Electro-optic modulator device, optical device and method of making an optical device

Patent metadata

Field	Value
Publication number	US-10859860-B2
Application number	US-201816222977-A
Country	US
Kind code	B2
Filing date	Dec 17, 2018
Priority date	Nov 26, 2013
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region.

First claim

What is claimed is:

1. An optical device comprising:
base conductive layers lines forming an opening therebetween;
an anti-reflective coating region extending over the opening;
a modulation region over the anti-reflective coating region, the modulation region including:
a first doped region on the anti-reflective coating region,
an intrinsic region on the first doped region, and
a second doped region on the intrinsic region;

a reflecting region over the modulation region;
a first conductive line extending through the reflecting region and connected to the first doped region; and
a second conductive line extending through the reflecting region and connected to the second doped region.

2. The optical device of claim 1 , further comprising a first conductive layer electrically connected to the first conductive line and a second conductive layer electrically connected to the second conductive line, and wherein the first conductive layer and the second conductive layer form a second opening therebetween, the second opening having a diameter larger than the diameter of the opening.

3. The optical device of claim 1 , wherein the first conductive line is a metal-filled via.

4. The optical device of claim 1 , wherein the modulation region comprises Si, Ge or SiGe.

5. The optical device of claim 1 , wherein the modulation region comprises at least one quantum well.

6. The optical device of claim 1 , further comprising:
a laser aligned to the opening, the laser including:
an active semiconductor region sandwiched between a second reflecting region and a third reflecting region.

7. The optical device of claim 6 , wherein the laser is configured to generate a light, and the optical device is configured to output a modulated light responsive to the light generated by the laser.

8. The optical device of claim 6 , wherein the laser further comprises:
a third conductive line connected to second reflecting region;
a fourth conductive line connected to the third reflecting region; and
a third conductive layer electrically connected to the third conductive line and a fourth conductive layer electrically connected to the fourth conductive line, and wherein the third conductive layer and the fourth conductive layer form a third opening therebetween, the third opening being aligned to the opening.

9. An optical device comprising:
a laser including:
an active semiconductor region sandwiched between a first reflecting region and a second reflecting region;
a passivation layer surrounding the active semiconductor region and the second reflecting region; and
a conductive structure extending over the passivation layer and defining an output opening; and

an electro-optic modulator comprising:
an input opening aligned to the output opening;
an anti-reflecting region over the input opening;
a modulation region over the anti-reflecting region, the modulation region comprising a first doped region and a second doped region; and
a third reflecting region over the modulation region.

10. The optical device of claim 9 , wherein the output opening is defined by a third conductive layer and a fourth conductive layer of the laser and further comprising a second output opening, wherein the second output opening is defined by a first base conductive line and a second base conductive line of the electro-optic modulator.

11. The optical device of claim 10 , further comprising:
a first conductive line electrically connecting a first conductive layer to the first doped region;
a second conductive line electrically connecting a second conductive layer to the second doped region;
a third conductive line electrically connecting the third conductive layer to the first reflecting region; and
a fourth conductive line electrically connecting the fourth conductive layer to the second reflecting region.

12. The optical device of claim 11 , further comprising:
a gap between the laser and the electro-optic modulator, the gap being at least partially filled with an insulating material.

13. The optical device of claim 12 , wherein:
the first base conductive line is aligned to and electrically bonded to the third conductive layer; and
the second base conductive line is aligned to and electrically bonded with the fourth conductive layer.

14. The optical device of claim 12 , wherein the insulating material extends at least partly between the first base conductive line and the third conductive layer, and further extends at least partly between the second base conductive line and the fourth conductive layer.

15. The optical device of claim 9 , wherein the first doped region is doped with a first dopant type and the second doped region is doped with a second dopant type of opposite polarity to that of the first dopant type.

16. The optical device of claim 9 , wherein the modulation region includes one or more quantum wells.

17. An optical device comprising:
an electro-optic modulator, including:
a first opening between a first base conductive line and a second base conductive line;
an anti-reflective coating region over the first opening, the first base conductive line, and the second base conductive line;
a modulation region over the anti-reflective coating region, the modulation region comprising a first doped region and a second doped region;
a reflecting region over the modulation region;
a first conductive line connected to the first doped region, wherein the first conductive line extends through the reflecting region;
a second conductive line connected to the second doped region;
a first conductive layer over the first conductive line;
a second conductive layer over the second conductive line; and
a second opening between the first conductive layer and the second conductive layer; and

a laser, including:
a third opening aligned to the first opening, the third opening being between a third conductive layer and a fourth conductive layer;
a semiconductor region over a second reflecting region; and
a third reflecting region over the semiconductor region.

18. The optical device of claim 17 , further comprising a solder connector between the first base conductive line and the third conductive layer and a second solder connector between the second base conductive line and the fourth conductive layer.

19. The optical device of claim 17 wherein the first conductive line is a metal-filled via extending through the modulation region.

20. The optical device of claim 17 , wherein the laser is configured to generate a light, and the electro-optic modulator is configured to output a modulated light responsive to the light generated by the laser.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lee Wan-Yu
• Kuo Ying-Hao

Classifications

• H01S5/18302

  comprising an integrated optical modulator · CPC title

• G02F2201/38

  Anti-reflection arrangements · CPC title

• G02F2201/307

  Reflective grating, i.e. Bragg grating · CPC title

• G02F2201/34

  reflector · CPC title

• G02F1/01716

  Optically controlled superlattice or quantum well devices · CPC title