Epitaxial formation structures and associated methods of manufacturing solid state lighting devices

Patent metadata

Field	Value
Publication number	US-10868212-B2
Application number	US-201314077548-A
Country	US
Kind code	B2
Filing date	Nov 12, 2013
Priority date	Sep 10, 2009
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

Epitaxial formation structures and associated methods of manufacturing solid state lighting (“SSL”) devices with target thermal expansion characteristics are disclosed herein. In one embodiment, an SSL device includes a composite structure having a composite CTE temperature dependency, a formation structure on the composite structure, and an SSL structure on the formation structure. The SSL structure has an SSL temperature dependency, and a difference between the composite CTE and SSL temperature dependencies is below 3 ppm/° C. over the temperature range.

First claim

I claim:

1. An integrated semiconductor device assembly for use in forming a solid state lighting (SSL) device, the assembly comprising:
a substrate comprising a composite ceramic material, the composite ceramic material having a composite coefficient of thermal expansion (CTE) temperature dependency over a temperature range from 800° C. to 1100° C.;
a formation structure on the substrate, the formation structure comprising at least one of Si(1,1,1) silicon, gallium nitride (GaN), silicon carbide (SiC), sapphire (Al 2 O 3 ), zinc oxide (ZnO 2 ), or gallium arsenide (GaAs); and
an SSL structure on the formation structure, the SSL structure having an SSL CTE temperature dependency over the temperature range, the SSL structure comprising
a first semiconductor material including P-type gallium nitride,
a second semiconductor material including N-type gallium nitride, and
an active region, between the first and second semiconductor materials, comprising indium gallium nitride,

wherein a difference between the composite CTE and SSL CTE temperature dependencies is below a target threshold of 0.3 ppm/° C. over the temperature range, and
wherein the composite ceramic material comprises polycrystalline aluminum nitride (AlN), yttrium oxide (Y 2 O 3 ) and hafnium carbide (HfC) sintered together.

2. The assembly of claim 1 wherein the target threshold is below 0.1 ppm/° C.

3. The assembly of claim 1 wherein:
the polycrystalline aluminum nitride comprises 0.4 to 0.7 by volume of the composite ceramic material, and
the yttrium oxide comprises 0.01 to 0.2 by volume of the composite ceramic material.

Assignees

• Micron Technology Inc

Inventors

• Pinnington Thomas

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916 Primary

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/815

  having stress relaxation structures, e.g. buffer layers · CPC title

• H10H20/018

  Bonding of wafers · CPC title