Single-component artificial neuron based on Mott insulators, network of artificial neurons and corresponding manufacturing method

Patent metadata

Field	Value
Publication number	US-10867237-B2
Application number	US-201515307269-A
Country	US
Kind code	B2
Filing date	Apr 24, 2015
Priority date	Apr 28, 2014
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

An artificial neuron includes a single-component electric dipole including a single material which belongs to the class of Mott insulators and is connected to first and second electric electrodes.

First claim

The invention claimed is:

1. An artificial neuron implementing functions of integration, leakage and firing, wherein the artificial neuron consists of:
a single-component electrical dipole comprising a material belonging to the family of Mott insulators connected to first and second electrical electrodes, the artificial neuron being a Leaky Integrate-and-Fire (LIF) reference model artificial neuron consisting of the single-component electrical dipole.

2. The artificial neuron according to claim 1 , wherein said Mott insulator material comprises:
a compound of formula AM 4 Q 8 , with A comprising at least one of the following elements: Ga, Ge, Zn; M comprising at least one of the following elements: V, Nb, Ta, Mo: and Q comprising at least one of the following elements: S, Se; or
an inorganic compound of formula (V 1-x M x ) 2 O 3 , with 0≤x≤1, M comprising at least one of the following elements: Ti, Cr, Fe, Al, or Ga; or
an inorganic compound of NiS 2-x Se x , with 0≤x≤1; or
a compound of formula VO 2 ; or
an organic Mott insulator compound.

3. The artificial neuron according to claim 1 , wherein the first and second electrical electrodes are each constituted by an electrically conductive material comprising:
one of the following elements: platinum (Pt), gold (Au), molybdenum (Mo), graphite (C), aluminum (Al), copper (Cu), doped silicon (Si); or
one of the following alloys: brass (Cu—Zn), steel (Fe—C), bronze (Cu—Sn); or
one of the following transition metal compounds: TiN, TaN, RuO 2 , SrRuO 3 , CuS 2 .

4. The artificial neuron according to claim 1 , wherein said Mott insulator material takes the form of:
a thin layer; or
a block of crystal; or
a nanotube; or
a nanowire.

5. A network of neurons comprising a plurality of artificial neurons, wherein at least one artificial neuron is according to claim 1 .

6. A neuromorphic electronic circuit comprising a plurality of artificial neurons, wherein at least one artificial neuron is according to claim 1 .

7. A method for manufacturing an artificial neuron implementing the functions of integration, leakage and firing, wherein the method comprises the following acts:
obtaining a material belonging to the family of Mott insulators;
obtaining a Leaky Integrate-and-Fire (LIF) reference model artificial neuron consisting of
a single-component electrical dipole by deposition of a layer of conductive material:
at a first extremity of said Mott insulator material to form a first electrical electrode, and
at a second extremity of said Mott insulator material to form a second electrical electrode.

8. The method for manufacturing according to claim 7 , wherein said act of obtaining a material is performed by cutting out a block of Mott insulator crystal, and wherein said act of depositing a layer of conductive material is performed as a function of said cut-out block of crystal.

9. The method for manufacturing according to claim 7 , wherein said act of obtaining a material is performed by depositing, on a substrate wafer, a thin layer of a Mott insulator material,
and wherein said act of depositing a layer of conductive material is performed as a function of said deposited thin layer.

10. The method for manufacturing according to claim 7 , wherein said act of obtaining a material is performed by depositing, on a substrate wafer, a nanotube based on a Mott insulator material,
and wherein said act of depositing a layer of conductive material is performed as a function of said deposited nanotube.

11. The method for manufacturing according to claim 7 , wherein said act of obtaining a material is performed by depositing, on a substrate wafer, a nanowire based on a Mott insulator material,
and wherein said act of depositing a layer of conductive material is performed as a function of said deposited nanowire.

Assignees

• Centre National De La Rech Scientifique—Cnrs
• Univ Nantes
• Univ Paris Sud Xi

Inventors

• Cario Laurent
• Corraze Benoit
• Stoliar Pablo
• Tranchant Julien
• Janod Etienne
• Besland Marie-Paule
• Rozenberg Marcelo

Classifications

• G06N3/065

  Analogue means · CPC title

• G06N3/049 Primary

  Temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs · CPC title

• G06N3/063 Primary

  using electronic means · CPC title

• G11C13/0002

  using resistive RAM [RRAM] elements · CPC title

• G11C11/54

  using elements simulating biological cells, e.g. neuron · CPC title