conducting oxide or the second sputter-deposited transparent conducting oxide extends into the plurality of scribes and is configured to electrically connect the first contact layer on a first side of each of the plurality of scribes to the second contact layer on a second side of each of the plurality of scribes. 2. The device of claim 1 , wherein the buffering transport layer comprises a transparent polymer material, a semi-transparent polymer material, a transparent oxide material or semi-transparent oxide material. 3. The device of claim 1 , wherein the organic semiconductor active layer comprises either an organic bulk heterojunction structure or a bilayer structure. 4. The device of claim 1 , wherein the organic semiconductor active layer comprises an organic bulk heterojunction absorber layer. 5. The device of claim 1 , wherein the organic semiconductor active layer comprises an organic emissive electroluminescent layer. 6. The device of claim 1 , wherein the first sputter-deposited transparent conducting oxide and the second sputter-deposited transparent conducting oxide both comprise sputter-deposited indium zinc oxide (IZO). 7. The device of claim 1 , wherein at least one of the first sputter-deposited transparent conducting oxide or the second sputter-deposited transparent conducting oxide comprise at least one of: sputtered indium zinc oxide (IZO); sputtered indium tin oxide (ITO); sputtered aluminum doped zinc oxide (AZO); or sputtered gallium doped zinc oxide (GZO). 8. The device of claim 1 , further comprising a substrate layer adjacent to either the first contact layer or the second contact layer. 9. An organic semiconductor device, the device comprising: a substrate; one or more backside device layers adjacent to the substrate; an organic semiconductor active layer having an interface with the one or more backside device layers; a buffering transport layer applied over the organic semiconductor active layer; a plurality of scribes that extend into the buffering transport layer, the organic semiconductor active layer and the one or more backside device layers; and a sputter-deposited transparent material contact layer applied over the buffering transport layer and into the plurality of scribes, wherein the sputter-deposited transparent material contact layer defines a front contact layer on a first side of each of the plurality of scribes and is configured to electrically connect the front contact layer to a back contact layer within the one or more backside device layers on a second side of each of the plurality of scribes. 10. The device of claim 9 , wherein the sputtered transparent material contact layer comprises a sputter-deposited transparent conducting oxide. 11. The device of claim 10 , wherein the sputter-deposited transparent conducting oxide comprises a sputtered indium zinc oxide (IZO). 12. The device of claim 9 , wherein the buffering transport layer comprises at least one of, a transparent polymer material, a semi-transparent polymer material, a transparent oxide material or semi-transparent oxide material. 13. The device of claim 9 , wherein the organic semiconductor active layer comprises either an organic bulk heterojunction structure or a bilayer structure. 14. A device comprising in order: a front contact layer comprising a sputter-deposited transparent conducting oxide; a buffering transport layer; an organic semiconductor active layer; and a plurality of scribes that extend into the buffering transport layer and the organic semiconductor active layer; wherein the sputter-deposited transparent conducting oxide is applied over the buffering transport layer and into the plurality of scribes, wherein the sputter-deposited transparent conducting oxide is configured to electrically connect the front contact layer on a first side of each of the plurality of scribes to a back contact layer on a second side of each of the plurality of scribes.

Assignees

Inventors

Classifications

  • Electrical configurations of PV cells, e.g. series connections or parallel connections · CPC title

  • Transparent electrodes, e.g. indium tin oxide [ITO] electrodes · CPC title

  • H10K71/60Primary

    Forming conductive regions or layers, e.g. electrodes · CPC title

  • Organic PV cells · CPC title

  • Electricity · mapped topic

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What does patent US10879479B2 cover?
Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer (140) comprising a first sputter-deposited transparent conducting oxide; an electron transport layer (130) interfacing with the first contact layer; a second contact layer (110) comprising a second sputter-deposited…
Who is the assignee on this patent?
Solarwindow Tech Inc, Alliance Sustainable Energy
What technology area does this patent fall under?
Primary CPC classification H10K71/60. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 29 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).