Thermal transistor

US10859329B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10859329-B2
Application numberUS-201816231991-A
CountryUS
Kind codeB2
Filing dateDec 25, 2018
Priority dateDec 28, 2017
Publication dateDec 8, 2020
Grant dateDec 8, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A thermal transistor is provided. The thermal transistor includes a metallic thermal conductor, a non-metallic thermal conductor, and a thermal resistance adjusting unit. The metallic thermal conductor and the non-metallic thermal conductor are contact with each other to form a thermal interface. The thermal resistance adjusting unit is configured to generate an electric field at the thermal interface.

First claim

Opening claim text (preview).

What is claimed is: 1. A thermal transistor, comprising: a metallic thermal conductor, a non-metallic thermal conductor, and a thermal resistance adjusting unit; the metallic thermal conductor and the non-metallic thermal conductor are in contact with each other to form a thermal interface; wherein a material of the non-metallic thermal conductor is carbon nanotubes, graphene, carbon fibers, or a combination thereof; and the thermal resistance adjusting unit is configured to generate an electric field at the thermal interface. 2. The thermal transistor of claim 1 , wherein a thickness of the metallic thermal conductor ranges from 0.1 mm to 1 mm. 3. The thermal transistor of claim 1 , wherein a material of the metallic thermal conductor is selected from the group consisting of copper, aluminum, iron, gold, silver, and alloy thereof. 4. The thermal transistor of claim 1 , wherein the non-metallic thermal conductor is made of electrical conductive material. 5. The thermal transistor of claim 1 , wherein the non-metallic thermal conductor is a buckypaper with a density ranging from 1.2 g/cm3 to 1.3 g/cm3. 6. The thermal transistor of claim 1 , wherein the metallic thermal conductor and the non-metallic thermal conductor are disposed in a sealed space. 7. The thermal transistor of claim 1 , wherein the metallic thermal conductor and the non-metallic thermal conductor are disposed in a vacuum environment. 8. The thermal transistor of claim 1 , wherein the thermal resistance adjusting unit comprises: a first plate and a second plate parallel to and spaced apart from the first plate, both the first plate and the second plate are electrical conductive plate; and the metallic thermal conductor and the non-metallic thermal conductor are disposed between the first plate and the second plate. 9. The thermal transistor of claim 8 , wherein the thermal resistance adjusting unit further comprises: a voltage source electrically connected to each of the first plate and the second plate; the voltage source is configured to control electric potentials between the first plate and the second plate. 10. The thermal transistor of claim 8 , wherein the thermal resistance adjusting unit further comprises: an angle adjusting unit electrically connected to each of the first plate and the second plate; the angle adjusting unit is configured to control an angle between the thermal interface and the first plate. 11. The thermal transistor of claim 8 , wherein the thermal resistance adjusting unit further comprises a memory storing a mapping table of electric field-interfacial thermal resistance. 12. The thermal transistor of claim 1 , wherein the metallic thermal conductor comprises a first surface and a second surface; the non-metallic thermal conductor comprises a third surface and a fourth surface; the first surface and the third surface are in direct contact with each other to form the thermal interface. 13. The thermal transistor of claim 12 , wherein each of the second surface and the fourth surface is thermally connected to a heat source or a thermal device by a thermal connection.

Assignees

Inventors

Classifications

  • characterised by their materials · CPC title

  • Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

  • F28F13/16Primary

    by applying an electrostatic field to the body of the heat-exchange medium · CPC title

  • composite, e.g. polymers with fillers or fibres · CPC title

  • with nanostructures · CPC title

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Frequently asked questions

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What does patent US10859329B2 cover?
A thermal transistor is provided. The thermal transistor includes a metallic thermal conductor, a non-metallic thermal conductor, and a thermal resistance adjusting unit. The metallic thermal conductor and the non-metallic thermal conductor are contact with each other to form a thermal interface. The thermal resistance adjusting unit is configured to generate an electric field at the thermal in…
Who is the assignee on this patent?
Univ Tsinghua, Hon Hai Prec Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification F28F13/16. Mapped technology areas include Mechanical Engineering.
When was this patent published?
Publication date Tue Dec 08 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).