Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET

Patent metadata

Field	Value
Publication number	US-10879358-B2
Application number	US-202016825914-A
Country	US
Kind code	B2
Filing date	Mar 20, 2020
Priority date	Jan 31, 2018
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.

First claim

What is claimed is:

1. An electrically isolated diamond nanowire comprising:
a diamond substrate;
a diamond nanowire on the diamond substrate; and
a plurality of ions implanted at an oblique angle from a side of the diamond nanowire into the diamond substrate below an intersection of the diamond nanowire and the diamond substrate;
wherein during ion implantation a metal layer covers at least a top portion of the diamond nanowire so that the top portion is not implanted with the ions; and
wherein the ions implanted into the diamond substrate electrically isolate the diamond nanowire from the diamond substrate.

2. The electrically isolated diamond nanowire of claim 1 :
wherein the plurality of ions comprise N 2 .

3. The electrically isolated diamond nanowire of claim 1 :
wherein the plurality of ions are implanted at an oblique angle from a first side and a second side of the diamond nanowire.

4. The electrically isolated diamond nanowire of claim 1 :
wherein the metal layer comprises a tungsten layer, bismuth, molybdenum, or tin.

5. A field effect transistor comprising:
a diamond substrate;
a channel on the diamond substrate, wherein the channel is a diamond nanowire; and
a plurality of ions implanted in the diamond substrate below an intersection of the diamond nanowire and the diamond substrate;
wherein the plurality of ions are implanted at an oblique angle from a side of the diamond nanowire;
wherein during ion implantation a metal layer covers at least a top portion of the diamond nanowire so that the top portion is not implanted with the ions; and
wherein the ions implanted into the diamond substrate electrically isolate the diamond nanowire from the diamond substrate.

6. The field effect transistor of claim 5 wherein the plurality of ions comprise N 2 .

7. The field effect transistor of claim 5 further comprising:
a dielectric over the channel; and
a gate over the dielectric;
a drain for the field effect transistor on the diamond substrate and coupled to a first end of the channel; and
a source for the field effect transistor on the diamond substrate and coupled to a second end of the channel;
wherein the dielectric insulates the gate from the channel.

8. The field effect transistor of claim 5 ;
wherein the metal layer comprises a tungsten layer, bismuth, molybdenum, or tin.

Assignees

• Hrl Lab Llc

Inventors

• Huang Biqin
• Bai Xiwei

Classifications

• H10P30/2044

  into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon · CPC title

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10P30/22

  using masks · CPC title

• H10P14/3462

  Nanowires · CPC title

• H10P14/2903

  Carbon, e.g. diamond-like carbon · CPC title