Optoelectronic component

Patent metadata

Field	Value
Publication number	US-10868223-B2
Application number	US-201916254659-A
Country	US
Kind code	B2
Filing date	Jan 23, 2019
Priority date	Jan 23, 2018
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

An optoelectronic component includes a semiconductor chip that emits primary radiation from the blue spectral region, a conversion element including at least three phosphors each converting the primary radiation into secondary radiation, wherein the first phosphor emits secondary radiation from the green spectral region, the second phosphor emits secondary radiation from the red spectral region, the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation.

First claim

The invention claimed is:

1. An optoelectronic component comprising:
a semiconductor chip that emits primary radiation from the blue spectral region,
a conversion element comprising at least three phosphors each converting the primary radiation into secondary radiation,
wherein the first phosphor emits secondary radiation from the green spectral region,
the second phosphor emits secondary radiation from the red spectral region,
the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region,
the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation, and
the second phosphor has a half-width of at least 60 nm to at most 90 nm.

2. The optoelectronic component according to claim 1 , wherein a dominant wavelength (Mom) of the blue spectral region of the semiconductor chip is less than 455 nm.

3. The optoelectronic component according to claim 1 , wherein the first phosphor is selected from the group consisting of yttrium aluminum gallium garnet, lutetium aluminum garnet, lutetium aluminum gallium garnet, lutetium yttrium aluminum garnet, ortho silicate and nitridoorthosilicate.

4. The optoelectronic component according to claim 1 , wherein the second phosphor is M2Si5N8 or a strontium calcium aluminum silicon nitride, M having at least Eu and additionally Ca, Sr and/or Ba.

5. The optoelectronic component according to claim 1 , wherein the third phosphor is K2SiF6:Mn.

6. The optoelectronic component according to claim 1 , wherein the third phosphor has a half-width of at least 20 nm to at most 50 nm.

7. The optoelectronic component according to claim 1 , wherein the Ra value is greater than 90.

8. The optoelectronic component according to claim 1 , wherein the Ra value is greater than 97.

9. The optoelectronic component according to claim 1 , wherein the R9 value is greater than 90.

10. The optoelectronic component according to claim 1 , wherein the R9 value is greater than 95.

11. The optoelectronic component according to claim 1 , wherein the first phosphor is an yttrium aluminum gallium garnet and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride.

12. The optoelectronic component according to claim 1 , wherein the first phosphor is a lutetium aluminum garnet or lutetium aluminum gallium garnet and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride.

13. The optoelectronic component according to claim 1 , wherein the first phosphor is a lutetium yttrium aluminum garnet and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride.

14. The optoelectronic component according to claim 1 , wherein the first phosphor is an orthosilicate or nitridoorthosilicate and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride.

15. The optoelectronic component according to claim 1 , wherein a proportion of the potassium-silicon-fluoride phosphor is at least 55 wt-% to at most 82 wt-% relative to the total proportion of the second and third phosphors.

16. The optoelectronic component according to claim 1 , wherein a proportion of the potassium-silicon-fluoride phosphor is at least 80 wt-% to at most 84 wt-% relative to the total proportion of the second and third phosphors.

17. The optoelectronic component according to claim 1 , wherein a minimum proportion of the potassium-silicon-fluoride phosphor is at least 53 wt-% and at most 67 wt-% relative to the total proportion of said second and third phosphors.

18. An optoelectronic component comprising:
a semiconductor chip that emits primary radiation from the blue spectral region,
a conversion element comprising at least three phosphors each converting the primary radiation into secondary radiation,
wherein the first phosphor emits secondary radiation from the green spectral region,
the second phosphor emits secondary radiation from the red spectral region,
the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region, and
the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation, and
wherein a proportion of the potassium-silicon-fluoride phosphor is at least 55 wt-% to at most 82 wt-% relative to the total proportion of the second and third phosphors, or a proportion of the potassium-silicon-fluoride phosphor is at least 80 wt-% to at most 84 wt-% relative to the total proportion of the second and third phosphors, or a minimum proportion of the potassium-silicon-fluoride phosphor is at least 53 wt-% to at most 67 wt-% relative to the total proportion of the second and third phosphors.

19. The optoelectronic component according to claim 18 , wherein the second phosphor has a half-width of at least 60 nm to at most 90 nm.

20. An optoelectronic component comprising:
a semiconductor chip that emits primary radiation from the blue spectral region,
a conversion element comprising at least three phosphors each converting the primary radiation into secondary radiation,
wherein the first phosphor emits secondary radiation from the green spectral region,
the second phosphor emits secondary radiation from the red spectral region,
the third phosphor is a potassium-silicon-fluoride phosphor that emits secondary radiation from the red spectral region,
the component has an Ra value of at least 80 and an R9 value of at least 75, and emits white mixed radiation,
wherein the second phosphor is M2Si5N8 or a strontium calcium aluminum silicon nitride, M having at least Eu and additionally Ca, Sr and/or Ba, or
the first phosphor is an yttrium aluminum gallium garnet and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride, or
the first phosphor is a lutetium aluminum garnet or lutetium aluminum gallium garnet and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride, or
the first phosphor is a lutetium yttrium aluminum garnet and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride, or
the first phosphor is an orthosilicate or nitridoorthosilicate and the second phosphor is either M2Si5N8 or a strontium calcium aluminum silicon nitride.

Assignees

• Osram Oled Gmbh

Inventors

• Butendeich Rainer
• Baumgartner Alexander

Classifications

• C09K11/77347 Primary

  Silicon Nitrides or Silicon Oxynitrides · CPC title

• C09K11/7774

  Aluminates · CPC title

• H10H20/8513 Primary

  having two or more wavelength conversion materials · CPC title

• C09K11/617

  Silicates · CPC title

• C09K11/0883

  Arsenides; Nitrides; Phosphides · CPC title