Charged particle counting device, manufacturing method thereof, and charged particle counting system

Patent metadata

Field	Value
Publication number	US-10872288-B2
Application number	US-201816093266-A
Country	US
Kind code	B2
Filing date	Apr 20, 2018
Priority date	May 31, 2017
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

A charged particle counting device, a manufacturing method thereof, and a charged particle counting system are provided. The charged particle counting device includes: a bipolar transistor (10) and a magneto-electric induction coil (20), a gate (101) of the bipolar transistor is electrically connected to an end of the magneto-electric induction coil, and the other end of the magneto-electric induction coil is applied with a constant voltage, when a stream of positively charged particles passes through the magneto-electric induction coil and a first induced voltage generated by the magneto-electric induction coil is greater than a predetermined voltage threshold, a channel of the bipolar transistor is an N-type channel; and when a stream of negatively charged particles passes through the magneto-electric induction coil and a second induced voltage generated by the magneto-electric induction coil is less than the predetermined voltage threshold, the channel of the bipolar transistor is a P-type channel.

First claim

What is claimed is:

1. A charged particle counting device, comprising:
a bipolar transistor and a magneto-electric induction coil,
wherein a gate of the bipolar transistor is electrically connected to an end of the magneto-electric induction coil, and the other end of the magneto-electric induction coil is applied with a constant voltage,
when a stream of positively charged particles passes through the magneto-electric induction coil, and a first induced voltage generated by the magneto-electric induction coil is greater than a predetermined voltage threshold, a channel of the bipolar transistor is an N-type channel and the N-type channel is in an open state; and when a stream of negatively charged particles passes through the magneto-electric induction coil, and a second induced voltage generated by the magneto-electric induction coil is less than the predetermined voltage threshold, the channel of the bipolar transistor is a P-type channel and the P-type channel is in the open state.

2. The device according to claim 1 , wherein the device further comprises: an analog-digital converter, a first pole of the bipolar transistor is electrically connected with the analog-digital converter and a second pole of the bipolar transistor is used to apply a supply voltage, and the first and second poles are one of a source electrode and a drain electrode, respectively.

3. The device according to claim 1 , wherein the other end of the magneto-electric induction coil is grounded.

4. The device according to claim 1 , wherein the bipolar transistor is a carbon nanotube transistor comprising:
a base substrate, and a gate pattern, an insulating layer, a carbon nanotube film pattern, an electron blocking layer, a source-drain electrode metal pattern, a protection layer and an electrode layer which are successively disposed on the base substrate, the source-drain electrode metal pattern comprising the source electrode and the drain electrode.

5. The device according to claim 4 , wherein the electrode layer is prepared from indium tin oxide.

6. The device according to claim 4 , wherein the source-drain electrode metal pattern is a copper metal pattern having a thickness of 300 nanometers.

7. The device according to claim 4 , wherein the protection layer is an alumina layer having a thickness of 100 nanometers.

8. The device according to claim 4 , wherein the base substrate is one of a glass substrate, a silicon substrate and a flexible polyimide substrate.

9. A charged particle counting system, comprising the charged particle counting device according to claim 1 .

10. The system according to claim 9 , further comprising one of a vacuum chamber which is configured to accommodate charged particles and in which the charged particle counting device is disposed and a container which is configured to contain a solution of the charged particles and in which the charged particle counting device is disposed.

11. A manufacturing method of a charged particle counting device, comprising:
forming a bipolar transistor;
electrically connecting a gate electrode of the bipolar transistor with an end of a magneto-electric induction coil; and
applying a constant voltage to the other end of the magneto-electric induction coil.

12. The method according to claim 11 , wherein the method further comprises:
electrically connecting a first pole of the bipolar transistor with an analog-digital converter; and
applying a supply voltage to a second pole of the bipolar transistor, and the first and second poles being one of a source electrode and a drain electrode, respectively.

13. The method according to claim 12 , wherein the bipolar transistor is a carbon nanotube transistor, and the forming a bipolar transistor comprises:
forming a gate pattern on a base substrate;
forming an insulating layer on the base substrate formed with the gate pattern;
forming a carbon nanotube film pattern on the base substrate formed with the insulating layer;
forming an electron blocking layer on the base substrate formed with the carbon nanotube film pattern;
forming a source-drain electrode metal pattern on the base substrate formed with the electron blocking layer, the source-drain electrode metal pattern comprising a source electrode and a drain electrode;
forming a protection layer on the base substrate formed with the source-drain electrode metal pattern; and
forming an electrode layer on the base substrate formed with the protection layer.

14. The method according to claim 13 , wherein the forming an electrode layer on the base substrate formed with the protection layer comprises:
forming the electrode layer on the base substrate formed with the protection layer by way of depositing indium tin oxide.

15. The method according to claim 13 , wherein the forming a carbon nanotube film pattern on the base substrate formed with the insulating layer, comprises:
forming a carbon nanotube film layer on the insulating layer by a Czochralski method; and
performing one-time patterning process on the carbon nanotube film layer to form the carbon nanotube film pattern.

16. The method according to claim 13 , wherein the source-drain electrode metal pattern is a copper metal pattern having a thickness of 300 nanometers.

17. The method according to claim 13 , wherein forming a protection layer on the base substrate formed with the source-drain electrode metal pattern comprises:
forming the protection layer on the base substrate formed with the source-drain electrode metal pattern by way of atomic layer deposition.

18. The method according to claim 13 , wherein the protection layer is an alumina layer having a thickness of 100 nanometers.

19. The method according to claim 13 , wherein the base substrate is one of a glass substrate, a silicon substrate and a flexible polyimide substrate.

20. The method according to claim 11 , wherein the applying a constant voltage to the other end of the magneto-electric induction coil comprises:
grounding the other end of the magneto-electric induction coil.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Ju changcheng

Classifications

• H10D1/20

  Inductors · CPC title

• G01N2015/0687

  in solutions, e.g. non volatile residue · CPC title

• G01T1/00

  Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation (G01T3/00, G01T5/00 take precedence) · CPC title

• G01N2015/0053

  in liquids, e.g. trouble · CPC title

• H01J37/244

  Detectors; Associated components or circuits therefor · CPC title