Detection panel, manufacturing method thereof and detection device

Patent metadata

Field	Value
Publication number	US-10871582-B2
Application number	US-201916398935-A
Country	US
Kind code	B2
Filing date	Apr 30, 2019
Priority date	Sep 11, 2018
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

The present disclosure relates to a detection panel, a manufacturing method thereof and a detection device. The detection panel comprises: a base substrate and a photoelectric conversion structure located on the base substrate, and a display structure located on a side of the photoelectric conversion structure facing away from the base substrate and electrically connected to the photoelectric conversion structure; wherein the photoelectric conversion structure is configured to convert an optical signal into an electrical signal, and the display structure is configured to perform image display according to the electrical signal.

First claim

The invention claimed is:

1. A detection panel, comprising: a base substrate and a photoelectric conversion structure located on the base substrate, and a display structure located on a side of the photoelectric conversion structure facing away from the base substrate and electrically connected to the photoelectric conversion structure; wherein the photoelectric conversion structure is configured to convert an optical signal into an electrical signal, and the display structure is configured to perform image display according to the electrical signal;
wherein the detection panel further comprises a scintillation layer located on a side facing away from the display structure, of the base substrate.

2. The detection panel according to claim 1 , wherein the photoelectric conversion structure comprises a first electrode, a photodiode and a second electrode which are sequentially stacked on the base substrate, and the second electrode is electrically connected to the display structure.

3. The detection panel according to claim 2 , wherein the display structure comprises a third electrode and an electronic ink layer which are sequentially stacked on the photoelectric conversion structure; wherein the third electrode and the second electrode are integrated.

4. The detection panel according to claim 3 , wherein an orthographic projection of the electronic ink layer on the base substrate at least partially covers an orthographic projection of the photoelectric conversion structure on the base substrate.

5. The detection panel according to claim 3 , wherein the electronic ink layer comprises microcapsules in which black particles and white particles with opposite charge polarities are present.

6. The detection panel according to claim 5 , further comprising a thin film transistor, wherein the thin film transistor comprises a gate, an active layer, a source and a drain, and the second electrode and the drain are integrated.

7. The detection panel according to claim 6 , further comprising a planarization layer that is located between the first electrode and the thin film transistor and has a via hole, wherein the photodiode is located in the via hole of the planarization layer, and the electronic ink layer is partially located in the via hole of the planarization layer; the source, the gate, the active and the gate is sequentially disposed on a side of the planarization layer facing away from the base substrate.

8. The detection panel according to claim 6 , further comprising a first electrode lead electrically connected to the first electrode, wherein the first electrode lead comprises a light shielding portion, and an orthographic projection of the light shielding portion on the base substrate covers an orthographic projection of the active layer on the base substrate.

9. The detection panel according to claim 6 , further comprising a second electrode lead electrically connected to the second electrode to an integrated circuit, wherein a gate of the thin film transistor is connected to a gate signal line, and a source of the thin film transistor is connected to the second electrode lead.

10. A detection device, comprising the detection panel according to claim 1 , further comprising a radiation emitting source located on a side of the scintillation layer facing away from the base substrate.

11. A manufacturing method of the detection panel according to claim 1 , comprising:
forming a photoelectric conversion structure on an base substrate, wherein the photoelectric conversion structure is configured to convert an optical signal into an electrical signal; and
forming a display structure electrically connected to the photoelectric conversion structure on the base substrate on which the photoelectric conversion structure is formed, wherein the display structure is configured to perform image display according to the electrical signal.

12. The manufacturing method according to claim 11 , wherein forming the photoelectric conversion structure comprises:
forming a first electrode on the base substrate;
forming a planarization layer that is located on a side of the first electrode facing away from the base substrate and has a via hole, wherein the via hole exposes the first electrode;
forming a photodiode in the via hole and on the side of the first electrode facing away from the base substrate; and
forming, by a patterning process, a second electrode located in the via hole and on a side of the photodiode facing away from the base substrate, and a drain located on a side of the planarization layer facing away from the base substrate.

13. The manufacturing method according to claim 12 , after forming the second electrode, further comprising:
forming an electronic ink layer partially located in the via hole and on a side of the second electrode facing away from the base substrate.

Assignees

• Beijing Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Li Jing
• Zhang Wenyu
• Li Liangjie
• Dong Hao
• Xu Da

Classifications

• H10F39/011

  Manufacture or treatment of image sensors covered by group H10F39/12 · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• G01T1/2018 Primary

  Scintillation-photodiode combinations · CPC title

• H10F39/18 Primary

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• G02F1/1677

  Structural association of cells with optical devices, e.g. reflectors or illuminating devices · CPC title