Repeating alternating multilayer buffer layer

Patent metadata

Field	Value
Publication number	US-10879447-B2
Application number	US-201916352542-A
Country	US
Kind code	B2
Filing date	Mar 13, 2019
Priority date	Mar 13, 2019
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.

First claim

What is claimed is:

1. A buffer layer comprising:
a stack of at least four layers of a face-centered cubic (FCC) crystal structure material, the at least four FCC material layers alternating with
at least three layers of a body-centered cubic (BCC) crystal structure material,
wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick.

2. The buffer layer of claim 1 , wherein the FCC crystal structure material is copper and the BCC crystal structure material is niobium.

3. The buffer layer of claim 1 , wherein the stack has six layers of the FCC crystal structure material alternating with layers of the BCC crystal structure material.

4. The buffer layer of claim 3 , wherein the FCC crystal structure material is copper and the BCC crystal structure material is niobium.

5. A magnetic Josephson junction (MJJ) comprising the buffer layer of claim 1 , the buffer layer being located directly on top of a lower superconducting electrode contact layer of the MJJ and below a magnetic layer of the MJJ, wherein the lower superconducting electrode contact layer is niobium and is at least five hundred angstroms thick.

6. A superconducting memory comprising a plurality of memory cells each comprising an instance of the MJJ of claim 5 .

7. A room-temperature magnetoresistive random-access memory (MRAM) comprising the buffer layer of claim 1 .

8. A hard disk drive reader comprising the buffer layer of claim 1 .

9. The buffer layer of claim 1 , wherein the buffer layer has root-mean-square upper surface roughness of less than about twenty angstroms.

10. The buffer layer of claim 1 , wherein the buffer layer has root-mean-square upper surface roughness of less than about fifteen angstroms.

11. A device comprising a switching magnetic layer fabricated over the buffer layer of claim 1 , wherein the magnetic layer has an easy axis and a hard axis each characterized by a respective hysteresis loop, the easy axis hysteresis loop having a squareness of greater than about 0.9, and the hard axis hysteresis loop having a squareness of less than about 0.1.

12. A device comprising a switching magnetic layer fabricated over the buffer layer of claim 1 , the magnetic layer having an easy axis and a hard axis, the hard axis having a coercivity of less than about 0.2 oersteds.

13. A superconducting device comprising:
a lower substrate layer of silicon;
above the substrate layer, a galvanic contact layer of niobium between about twelve hundred angstroms and about two thousand angstroms thick; and
on top of the galvanic contact layer, a buffer layer comprising alternating layers of copper and niobium, the number of alternating copper layers in the buffer layer being N, the number of alternating niobium layers being either N−1 or N, where N is four or greater.

14. The device of claim 13 , wherein the alternating layers of copper and niobium in the buffer layer are each between about five angstroms and about ten angstroms thick.

15. The device of claim 13 , wherein N is six.

16. The device of claim 13 , wherein the device is a magnetic Josephson junction (MJJ).

17. The device of claim 13 , further comprising, on top of the buffer layer, a magnetic layer.

18. The device of claim 13 , wherein the buffer layer has root-mean-square upper surface roughness of less than about twenty angstroms.

19. The device of claim 13 , wherein the buffer layer has root-mean-square upper surface roughness of less than about fifteen angstroms.

20. The device of claim 17 , wherein the magnetic layer is a free magnetic layer having an easy axis and a hard axis each characterized by a respective hysteresis loop, the easy axis hysteresis loop having a squareness of greater than about 0.9, the hard axis hysteresis loop having a squareness of less than about 0.1, and the hard axis having a coercivity of less than about 0.2 oersteds.

Assignees

• Ambrose Thomas F
• Loving Melissa G
• Northrop Grumman Systems Corp

Inventors

• Ambrose Thomas F
• Loving Melissa G

Classifications

• H10N50/85

  Materials of the active region · CPC title

• G11C11/44

  using super-conductive elements, e.g. cryotron · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01F41/32

  for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title