Apparatus and method for fabricating a semiconductor device

Patent metadata

Field	Value
Publication number	US-10876208-B2
Application number	US-201816165379-A
Country	US
Kind code	B2
Filing date	Oct 19, 2018
Priority date	Jan 16, 2018
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

The present disclosure provides an apparatus for fabricating a semiconductor device, including a reaction chamber having a gas inlet for receiving a gas flow, a pedestal in the reaction chamber configured to support a substrate, and a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal, wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and a plurality of first holes arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow.

First claim

What is claimed is:

1. An apparatus for fabricating a semiconductor device, comprising:
a reaction chamber having a gas inlet for receiving a gas flow;
a pedestal in the reaction chamber configured to support a substrate;
a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal; and
a plurality of first holes configured on the first GDP, each of the first holes has a circular shape, each center of the first holes are arranged at intersections of a plurality of imaginary concentric circles and more than one Archimedean spirals, the plurality of the first holes comprises:
a first group of the first holes, each of the first group of the first holes has a center arranged along a first imaginary circle;
a second group of the first holes, each of the second group of the first holes has a center arranged along a second imaginary circle; and
a third group of the first holes, each of the third group of the first holes has a center arranged along a third imaginary circle, wherein:
the first imaginary circle, the second imaginary circle, and the third imaginary circle are concentric and equally distanced;
a first distance is between a center of the first GDP and a center of one of the first holes in the first group;
a second distance is between a center of the first GDP and a center of one of the first holes in the second group;
a third distance is between a center of the first GDP and a center of one of the first holes in the third group; and
a difference between the first distance and the second distance is identical to a difference between the second distance and the third distance.

2. The apparatus for fabricating the semiconductor device of claim 1 , wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and the plurality of the first holes are arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow, the plurality of concentric regions comprises:
a first concentric region;
a second concentric region surrounding and abutting the first concentric region; and
a third concentric region surrounding and abutting the second concentric region, wherein the first concentric region, the second concentric region and the third concentric region have the same width measured along the radial direction of the first GDP.

3. The apparatus for fabricating the semiconductor device of claim 2 , wherein the plurality of the first holes have substantially the same size, a density of the first holes in the second concentric region is greater than a density of the first holes in the first concentric region, and a density of the first holes in the third concentric region is greater than the density of the first holes in the second concentric region.

4. The apparatus for fabricating the semiconductor device of claim 2 , wherein a density of the first holes in the first concentric region substantially equals to a density of the first holes in the second concentric region and the first holes in the third concentric region, a size of the first holes in the second concentric region is greater than or equal to a size of the first holes in the first concentric region, and a size of the first holes in the third concentric region is greater than or equal to the size of the first holes in the second concentric region.

5. The apparatus for fabricating the semiconductor device of claim 1 , further comprising a second GDP between the gas inlet and the first GDP.

6. The apparatus for fabricating the semiconductor device of claim 5 , wherein the second GDP includes a plurality of second holes, wherein the plurality of the second holes are misaligned with the plurality of the first holes in a thickness direction of the first GDP.

7. The apparatus for fabricating the semiconductor device of claim 5 , wherein an open ratio of the second GDP is smaller than an open ratio of the first GDP.

8. The apparatus for fabricating the semiconductor device of claim 5 , wherein the first GDP is apart from the second GDP.

9. The apparatus for fabricating the semiconductor device of claim 1 , wherein a space between the first imaginary circle and the second imaginary circle is free from having an entire first hole therein.

10. The apparatus for fabricating the semiconductor device of claim 1 , wherein the gas inlet further comprises a pressure regulator.

11. A gas distribution plate (GDP), comprising:
a plate having a first concentric region, a second concentric region surrounding and abutting the first concentric region, and a third concentric region surrounding and abutting the second concentric region;
a plurality of first apertures through the plate, and each of the first apertures has a center arranged along a first imaginary circle in the first concentric region;
a plurality of second apertures through the plate, and each of the second apertures has a center arranged along a second imaginary circle in the second concentric region; and
a plurality of third apertures through the plate, and each of the third apertures has a center arranged along a third imaginary circle in the third concentric region,
wherein an open ratio of the plurality of second apertures to an area of the second concentric region is greater than an area ratio of the plurality of first apertures to an area of the first concentric region, and an area ratio of the plurality of third apertures to an area of the third concentric region is greater than the open ratio of the plurality of second apertures to the area of the second concentric region, wherein:
each of the first apertures, the second apertures, and the third apertures has a circular shape;
the first imaginary circle, the second imaginary circle, and the third imaginary circle are concentric and equally distanced;
each of a center of one first aperture, one second aperture, and one third aperture are disposed on a curve line having a function of r=a*θ+b, wherein r and θ are polar coordinates, and a and b are constants;
a first distance is between a center of the plate and the center of the first aperture on the curve line;
a second distance is between the center of the plate and the center of the second aperture on the curve line;
a third distance is between the center of the plate and the center of the third aperture on the curve line; and
a difference between the first distance and the second distance is identical to a difference between the second distance and the third distance, and
each of the center of another one of the first apertures, another one of the second apertures and another one of the third apertures are disposed on a second curve line having a function of r=a*θ+b, wherein r and θ are polar coordinates.

12. The GDP of claim 11 , wherein the first concentric region, the second concentric region and the third concentric region have the same width measured along a radial direction of the plate.

13. The GDP of claim 11 , wherein the first apertures, the second apertures and the third apertures have substantially the same size, a density of the second apertures is greater than a density of the first apertures, and a density of the third apertures is greater than the density of the second apertures.

14. The GDP of claim 11 , wherein a density of the first apertures equals to a density of the second apertures and a third density of the third apertures, a size of the second apertures is larger than a size of the first apertures, and a size of the third a

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Kai-Hsiang
• Koai Keith Kuang-Kuo

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title