Ion insertion battery electrode and method of fabricating same

Patent metadata

Field	Value
Publication number	US-10862101-B2
Application number	US-201916238455-A
Country	US
Kind code	B2
Filing date	Jan 2, 2019
Priority date	Jul 4, 2016
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

The disclosed technology relates to electrode layers of ion insertion type batteries and to electrode layer materials, wherein the electrode layer materials have a good electronic conductivity and a good ion conductivity, and wherein the electrode layers offer a good rate performance and a high storage capacity. The disclosed technology further relates to ion insertion type battery cells and batteries including such electrode layers, e.g., as an anode. The disclosed technology further relates to methods of forming such electrode layers and to methods for fabricating ion insertion type battery cells and batteries. The electrode layers according to the disclosed technology comprise titanium oxide comprising chlorine and may be deposited by atomic layer deposition at temperatures lower than 150° C.

First claim

What is claimed is:

1. A negative electrode of an ion insertion battery cell comprising a negative electrode layer, wherein the negative electrode layer comprises a material formed of titanium oxide comprising chlorine, wherein the titanium oxide comprising chlorine comprises an amorphous titanium oxide comprising chlorine or a mixture comprising the amorphous titanium oxide comprising chlorine and a crystalline titanium oxide comprising chlorine.

2. The negative electrode according to claim 1 , wherein a ratio of chlorine to titanium in the negative electrode layer is from 0.01 to 0.1, when measured by Rutherford backscattering spectrometry.

3. The negative electrode according to claim 2 , wherein the ratio of chlorine to titanium in the negative electrode layer is from 0.06 to 0.09.

4. The negative electrode according to claim 1 , wherein the titanium oxide comprising chlorine has the formula TiO 2-y Cl y , wherein y is from 0.01 to 0.1.

5. The negative electrode according to claim 4 , wherein the y is from 0.06 to 0.09.

6. The negative electrode according to claim 1 , wherein the negative electrode layer has a thickness between 5 nm and 2 μm.

7. The negative electrode according to claim 1 , wherein the negative electrode layer is a thin-film electrode layer.

8. The negative electrode according to claim 1 , wherein the negative electrode layer is a particle-based electrode layer.

9. An ion insertion battery cell comprising the negative electrode according to claim 1 .

10. An ion insertion battery comprising at least one of the ion insertion battery cell according to claim 9 .

11. A method of forming a negative electrode of an ion insertion battery cell, the method comprising:
depositing a thin film of titanium oxide comprising chloride on a substrate by an atomic layer deposition process using TiCl 4 and H 2 O as precursors at a deposition temperature between 50° C. and 150° C., wherein depositing is such that the titanium oxide comprising chlorine comprises an amorphous titanium oxide comprising chlorine or a mixture comprising the amorphous titanium oxide comprising chlorine and a crystalline titanium oxide comprising chlorine.

12. The method according to claim 11 , wherein depositing the thin film of titanium oxide comprises depositing the thin film on a non-planar substrate.

13. A method of fabricating an ion insertion battery cell, wherein the method comprises forming the negative electrode according to the method of claim 11 .

14. The method according to claim 13 , wherein forming the negative electrode comprises depositing the thin film titanium oxide comprising chlorine on a layer stack comprising a positive electrode layer and an electrolyte layer.

15. A method for fabricating an ion insertion battery comprising at least one ion insertion battery cell, the method comprising fabricating the ion insertion battery cell according to the method of claim 13 .

16. The method according to claim 14 , wherein the electrolyte layer comprises one or both of LiPON and Li 2 S—P 2 S 5 .

17. The method according to claim 11 , wherein the deposition temperature is in the range between 50° C. and 130° C.

18. The method according to claim 11 , further comprising annealing the titanium oxide comprising chlorine at about 300° C. to transform the thin film into a crystalline state.

19. The method according to claim 11 , wherein the titanium oxide comprising chlorine is amorphous, and the amorphous titanium oxide comprising chlorine does not crystallize.

20. The method according to claim 11 , wherein depositing the thin film of titanium oxide comprising chloride comprises spatially separating exposures of the substrate to different precursors by moving the substrate between spatially separated different zones for the different exposures.

Assignees

• Imec Vzw
• Univ Leuven Kath
• TNO
• Nedarlandse Organisatie Voor Toegepast Natuurwetenschappelijk Onderzoek Tno

Inventors

• Moitzheim Sebastien
• Vereecken Philippe
• Poodt Paul
• Balder Joan Elisabeth

Classifications

• H01M4/13915

  containing halogen atoms, e.g. LiCoOxFy · CPC title

• H01M4/0428

  Chemical vapour deposition · CPC title

• H01M10/0562

  Solid materials · CPC title

• H01M4/1315 Primary

  containing halogen atoms, e.g. LiCoOxFy · CPC title

• H01M4/0407 Primary

  by coating on an electrolyte layer · CPC title