Light emitting device

Patent metadata

Field	Value
Publication number	US-10862006-B2
Application number	US-201916536691-A
Country	US
Kind code	B2
Filing date	Aug 9, 2019
Priority date	Aug 17, 2018
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

A light emitting device including first, second, and third light emitting parts disposed one over another and each including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first adhesion layer disposed between the first and second light emitting parts and including first coupling patterns that are adhesive and conductive, and a second adhesion layer disposed between the second and third light emitting parts and including second coupling patterns that are adhesive and conductive, in which the third light emitting part has a mesa structure exposing a portion of the second coupling patterns of the second adhesion layer.

First claim

What is claimed is:

1. A light emitting device comprising:
a first light emitting part including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode;
a second light emitting part disposed over the first light emitting part and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode;
a third light emitting part disposed over the second light emitting part and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode;
a first adhesion layer disposed between the first and second light emitting parts and including first coupling patterns that are adhesive and conductive; and
a second adhesion layer disposed between the second and third light emitting parts and including second coupling patterns that are adhesive and conductive,
wherein the third light emitting part has a mesa structure exposing a portion of the second coupling patterns of the second adhesion layer.

2. The light emitting device according to claim 1 , further comprising:
a common electrode pad electrically connected to the first, second, and third transparent electrodes;
a first electrode pad electrically connected to the first n-type semiconductor layer;
a second electrode pad electrically connected to the second n-type semiconductor layer; and
a third electrode pad disposed at one corner of the light emitting device and electrically connected to the third n-type semiconductor layer.

3. The light emitting device according to claim 2 , wherein:
each of the first and second light emitting parts has a substantially quadrangular shape including first, second, third, and fourth corners respectively corresponding to first, second, third, and fourth corners of the light emitting device, and
the third light emitting part has a substantially quadrangular shape, the third light emitting part having cut portions in areas that correspond to the second and third corners of the light emitting device.

4. The light emitting device according to claim 3 , wherein:
the first electrode pad is disposed between a first outer sidewall of the third light emitting part and an outer sidewall of the second light emitting part; and
the second electrode pad is disposed between a second outer sidewall of the third light emitting part and a second outer sidewall of the second light emitting part.

5. The light emitting device according to claim 3 , wherein a length of the third light emitting part between the cut portions is shorter than a length of the third light emitting part between two opposing corners of the third light emitting part that correspond to the first and fourth corners of the light emitting device.

6. The light emitting device according to claim 2 , wherein the second coupling patterns are exposed by the third light emitting part in areas that correspond to the second and third corners of the light emitting device.

7. The light emitting device according to claim 2 , further comprising:
a first through structure electrically coupling the first, second, and third transparent electrodes with the common electrode pad;
a second through structure electrically coupling the first n-type semiconductor layer and the first electrode pad; and
a third through structure electrically coupling the second n-type semiconductor layer and the second electrode pad.

8. The light emitting device according to claim 7 , wherein the first through structure comprises:
a first through pattern electrically coupling the first transparent electrode and the first coupling pattern;
a second through pattern electrically coupling the second transparent electrode and the second coupling pattern; and
a third through pattern electrically coupling the third transparent electrode and the common electrode pad.

9. The light emitting device according to claim 8 , wherein:
the first through structure further comprises a fourth through pattern electrically coupling the second coupling pattern and the third transparent electrode;
the second coupling pattern is disposed between the second and fourth through patterns to electrically couples the second and fourth through patterns; and
the first coupling pattern is disposed between the first through pattern and the second transparent electrode to electrically couple the first through pattern and the second transparent electrode.

10. The light emitting device according to claim 8 , further comprising:
a first insulation layer surrounding an outer sidewall of the second through pattern and extending onto the second n-type semiconductor layer; and
a second insulation layer surrounding an outer sidewall of the third through pattern.

11. The light emitting device according to claim 8 , wherein:
the first through pattern comprises an upper portion wider than a lower portion thereof; and
the first coupling pattern is connected to the upper portion.

12. The light emitting device according to claim 7 , wherein the second through structure comprises:
a first through pattern electrically coupling the first n-type semiconductor layer and a first coupling pattern;
a second through pattern electrically coupling the first coupling pattern and a second coupling pattern; and
a third through pattern electrically coupling the second coupling pattern and the first electrode pad.

13. The light emitting device according to claim 12 , wherein the third through pattern is disposed between an outer sidewall of the second light emitting part and an outer sidewall of the third light emitting part.

14. The light emitting device according to claim 12 , further comprising a passivation layer disposed over the second coupling pattern and surrounding the third through pattern, and having a top surface which is coplanar with a top surface of the third n-type semiconductor layer.

15. The light emitting device according to claim 12 , wherein:
the first coupling pattern comprises an extension extended toward an outside of the first through pattern; and
the second through pattern is connected to the extension of the first coupling pattern.

16. The light emitting device according to claim 12 , wherein a first vertical central axis crossing a center of the first through pattern is laterally spaced apart from a second vertical central axis crossing a center of the second through pattern.

17. The light emitting device according to claim 7 , wherein the third through structure comprises:
a first through pattern electrically coupling the third n-type semiconductor layer and a second coupling pattern; and
a second through pattern electrically coupling the second coupling pattern and the second electrode pad.

18. The light emitting device according to claim 17 , wherein the second through pattern is disposed between an outer sidewall of the third light emitting part and an outer sidewall of the second light emitting part.

19. The light emitting device according to claim 18 , further comprising a passivation layer surrounding the second through pattern over the second coupling pattern and having a top surface which is coplanar with a top surface of the third n-type semiconductor layer.

20. The light emitting device according to claim 1 , wherein the first coupling pattern is disposed at the same elevation as the first adhesion layer, and the second coupling pattern is disposed at the same elevation as the second adhesion la

Assignees

• Seoul Viosys Co Ltd

Inventors

• Jang Jong Min
• Kim Chang Yeon

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/81

  Bodies · CPC title