Method and apparatus for producing a nanometer thick film of black phosphorus

Patent metadata

Field	Value
Publication number	US-10858253-B2
Application number	US-201816232425-A
Country	US
Kind code	B2
Filing date	Dec 26, 2018
Priority date	Dec 26, 2018
Publication date	Dec 8, 2020
Grant date	Dec 8, 2020

Abstract

A low pressure process for producing thin film crystalline black phosphorus on a substrate and a black phosphorus thin film made by the process. The process includes flowing a phosphorus-containing gas into a deposition chamber and depositing phosphorus from the phosphorus-containing gas onto the substrate in the chamber. The substrate is selected from (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from gold, tin, silver, copper and alloys of the foregoing metals. The substrate and phosphorus are heated to a temperature ranging from about 350° to less than about 500° C. to form a phosphorus intermediate composition. The substrate and intermediate composition are heated to a temperature of greater than 500° C. to less than about 1000° C. convert the metal phosphorus intermediate composition to the black phosphorus thin film.

First claim

The invention claimed is:

1. A low pressure process for producing thin film crystalline black phosphorus on a substrate comprising:
flowing a phosphorus-containing gas into a deposition chamber, wherein the phosphorus-containing gas is selected from the group consisting of phosphine, and alkyl-phosphine,
depositing phosphorus from the phosphorus-containing gas onto the substrate in the deposition chamber and heating the substrate and phosphorus to a temperature ranging from about 350° to less than about 500° C. to form a phosphorus intermediate composition, wherein the substrate is selected from the group consisting of (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from the group consisting of gold, tin, silver, copper and alloys of the foregoing metals,
heating the substrate and phosphorus intermediate composition to a temperature of greater than 500° C. to less than about 1000° C. convert the phosphorus intermediate composition to an orthorhombic black phosphorus thin film on the substrate.

2. The process of claim 1 , wherein the deposition chamber is a chemical vapor deposition chamber.

3. The process of claim 1 , wherein the phosphorus-containing gas is a di-phosphorus vapor.

4. The process of claim 1 , wherein the substrate is selected from the group consisting of a gold foil, a gold-tin alloy foil, and an insulating substrate containing a thin film layer of gold or gold-tin alloy.

5. The process of claim 1 , wherein the phosphorus intermediate composition is selected from the group consisting of Au 2 P 3 , Au 3 SnP 7 , Au 7 IP 10 , AgP 2 , CuP 2 .

6. A low pressure process for producing thin film crystalline black phosphorus on a substrate comprising:
flowing a phosphorus-containing gas into a deposition chamber,
depositing phosphorus from the phosphorus-containing gas onto the substrate in the deposition chamber and heating the substrate and phosphorus to a temperature ranging from about 350° to less than about 500° C. to form a phosphorus intermediate composition, wherein the substrate is selected from the group consisting of (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from the group consisting of gold, tin, silver, copper and alloys of the foregoing metals,
capping the phosphorus intermediate composition,
heating the substrate and phosphorus intermediate composition, in the presence of PH 3 and H 2 to a temperature of greater than 500° C. to less than about 1000° C. to convert the phosphorus intermediate composition to an orthorhombic black phosphorus thin film on the substrate.

7. The process of claim 6 , wherein the capping material is selected from the group consisting of sapphire, quartz, glass, silicon, Al 2 O 3 , HfO 2 , and SiO 2 .

8. A low pressure process for producing thin film crystalline black phosphorus on a substrate comprising:
depositing a metal phosphide on a substrate in a deposition chamber, wherein the metal phosphide is deposited using a process selected from the group consisting of evaporation, chemical vapor deposition and sputtering and wherein the metal is selected from the group consisting of gold, tin, silver, copper and alloys of the foregoing metals,
capping the metal phosphide with a non-reactive capping material,
heating the metal phosphide to a temperature of from above 500° C. to less than about 1000° C. to form thin film black phosphorus on the metal, and removing the capping material after the heating step.

9. The process of claim 8 , wherein the capping material is selected from the group consisting of sapphire, quartz, glass, silicon, Al 2 O 3 , HfO 2 , and SiO 2 .

10. A low pressure process for producing thin film crystalline black phosphorus on a substrate comprising:
heating the substrate to a temperature ranging from about 300° to about 500° C. in a deposition chamber,
generating a phosphorus-containing gas from a phosphorus source,
flowing the phosphorus-containing gas into the deposition chamber to form a phosphorus layer on the substrate,
capping the phosphorus layer on the substrate with an inert capping material,
heating the phosphorus layer to a temperature from above about 500° C. to less than about 1000° C. at a pressure of from about atmospheric pressure to about 100 mTorr to convert the phosphorus layer to an orthorhombic black phosphorus thin film on the substrate.

11. The process of claim 10 , wherein the capping material is selected from the group consisting of sapphire, quartz, glass, silicon, Al 2 O 3 , HfO 2 , and SiO 2 .

12. The process of claim 10 , wherein the phosphorus source is selected from the group consisting of red phosphorus, violet phosphorus, phosphine, alkyl-phosphine.

13. The process of claim 10 , wherein the substrate is selected from the group consisting of (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate, (ii) a substrate comprising a thin film of metal selected from the group consisting of gold, tin, silver, copper and alloys of the foregoing metals, and (iii) a wafer selected from silicon, glass, and ceramic.

Assignees

• Us Gov Air Force
• Us Air Force

Inventors

• Snure Michael R
• Weyburne David

Classifications

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title