Electro-optical device and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10859882-B2
Application number	US-201916392753-A
Country	US
Kind code	B2
Filing date	Apr 24, 2019
Priority date	Apr 25, 2018
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

A liquid crystal apparatus as an electro-optical device includes a TFT including a semiconductor layer and a gate electrode, a scan line electrically connected to the gate electrode and provided in a layer different from a layer where the gate electrode is provided, a capacitance line, and a conductive light shielding film electrically connected to the capacitance line. The light shielding film is provided in a layer between the gate electrode and the scan line, and in a plan view, overlaps with at least a part of a low-concentration drain region of the semiconductor layer.

First claim

What is claimed is:

1. An electro-optical device, comprising:
a transistor including a semiconductor layer and a gate electrode;
a gate wiring electrically connected to the gate electrode and provided in a layer different from a layer where the gate electrode is provided, the gate wiring being supplied with scan signals;
a constant potential wiring;
a first interlayer insulating film and a second interlayer insulating film provided between the gate electrode and the gate wiring; and
a conductive light shielding film electrically connected to the constant potential wiring, a constant potential being applied to the conductive light shielding film, wherein
the light shielding film is provided in a layer between the gate electrode and the gate wiring, and in a plan view, overlaps with at least a part of a low-concentration drain region of the semiconductor layer, and includes an opening portion at a position overlapping with the gate electrode,
the opening portion overlaps with a channel region of the semiconductor layer, and
the opening portion is provided with a contact hole that penetrates the first interlayer insulating film and the second interlayer insulating film and is formed to fill with a conductive film, the contact hole being electrically coupled to the gate electrode, and the contact hole electrically connecting the gate electrode and the gate wiring.

2. The electro-optical device according to claim 1 , wherein
in the plan view, the light shielding film overlaps with at least a part of a boundary between the low-concentration drain region and the gate electrode.

3. The electro-optical device according to claim 1 , wherein
in the plan view, the opening portion is surrounded by the light shielding film.

4. The electro-optical device according to claim 1 , wherein
the light shielding film overlaps with the channel region of the semiconductor layer in the plan view,
the gate wiring includes a first gate wiring and a second gate wiring provided in a layer above the first gate wiring,
the first gate wiring and the second gate wiring are electrically connected to the gate electrode through a contact hole provided in a projection of the first gate wiring,
the projection does not overlap with the light shielding film in the plan view, and
the transistor and the light shielding film are provided in a layer between the first gate wiring and the second gate wiring.

5. The electro-optical device according to claim 1 , wherein
the constant potential wiring is provided in a layer below and a layer above a layer where the transistor is provided, and
the light shielding film and the constant potential wiring are electrically connected through a contact hole.

6. The electro-optical device according to claim 5 , wherein
in the plan view, the contact hole is provided on both sides interposing the low-concentration drain region.

7. The electro-optical device according to claim 5 , wherein
a pixel electrode and a common electrode corresponding to the pixel electrode are provided, and
a potential different from a potential applied to the common electrode is applied to the constant potential wiring.

8. The electro-optical device according to claim 1 , wherein
a potential, different from a potential of any of the gate electrode and the source region and the drain region of the semiconductor layer, is applied to the light shielding film.

9. An electronic apparatus comprising the electro-optical device according to claim 1 .

Assignees

• Seiko Epson Corp

Inventors

• Nimura Toru
• Oikawa Hiroyuki
• Fujikawa Shinsuke

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10D86/0223

  comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials · CPC title