Solar cell

Patent metadata

Field	Value
Publication number	US-10879405-B2
Application number	US-201916252162-A
Country	US
Kind code	B2
Filing date	Jan 18, 2019
Priority date	Jul 27, 2015
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

A solar cell includes a conductive area including first and second conductive areas on one surface of a semiconductor substrate, a passivation film having opening and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, the electrode including an adhesive layer on the semiconductor substrate or the conductive area, an electrode layer on the adhesive layer and including a metal, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer, the electrode layer having a thickness greater than a thickness of each of the adhesive layer and the barrier layer, a width of the electrode layer being larger than a width of the opening, and the barrier layer having a higher melting point than a melting point of the electrode layer.

First claim

What is claimed is:

1. A solar cell comprising:
a semiconductor substrate;
a conductive area disposed on one surface of the semiconductor substrate;
a passivation blur having opening; and
an electrode connected to the conductive area,
wherein the electrode includes an adhesive layer directly disposed on the conductive area and including a first metal as a main component, an electrode layer directly disposed on the adhesive layer and including a second metal that is different from the first metal as a main component, a barrier layer directly disposed on the electrode layer and including a third metal that is different from the second metal as a main component, and a pad layer directly disposed on the barrier layer and including a fourth metal that is different from the third metal as a main component,
wherein the electrode layer has a thickness greater than a thickness of each of the adhesive layer and the harrier layer,
wherein the barrier layer has a thickness greater than a thickness of the adhesive layer, and
wherein each of the adhesive layer, the electrode layer, the barrier layer, and the pad layer is formed of a sputtered layer.

2. The solar cell according to claim 1 , wherein the barrier layer includes a refractory metal as the third metal.

3. The solar cell according to claim 1 , wherein the barrier layer includes titanium (Ti), molybdenum (Mo), chrome (Cr), or tungsten (W) as the third metal.

4. The solar cell according to claim 1 , wherein the barrier layer has a smaller coefficient of thermal expansion than a coefficient of thermal expansion of the electrode layer.

5. The solar cell according to claim 1 , wherein the adhesive layer and the barrier layer have a thickness ratio within a range from 1:2 to 1:30.

6. The solar cell according to claim 1 , wherein the barrier layer has a thickness of 80 nm or less.

7. The solar cell according to claim 1 , wherein the barrier layer has a specific resistance equal to or less than a specific resistance of the adhesive layer.

8. The solar cell according to claim 7 , wherein the specific resistance of the barrier layer is higher than a specific resistance of the electrode layer.

9. The solar cell according to claim 1 , wherein the barrier layer has a light-transmittance lower than a light-transmittance of the adhesive layer.

10. The solar cell according to claim 1 , wherein the adhesive layer includes a refractory metal as the first metal.

11. The solar cell according to claim 1 , wherein the adhesive layer includes titanium (Ti), molybdenum (Mo), chrome (Cr) or tungsten (W) as the first metal.

12. The solar cell according to claim 1 , wherein the adhesive layer has a coefficient of thermal expansion between a coefficient of thermal expansion of the semiconductor substrate or the conductive area and a coefficient of thermal expansion of a portion of the electrode layer that is adjacent to the adhesive layer.

13. The solar cell according to claim 1 , wherein the adhesive layer has a thickness of 50 nm or less.

14. The solar cell according to claim 1 , wherein the first metal of the adhesive layer and the third metal of the barrier layer, disposed on opposite surfaces of the electrode layer, are formed of the same material.

15. The solar cell according to claim 1 , wherein the electrode layer includes at least one of copper (Cu), aluminum (Al), silver (Ag), gold (Au) and alloys thereof as the second metal.

16. The solar cell according to claim 1 , wherein a ribbon is connected to the pad layer.

17. The solar cell according to claim 1 , wherein the pad layer includes at least one of tin and a nickel-vanadium alloy (NiV) as the fourth metal.

18. The solar cell according to claim 1 , wherein the conductive area includes first and second conductive areas disposed on the one surface of the semiconductor substrate,
wherein the electrode includes a first electrode connected to the first conductive area and a second electrode connected to the second conductive area,
wherein a width of the electrode layer is larger than a width of the opening, and
wherein the barrier layer has a higher melting point than a melting point of the electrode layer.

19. The solar cell according to claim 1 , wherein the adhesive layer is thinner than the passivation film.

Assignees

• Lg Electronics Inc

Inventors

• Nam Jeongbeom
• Shim Seunghwan
• Ko Jisoo

Classifications

• H10F10/146

  Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title

• H10F77/122

  comprising only Group IV materials · CPC title

• H10F77/311

  for photovoltaic cells · CPC title

• H10F77/219 Primary

  Arrangements for electrodes of back-contact photovoltaic cells · CPC title

• H10F77/935

  for photovoltaic devices or modules · CPC title