Layout for needle cell trench MOSFET

Patent metadata

Field	Value
Publication number	US-10868170-B2
Application number	US-201816203089-A
Country	US
Kind code	B2
Filing date	Nov 28, 2018
Priority date	Nov 29, 2017
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

A power semiconductor die conducts a load current between front and back side load terminals. The die includes an active region with a plurality of columnar trench cells. Each columnar trench cell includes: a section of a drift zone, a section of a channel zone and a section of a source zone, the channel zone section being electrically connected to the front side load terminal and isolating the source zone section from the drift zone section; and a control section with at least one control electrode in a control trench. An edge termination region between the die edge and the active region includes a front side zone configured to have an electrical potential different from an electrical potential of the front side load terminal. An isolating trench structure is arranged between the front side zone and the channel zone which is electrically connected to the front side load terminal.

First claim

What is claimed is:

1. A power semiconductor die configured to conduct a load current between a front side load terminal and a back side load terminal of the power semiconductor die, the power semiconductor die comprising:
an active region with a plurality of columnar trench cells, each columnar trench cell comprising:
a section of a drift zone of a first conductivity type, a section of a channel zone of a second conductivity type and a section of a source zone of the first conductivity type, the channel zone section being electrically connected to the front side load terminal and isolating the source zone section from the drift zone section; and
a control section with at least one control electrode in a control trench, the control section being configured to induce an inversion channel within the channel zone section for conduction of the load current;

a die edge;
an edge termination region between the die edge and the active region, the edge termination region including a front side zone configured to have an electrical potential different from an electrical potential of the front side load terminal; and
an isolating trench structure arranged between the front side zone and the channel zone which is electrically connected to the front side load terminal,
wherein the isolating trench structure comprises a trench electrode,
wherein the power semiconductor die further comprises a trench connector structure electrically connecting the trench electrode with the at least one control electrode or, respectively, with each of the at least one control electrode of the columnar trench cells, and
wherein the trench connector structure comprises at least one stripe trench extending away from the isolating trench structure into the active region.

2. The power semiconductor die of claim 1 , wherein the isolating trench structure surrounds the channel zone which is electrically connected to the front side load terminal.

3. The power semiconductor die of claim 1 , wherein the entire region between the isolating trench structure and the die edge is devoid of any electrical connection between the channel zone and the front side load terminal.

4. The power semiconductor die of claim 1 , wherein the isolating trench structure comprises a trench insulator arranged in contact with the channel zone which is electrically connected to the front side load terminal.

5. The power semiconductor die of claim 1 , wherein a transition between the channel zone and the drift zone forms a pn-junction, and wherein the isolating trench structure extends further along a vertical direction than the pn-junction.

6. The power semiconductor die of claim 5 , wherein an intersection angle between the pn-junction and the trench insulator is within a range of 80° to 100°.

7. The power semiconductor die of claim 5 , wherein within the active region, the pn-junction extends substantially horizontally at a first level, and wherein the trench insulator intersects with the pn-junction at a level within a range of 90% to 150% of the first level.

8. The power semiconductor die of claim 1 , wherein a vertically extending channel zone termination sidewall terminates the channel zone.

9. The power semiconductor die of claim 1 , wherein a distance between the front side zone and the isolating trench structure is at least twice a pitch width of the columnar trench cells, and wherein the pitch width is measured along a lateral direction of each columnar trench cell.

10. The power semiconductor die of claim 1 , wherein the front side zone is a semiconductor zone, and/or wherein the front side zone has an electrical potential of the back side load terminal.

11. The power semiconductor die of claim 1 , wherein the at least one stripe trench passes at least one non-active columnar trench cell until it reaches one of the plurality of columnar trench cells.

12. The power semiconductor die of claim 11 , wherein the at least one stripe trench extends along a first lateral direction and connects two sections of the isolating trench structure with each other.

13. The power semiconductor die of claim 12 , wherein the control trenches of the columnar trench cells extend along a second lateral direction and join into the at least one stripe trench.

14. The power semiconductor die of claim 11 , wherein the control electrodes of the control sections are arranged in contact with a stripe trench electrode of the at least one stripe trench.

15. The power semiconductor die of claim 1 , wherein along a distance between each outermost one of the plurality of columnar trench cells and the isolating trench structure, the power semiconductor die comprises at least two non-active columnar trench cells.

16. A power semiconductor die, comprising:
a front side load terminal;
a back side load terminal;
an active region with a plurality of trench cells formed in a semiconductor body, each trench cell comprising:
a section of a drift zone of a first conductivity type, a section of a channel zone of a second conductivity type and a section of a source zone of the first conductivity type, the channel zone section being electrically connected to the front side load terminal and isolating the source zone section from the drift zone section;
a control section with at least one control electrode in a control trench; and
a needle-shaped field plate trench;

a plurality of mesa contact plugs extending from the front side load terminal into the semiconductor body to contact the channel zone sections of the plurality of trench cells;
an edge termination region between an edge of the power semiconductor die and the active region; and
an isolating trench structure laterally surrounding some or all outermost ones of the mesa contact plugs so that the outermost ones of the mesa contact plugs surrounded by the isolating trench structure are electrically isolated from the edge termination region.

17. A method of processing a power semiconductor die, the power semiconductor die being configured to conduct a load current between a front side load terminal and a back side load terminal of the power semiconductor die, the method comprising:
forming an active region with a plurality of columnar trench cells, each columnar trench cell comprising: a section of a drift zone of a first conductivity type, a section of a channel zone of a second conductivity type and a source zone of the first conductivity type, the channel zone section being electrically connected to the front side load terminal and isolating the source zone from the drift zone section; and a control section with at least one control electrode in a control trench, the control section being configured to induce an inversion channel within the channel zone section for conduction of the load current, the power semiconductor die having a die edge and an edge termination region between the die edge and the active region, the edge termination region including a front side zone configured to have an electrical potential different from an electrical potential of the front side load terminal;
providing an isolating trench structure arranged between the front side zone and the channel zone which is electrically connected to the front side load terminal,
wherein the isolating trench structure comprises a trench electrode,
wherein the method further comprises forming a trench connector structure electrically connecting the trench electrode with the at least one control electrode or, respectively, with each of the at least one control electrode of the columnar trench cells, and

wherein the trench connector structure

Assignees

• Infineon Technologies Austria Ag

Inventors

• Hutzler Michael
• Altstaetter Christof

Classifications

• H10W10/00

  Isolation regions in semiconductor bodies between components of integrated devices · CPC title

• H10W10/01

  Manufacture or treatment · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D64/112

  comprising multiple field plate segments · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title