Debris-removal groove for CMP polishing pad

Patent metadata

Field	Value
Publication number	US-10875146-B2
Application number	US-201615079824-A
Country	US
Kind code	B2
Filing date	Mar 24, 2016
Priority date	Mar 24, 2016
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. Radial drainage grooves extend through the polishing track facilitate polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

First claim

We claim:

1. A polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates with a polishing fluid and relative motion between the polishing pad and the at least one of semiconductor, optical and magnetic substrates, the polishing pad comprising the following:
a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, a perimeter, a radius extending from the center to the perimeter and a polishing track that surrounds the center and intersects the radius, the polishing track representing a working region of the polishing layer for polishing or planarizing the at least one of semiconductor, optical and magnetic substrates;
a plurality of feeder grooves (δ) intersecting the radius, the feeder grooves (δ) having land areas between the feeder grooves (δ) for polishing or planarizing of the at least one of semiconductor, optical or magnetic substrates with the polishing pad and the polishing fluid, the plurality of feeder grooves (δ) having an average cross-sectional feeder area (δ a ) calculated as width multiplied by depth, the average cross-sectional feeder area (δ a ) being total cross-sectional area of each feeder groove divided by total number of feeder grooves (δ);
at least one radial drainage groove (ρ) in the polishing layer intersecting with the plurality of feeder grooves (δ) for allowing the polishing fluid to flow from the plurality of feeder grooves (δ) to the at least one radial drainage groove (ρ) and the at least one radial drainage groove (ρ) having an average drainage cross-sectional area (ρ a ) calculated as width multiplied by depth, the average drainage cross-sectional area of the at least one radial drainage groove (ρ a ) being greater than the average cross-sectional feeder(δ a ) area as follows:
2*δ a ≤ρ a ≤8*δ a

wherein (n r ) represents the number of radial drainage grooves and (n f ) represents the number of feeder grooves, the number of feeder grooves being a total summation from each side of the radial drainage grooves (n f =2*feeder groove number) and
(0.15) n f *δ a ≤n r *ρ a ≤(0.35) n f *δ a

wherein n r equals a number of 1 to 16
and the at least one radial drainage groove (ρ) extending through the polishing track for facilitating polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

2. The polishing pad of claim 1 wherein 2*δ a ≤ρ a ≤6*δ a .

3. The polishing pad of claim 1 wherein the at least one radial drainage groove terminates into a circumferential perimeter groove and a perimeter land area surrounds the circumferential perimeter groove.

4. The polishing pad of claim 1 wherein the feeder grooves are concentric arcs.

5. The polishing pad of claim 1 wherein the at least one radial drainage groove has a depth greater than the feeder grooves.

6. A polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates with a polishing fluid and relative motion between the polishing pad and the at least one of semiconductor, optical and magnetic substrates, the polishing pad comprising the following:
a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, a perimeter, a radius extending from the center to the perimeter and a polishing track that surrounds the center and intersects the radius, the polishing track representing a working region of the polishing layer for polishing or planarizing the at least one of semiconductor, optical and magnetic substrates;
a plurality of feeder grooves (δ) intersecting the radius, the feeder grooves (δ) having land areas between the feeder grooves (δ) for polishing or planarizing of the at least one of semiconductor, optical or magnetic substrates with the polishing pad and the polishing fluid, the plurality of feeder grooves (δ) having an average cross-sectional feeder area (δ a ) calculated as width multiplied by depth, the average cross-sectional feeder area (δ a ) being total cross-sectional area of each feeder groove divided by total number of feeder grooves (δ);
radial drainage grooves (ρ) in the polishing layer intersecting with the plurality of feeder grooves (δ) for allowing the polishing fluid to flow from the plurality of feeder grooves (δ) to the radial drainage grooves (ρ) and the radial drainage grooves (ρ) having an average drainage cross-sectional area (ρ a ) calculated as width multiplied by depth, the average drainage cross-sectional area of the radial drainage grooves (ρ a ) being greater than the average cross-sectional feeder (δ a ) area as follows:
2*δ a ≤ρ a ≤8*δ a

wherein (n r ) represents the number of radial drainage grooves and (n f ) represents the number of feeder grooves, the number of feeder grooves being a total summation from each side of the radial drainage grooves (n f =2*feeder groove number) and
(0.15) n f *δ a ≤n r *ρ a ≤(0.35) n f *δ a

wherein n r equals a number of 2 to 12
and the radial drainage grooves (ρ) extend through the polishing track for facilitating polishing debris removal through the polishing track and underneath the at least one of semiconductor, optical and magnetic substrates and then beyond the polishing track toward the perimeter of the polishing pad during rotation of the polishing pad.

7. The polishing pad of claim 6 wherein 2*δ a ≤ρ a ≤6*δ a .

8. The polishing pad of claim 6 wherein the radial drainage grooves terminate into a circumferential perimeter groove and a perimeter land area surrounds the circumferential perimeter groove.

9. The polishing pad of claim 6 wherein the feeder grooves are concentric arcs.

10. The polishing pad of claim 6 wherein the radial drainage grooves have a depth greater than the feeder grooves.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Rohm And Haas Electronic Mat Cmp Holdings

Inventors

• Cook Lee Melbourne
• Tong Yuhua
• So Joseph
• Hendron Jeffrey James
• Connell Patricia

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• B24B57/02

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title

• B24B37/26 Primary

  characterised by the shape of the lapping pad surface, e.g. grooved · CPC title

• B24B37/04

  designed for working plane surfaces · CPC title

• B24D11/00

  Constructional features of flexible abrasive materials; Special features in the manufacture of such materials · CPC title