Integrated electro-optical device

Patent metadata

Field	Value
Publication number	US-10871663-B2
Application number	US-201916401956-A
Country	US
Kind code	B2
Filing date	May 2, 2019
Priority date	May 3, 2018
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

A device, includes: a ring waveguide; a diode comprising a junction extending at least partly in the ring waveguide; and a first circuit configured to supply a signal representative of a leakage current in the diode.

First claim

What is claimed is:

1. A device comprising:
a ring waveguide;
a diode comprising a junction extending at least partly in the ring waveguide;
a measurement circuit coupled to the diode, the measurement circuit configured to generate a signal representative of a leakage current in the diode; and
a control circuit coupled to the measurement circuit, the control circuit comprising:
a memory element storage comprising instructions and a resonance wavelength target value; and
a processor in communication with the memory element storage, wherein the processor executes the instructions to:
determine a maximum value of the leakage current from the signal representative of the leakage current in the diode,
determine a value of a resonance wavelength of the ring waveguide based on the maximum value of the leakage current; and
calculate a difference between the determined value of the resonance wavelength of the ring waveguide and the resonance wavelength target value and, based thereon, modify a temperature of the ring waveguide.

2. The device of claim 1 , wherein the junction of the diode and the ring waveguide are concentric.

3. The device of claim 1 , wherein the diode is a PN-type diode.

4. The device of claim 1 , wherein the diode is a PiN-type diode having a junction corresponding to an intrinsic region of the diode.

5. The device of claim 1 , wherein the junction of the diode fully extends into the ring waveguide.

6. The device of claim 1 , further comprising a heating element coupled to the control circuit.

7. The device of claim 6 , wherein the heating element is controlled according to the signal representative of the leakage current.

8. The device of claim 6 , wherein modifying the temperature of the ring waveguide comprises supplying,
to the heating element, a control signal determined by the calculated difference.

9. The device of claim 1 , further comprising at least another waveguide optically coupled to the ring waveguide.

10. The device of claim 1 , wherein a width of the ring waveguide is in a range from 200 nm to 500 nm.

11. The device of claim 1 , further comprising an insulating layer, and wherein the ring waveguide rests on top of and is in contact with the insulating layer.

12. The device of claim 11 , wherein a height of the ring waveguide from the insulating layer is in a range from 200 to 500 nm.

13. The device of claim 1 , wherein the ring waveguide is configured to transmit signals having wavelengths in a range from approximately 1 μm to approximately 2 μm.

14. The device of claim 1 , wherein the signal representative of the leakage current in the diode takes a plurality of values, each of which is representative of the leakage current in the diode for a given wavelength of the signal supplied to an input of the ring waveguide.

15. A device comprising:
a ring waveguide;
a diode comprising a p/n junction, the p/n junction comprising a region disposed in the ring waveguide;
a transimpedance amplifier coupled to the diode; and
a processing circuit comprising:
a memory element storage comprising instructions; and
a microprocessor in communication with the memory element storage, wherein the microprocessor executes the instructions to
receive an output from the transimpedance amplifier,
determine a value of a resonance wavelength of the ring waveguide by determining a wavelength corresponding to a maximum value of the output from the transimpedance amplifier, and
calculate a difference between the determined value of the resonance wavelength of the ring waveguide and a resonance wavelength target value and, based thereon, modify a temperature of the ring waveguide.

16. The device of claim 15 , wherein the device further comprises a heating element coupled to the output of the processing circuit, wherein the microprocessor executes the instructions to
output a control signal to the heating element based on the calculated difference.

17. The device of claim 16 , wherein the heating element comprises a resistor arranged proximate a portion of the ring waveguide, wherein the microprocessor is coupled between an analog-to-digital converter and a digital-to-analog converter.

18. A device comprising:
a ring waveguide;
a heater configured to heat the ring waveguide;
a diode comprising a p/n junction, the p/n junction comprising a region disposed in the ring waveguide;
an operational amplifier coupled to the diode, the operational amplifier configured to supply a signal representative of a leakage current in the diode; and
a processing circuit comprising:
a memory element storage comprising instructions; and
a microcontroller in communication with the memory element storage, wherein the microcontroller executes the instructions to
receive the signal from the operational amplifier,
determine a value of a resonance wavelength of the ring waveguide by determining a wavelength corresponding to a maximum value of the leakage current, and
calculate a difference between the determined value of the resonance wavelength of the ring waveguide and a resonance wavelength target value and, based thereon, modify a temperature of the ring waveguide.

19. The device of claim 18 , wherein the heater is controlled according to the signal representative of the leakage current.

20. The device of claim 18 , wherein the microcontroller executes the instructions to
provide, to the heater, a control signal determined by the calculated difference.

Assignees

• St Microelectronics Crolles 2 Sas
• Commissariat Energie Atomique
• Commissariat A Lenergie Atomique Etaux Energies Alternatives

Inventors

• Le Maitre Patrick
• Michit Nicolas
• Carpentier Jean-Francois
• Charbonnier Benoit

Classifications

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F30/221

  the potential barrier being a PN homojunction · CPC title

• H10F77/147

  Shapes of bodies · CPC title

• G01R19/30

  Measuring the maximum or the minimum value of current or voltage reached in a time interval (G01R19/04 takes precedence) · CPC title

• G02F2203/21

  Thermal instability, i.e. DC drift, of an optical modulator; Arrangements or methods for the reduction thereof · CPC title