Semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10861941-B2
Application number	US-201916286648-A
Country	US
Kind code	B2
Filing date	Feb 27, 2019
Priority date	Aug 31, 2018
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

According to an embodiment, in a semiconductor device, a total value of a change amount of chemical potential of the semiconductor device with respect to a expansion direction of a stacking fault and the stacking fault energy of the stacking fault is zero or more.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a support substrate;
a semiconductor film provided on a first surface of the support substrate;
a lower electrode provided on a second surface of the support substrate that is opposite to the first surface; and
an upper electrode provided on a surface opposite to a surface contacting the support substrate in the semiconductor film,
wherein
the support substrate includes a trench opening on the second surface and extending from the second surface toward the semiconductor film,
the trench includes a plurality of trenches arrayed at an interval along the second surface and the interval is less than a length of the expansion direction of a stacking fault, and
a total value of: a change amount of chemical potential of the semiconductor device with respect to an expansion direction of the stacking fault, and stacking fault energy of the stacking fault, is zero or more.

2. The device according to claim 1 , wherein a partial region of a basal surface inside the trench is positioned in the semiconductor film and separate from an interface between the semiconductor film and the support substrate.

3. The device according to claim 1 , wherein the trench is filled with the lower electrode.

4. A semiconductor device, comprising:
a support substrate;
a semiconductor film provided on a first surface of the support substrate;
a lower electrode provided on a second surface of the support substrate that is opposite to the first surface; and
an upper electrode provided on a surface opposite to a surface contacting the support substrate in the semiconductor film,
wherein
the support substrate includes a trench opening on the second surface and extending from the second surface toward the semiconductor film,
the trench is arranged to extend in a direction along the second surface and the direction in which the trench extends is a direction crossing the expansion direction of a stacking fault, and
a total value of: a change amount of chemical potential of the semiconductor device with respect to an expansion direction of the stacking fault, and stacking fault energy of the stacking fault, is zero or more.

5. The device according to claim 4 , wherein a partial region of a basal surface inside the trench is positioned in the semiconductor film and separate from an interface between the semiconductor film and the support substrate.

6. The device according to claim 4 , wherein the trench is filled with the lower electrode.

7. A semiconductor device comprising:
a support substrate;
a semiconductor film provided on a first surface of the support substrate;
a lower electrode provided on a second surface of the support substrate that is opposite to the first surface; and
an upper electrode provided on a surface opposite to a surface contacting the support substrate in the semiconductor film, wherein
an impurity concentration or a thickness of the support substrate or the semiconductor film satisfies a condition that a total value of: a change amount of chemical potential of the semiconductor device with respect to an expansion direction of a stacking fault, and stacking fault energy of the stacking fault, is zero or more, and
the chemical potential of the semiconductor device represents a sum of respective chemical potentials of the support substrate and the semiconductor film.

Assignees

• Toshiba Kk

Inventors

• Kano Akira
• Goryu Akihiro
• Hirohata Kenji

Classifications

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2904 Primary

  Silicon carbide · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10D8/01

  Manufacture or treatment · CPC title

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title