Phase-change type vanadium oxide material and preparation method therefor

Patent metadata

Field	Value
Publication number	US-10858728-B2
Application number	US-201615755298-A
Country	US
Kind code	B2
Filing date	Jan 6, 2016
Priority date	Aug 24, 2015
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

A phase-transition type vanadium oxide material and a preparation method therefor. The preparation method includes the following steps: providing a vanadium oxide base material, and implanting gaseous ions into the vanadium oxide base material, to obtain a phase-transition type vanadium oxide material having a preset phase-transition temperature. Subsequently, optionally, further annealing may be performed to adjust a bubble generation status in vanadium oxide after the gaseous ions are implanted, to further adjust the stress and strain and the phase-transition temperature. The method for preparing a phase-transition type vanadium oxide material consistent with the present invention has simple steps, desirable process reproducibility, high flexibility, and the phase-transition temperature of vanadium oxide can be continuously adjusted by changing an implantation dosage of the gaseous ions. In addition, the present invention has desirable compatibility, and can be combined with other phase-transition temperature methods, to achieve a larger phase-transition temperature adjustment range.

First claim

What is claimed is:

1. A method for preparing a phase-transition vanadium oxide material, comprising the following steps:
providing a vanadium oxide base material, and implanting gaseous ions into the vanadium oxide base material, to obtain a phase-transition vanadium oxide material having a preset phase-transition temperature; wherein the gaseous ions form bubbles in the vanadium oxide base material, and the bubbles change the stress and strain condition inside the vanadium oxide base material.

2. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the gaseous ion comprises at least one of O, N, H, He, Ne, Ar, and Xe.

3. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the preset phase-transition temperature is regulated and controlled by adjusting an implantation dosage of the gaseous ions.

4. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the vanadium oxide base material is a thin film, a patterned nanostructure, or a block.

5. The method for preparing a phase-transition vanadium oxide material as in claim 4 , wherein after the gaseous ions are implanted into the vanadium oxide base material, to obtain the phase-transition vanadium oxide material having a preset phase-transition temperature, the phase-transition vanadium oxide material is ground into powder.

6. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the gaseous ions are implanted into the vanadium oxide base material by using a mask, to obtain the phase-transition vanadium oxide material having a preset phase-transition temperature in a local region of the vanadium oxide base material.

7. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the material of the vanadium oxide base material comprises VO 2 , VO, V 2 O 3 , or V 2 O 5 .

8. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the material of the vanadium oxide base material is pure phase vanadium oxide or doped vanadium oxide.

9. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the vanadium oxide base material is a vanadium dioxide thin film prepared on a substrate by using a magnetron sputtering method, an ion beam assisted deposition method, a chemical vapor deposition method, a vacuum thermal evaporation method, an electron beam evaporation method, a pulsed laser deposition method, or a solution-gel method.

10. The method for preparing a phase-transition vanadium oxide material as in claim 9 , wherein the substrate is quartz glass, ordinary glass, sapphire, a TiO 2 substrate, a mica plate, or a silicon wafer.

11. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein the vanadium oxide base material is a vanadium dioxide thin film, and in a process of preparing the vanadium dioxide thin film, a phase-transition temperature of the vanadium dioxide thin film is regulated and controlled in advance by doping a sputtering target or by changing an oxygen pressure in the preparation process.

12. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein after the gaseous ions are implanted into the vanadium oxide base material, to obtain the phase-transition vanadium oxide material having a preset phase-transition temperature, the phase-transition vanadium oxide material is further annealed.

13. The method for preparing a phase-transition vanadium oxide material as in claim 12 , wherein an annealing temperature range is 25° C. to 1000° C., and an annealing atmosphere comprises at least one of O 2 and Ar.

14. The method for preparing a phase-transition vanadium oxide material as in claim 1 , wherein a gaseous ion implantation energy range is 50 eV to 1 MeV, a gaseous ion implantation dosage range is 1E1 cm −2 to 1E20 cm −2 , and a gaseous ion implantation temperature range is −100° C. to 1000° C.

Assignees

• Shanghai Inst Microsystem & Information Tech Cas
• Shanghai Institute Of Microsystem And Information Tech Chinese Academy Of Science

Inventors

• Ou Xin
• Jia Qi
• Huang Kai
• Wang Xi

Classifications

• C23C14/083 Primary

  of refractory metals or yttrium · CPC title

• C23C14/042

  using masks · CPC title

• C23C14/5806

  Thermal treatment · CPC title

• C23C14/48

  Ion implantation · CPC title