Ferroelectric strain based phase-change device
US-2019378977-A1 · Dec 12, 2019 · US
Fast topological switch using strained Weyl semimetals
US10861995B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10861995-B2 |
| Application number | US-201916559331-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 3, 2019 |
| Priority date | Sep 4, 2018 |
| Publication date | Dec 8, 2020 |
| Grant date | Dec 8, 2020 |
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Abstract
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A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.
First claim
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What is claimed is: 1. A method of operating a device, comprising: providing a film of a semimetal in a first topological phase; and inducing interlayer shear displacement of the semimetal within the film, wherein the interlayer shear displacement induces the semimetal to transition to a different, second topological phase, wherein inducing the interlayer shear displacement includes emitting a set of pulses towards the film, the set of pulses having a field strength of 200 kV/cm or greater in the form of light pulses or electrical pulses. 2. The method of claim 1 , wherein the semimetal is a Weyl semimetal. 3. The method of claim 1 , wherein the semimetal is WTe 2 , MoTe 2 , or Mo 1-x W x Te 2 with x<1. 4. The method of claim 1 , wherein the set of light pulses have a terahertz frequency. 5. The method of claim 1 , wherein the set of light pulses have an infrared wavelength or a visible wavelength. 6. The method of claim 1 , wherein the set of light pulses have a field strength of 1 MV/cm or greater. 7. The method of claim 1 , wherein the interlayer shear displacement has a frequency in a range 0.1 terahertz to 10 terahertz. 8. The method of claim 1 , wherein the transition of the semimetal is associated with a symmetry change between a non-centrosymmetric structure and a centrosymmetric structure. 9. A device comprising: a film of a semimetal; and a light source optically coupled to the film and configured to emit a set of light pulses having a field strength of 200 kV/cm or greater, and that is sufficient to induce interlayer shear displacement of the semimetal within the film. 10. The device of claim 9 , wherein the interlayer shear displacement induces the semimetal to transition between a first topological phase and a different, second topological phase. 11. The device of claim 9 , further comprising a substrate, and the film is disposed over the substrate. 12. The device of claim 9 , further comprising a pair of electrodes, and the film is coupled between the pair of electrodes. 13. The device of claim 9 , further comprising a collimator optically coupled between the light source and the film. 14. The device of claim 9 , wherein the semimetal is a Weyl semimetal. 15. The device of claim 9 , wherein the semimetal is WTe 2 , MoTe 2 , or Mo 1-x W x Te 2 with x<1. 16. The device of claim 9 , wherein the light source is a pulsed, terahertz light source. 17. The device of claim 9 , wherein the semimetal is WTe 2 .
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- What does patent US10861995B2 cover?
- A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.
- Who is the assignee on this patent?
- Univ Leland Stanford Junior
- What technology area does this patent fall under?
- Primary CPC classification H10F30/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 08 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).