MEMS device and method for forming the same

US10865099B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10865099-B2
Application numberUS-201816116105-A
CountryUS
Kind codeB2
Filing dateAug 29, 2018
Priority dateAug 29, 2018
Publication dateDec 15, 2020
Grant dateDec 15, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer, a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A microelectromechanical system (MEMS) device comprising: a first layer and a second layer comprising a same material; a third layer disposed between the first layer and the second layer, wherein the third layer comprises a first insulating layer, a second insulating layer and a semiconductor layer between the first insulating layer and the second insulating layer; a first air gap separating the first layer and the third layer; a second air gap separating the second layer and the third layer; a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer, wherein the first pillars penetrate the first insulating layer to be in contact with the semiconductor layer of the third layer; and a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer, wherein the second pillars penetrate the second insulating layer to be in contact with the semiconductor layer of the third layer. 2. The MEMS device of claim 1 , wherein the first pillars and the second pillars comprise semiconductor materials. 3. The MEMS device of claim 2 , wherein the first pillars, the second pillars, the first layer and the second layer comprise a same material. 4. The MEMS device of claim 2 , wherein the first pillars, the second pillars and the semiconductor layer of the third layer comprise a same material. 5. The MEMS device of claim 1 , wherein the first layer has a first movable portion, a first anchor portion, and at least a first hole formed in the first movable portion, and the second layer has a second movable portion and a second anchor portion. 6. The MEMS device of claim 5 , wherein the first pillars are in contact with the first movable portion and the second pillars are in contact with the second movable portion. 7. The MEMS device of claim 5 , wherein the second layer further comprises a plurality of second holes, and each of the second holes is formed between the second anchor portion and the second pillars. 8. The MEMS device of claim 5 , wherein the second layer further comprises a plurality of second holes, and the second pillars are formed between the second anchor portion and the second holes. 9. The MEMS device of claim 5 , wherein the third layer comprises at least a third hole, and the third hole is aligned with first hole. 10. The MEMS device of claim 8 , wherein the third layer comprises at least a third hole, and the third hole is aligned with the first hole and one of the second holes. 11. A microelectromechanical system (MEMS) device comprising: a substrate having an environment port in communication with an ambient environment; a first layer over the substrate and comprising a first movable portion and at least a first hole formed in the first movable portion; a second layer over the first layer and comprising a second movable portion and a plurality of second holes formed in the second movable portion; a third layer disposed between the first layer and the second layer and comprising a plurality of third holes; a plurality of first pillars extending from the first movable portion of the first layer to the third layer; and a plurality of second pillars extending from the second movable portion of the second layer to the third layer, wherein the first pillars and the second pillars comprise a same material, and the first pillars are misaligned with the second pillars. 12. The MEMS device of claim 11 , wherein the first layer further comprises a first anchor portion substantially surrounding the first movable portion. 13. The MEMS device of claim 11 , wherein the second layer further comprises a second anchor portion. 14. The MEMS device of claim 13 , wherein the second holes are formed between the second anchor portion and the second pillars. 15. The MEMS device of claim 13 , wherein the second pillars are formed between the second anchor portion and the second holes. 16. The MEMES device of claim 15 , wherein the second holes are aligned with the third holes, and one of the second holes and one of the third holes are aligned with the first hole. 17. A microelectromechanical system (MEMS) device comprising: a first layer and a second layer comprising a same material; a third layer disposed between the first layer and the second layer; a first air gap separating the first layer and the third layer; a second air gap separating the second layer and the third layer; a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer; a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer; a plurality of first connecting structures coupled to the first layer and the third layer; and a plurality of second connecting structures coupled to the second layer and the third layer, wherein the first pillars and the first connecting structures comprise a same material, the second pillars and the second connecting structures comprise a same material and the first pillars are misaligned with the second pillars. 18. The MEMS device of claim 17 , wherein the first layer has a first movable portion and a first anchor portion, and the second layer has a second movable portion and a second anchor portion. 19. The MEMS device of claim 18 , wherein the first pillars are in contact with the first movable portion, the first connecting structures are in contact with the first anchor portion, the second pillars are in contact with the second movable portion, and the second connecting structure are in contact with the second anchor portion. 20. The MEMS device of claim 18 , wherein the first layer further comprises at least a first hole formed in the first movable portion, the second layer further comprises a plurality of second holes, each of the second holes is formed between the second anchor portion and the second pillars, and the third layer further comprises a plurality of third holes.

Assignees

Inventors

Classifications

  • B81B3/0051Primary

    For defining the movement, i.e. structures that guide or limit the movement of an element (mechanical arrangements for preventing or damping vibration or shock H01H3/60) · CPC title

  • Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor {(manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182)} · CPC title

  • Microphones or microspeakers · CPC title

  • B81B7/0061Primary

    suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound · CPC title

  • For controlling stiffness, e.g. ribs · CPC title

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What does patent US10865099B2 cover?
A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the thir…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification B81B3/0051. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Dec 15 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).