Hall sensor with buried hall plate

Patent metadata

Field	Value
Publication number	US-10872925-B2
Application number	US-201916453468-A
Country	US
Kind code	B2
Filing date	Jun 26, 2019
Priority date	Nov 4, 2015
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.

First claim

What is claimed is:

1. A Hall sensor, comprising:
A substrate having a surface;
first and second silicide layers spaced apart from each other along the surface;
a first doped region extending from the first silicide layer, and having a first dopant density;
a second doped region extending from the second silicide layer and laterally isolated from the first doped region, the second doped region having the first dopant density; and
a doped layer positioned under and connecting between the first doped region and the second doped region, the doped layer having a second dopant density lower than the first dopant density.

2. The Hall sensor of claim 1 , further comprising:
a current source coupled between the first silicide layer and the second silicide layer.

3. The Hall sensor of claim 1 , further comprising:
a third doped region positioned above the doped layer and laterally between the first doped region and the second doped region, the third doped region having a first conductivity type,
wherein each of the first doped region, the second doped region, and the doped layer has a second conductivity type opposite of the first conductivity type.

4. The Hall sensor of claim 1 , further comprising:
an isolation structure positioned above the doped layer and laterally between the first doped region and the second doped region,
wherein each of the first doped region, the second doped region, and the doped layer has a single conductivity type.

5. The Hall sensor of claim 1 , further comprising:
a third silicide layer spaced apart and between the first silicide layer and the second silicide layer along the surface; and
a third doped region extending from the third silicide layer and laterally isolated from the first doped region and the second doped region, the third doped region having the first dopant density,
wherein each of the first doped region, the second doped region, third doped region, and the doped layer has a single conductivity type.

6. The Hall sensor of claim 5 , further comprising:
a voltage sensor coupled to the third silicide layer.

7. The Hall sensor of claim 5 , further comprising:
a fourth doped region positioned above the doped layer and laterally between the first doped region and the third doped region, the fourth doped region having a first conductivity type,
wherein the single conductivity type of the first doped region, the second doped region, third doped region, and the doped layer is a second conductivity type opposite of the first conductivity type.

8. The Hall sensor of claim 5 , further comprising:
a fourth doped region positioned above the doped layer and laterally between the second doped region and the third doped region, the fourth doped region having a first conductivity type,
wherein the single conductivity type of the first doped region, the second doped region, third doped region, and the doped layer is a second conductivity type opposite of the first conductivity type.

9. The Hall sensor of claim 1 , wherein the doped layer includes a center portion free of overlapping the first doped region and the second doped region, the center portion has a third dopant density lower than the second dopant density.

10. The Hall sensor of claim 1 , further comprising:
a third doped region laterally surrounding the first doped region and the second doped region, the third doped region having the second dopant density and a greater depth from the surface than the first doped region and the second doped region,
wherein the doped layer is a bottom portion of the third doped region.

Assignees

• Texas Instruments Inc

Inventors

• Green Keith Ryan
• Aggarwal Rajni J
• Sharma Ajit

Classifications

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D84/0165

  the components including complementary IGFETs, e.g. CMOS devices · CPC title

• H10D84/907 Primary

  CMOS gate arrays · CPC title

• H10N59/00

  Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) · CPC title

• H01L43/04

  Electricity · mapped topic