Uv light emitting diode package and light emitting diode module having the same
US-2017288088-A1 · Oct 5, 2017 · US
US10856376B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10856376-B2 |
| Application number | US-201816184565-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 8, 2018 |
| Priority date | Jul 6, 2016 |
| Publication date | Dec 1, 2020 |
| Grant date | Dec 1, 2020 |
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A light emitting diode (LED) module may include a direct current (DC) voltage node formed on a first layer. The DC voltage node may be configured to sink a first current. One or more devices may be formed on the first layer configured to provide a second current to one or more LEDs. A device of the one or more devices may carry a steep slope voltage waveform. A local shielding area may be formed in a second layer directly below the DC voltage node and the one or more devices. The local shielding area may include a substantially continuous area of conductive material. A conductive via may extend through one or more layers. The conductive via may electrically connect the DC voltage node and the local shielding area.
Opening claim text (preview).
What is claimed is: 1. A light emitting diode (LED) module comprising: a direct current (DC) voltage node formed on a first layer, the DC voltage node configured to sink a first current; one or more devices formed on the first layer configured to provide a second current to one or more LEDs, wherein a device of the one or more devices carries a steep slope voltage waveform; a local shielding area formed in a second layer below at least a portion of the DC voltage node and the one or more devices, the local shielding area comprising a substantially continuous area of conductive material; and a conductive via extending through one or more layers, the conductive via electrically coupling the DC voltage node and the local shielding area. 2. The LED module of claim 1 , wherein the conductive via extends through an entire thickness of the first layer, an entire thickness of a first dielectric layer formed between the first layer and the second layer, and a portion of the second layer. 3. The LED module of claim 1 , wherein the second layer is formed on a second dielectric layer and the second dielectric layer is formed on a base metal substrate. 4. The LED module of claim 1 , wherein the local shielding area extends laterally beyond an outer edge of the DC voltage node and an outer edge of the device carrying the steep slope voltage waveform. 5. The LED module of claim 1 , wherein the device carrying the steep slope voltage waveform comprises a switching transistor that square wave voltage waveform from an AC voltage input. 6. A module comprising: a light emitting diode (LED) driver circuit comprising a switching circuit and a voltage node; a multilayer electronics board comprising a first layer electrically coupled to the switching circuit and the voltage node, a second layer including a local shielding area, and one or more dielectric layers; and a plated via extending from the local shielding area to the voltage node through at least the first layer and a first dielectric layer of the one or more dielectric layers. 7. The module of claim 6 , wherein the local shielding area comprises a continuous region of a conductive metal. 8. The module of claim 6 , wherein the voltage node is configured to provide an internal ground during operation of the LED driver circuit. 9. The module of claim 6 , wherein the multilayer electronics board further comprises a base layer, the base layer providing an attachment area to a heat sink. 10. The module of claim 6 , wherein the switching circuit comprises a single-stage boost converter circuit. 11. The module of claim 6 , wherein the local shielding area extends laterally in two directions below at least a portion of the LED driver circuit. 12. The module of claim 6 , wherein the switching circuit is configured to provide a square-wave voltage signal to an LED array. 13. The module of claim 6 , further comprising an LED array, the LED array electrically coupled to the LED driver circuit. 14. A method comprising: forming a light emitting diode (LED) driver circuit comprising a switching circuit and a voltage node; forming a multilayer electronics board comprising a first layer electrically coupled to the switching circuit and the voltage node, a second layer including a local shielding area, and one or more dielectric layers; and forming a plated via through at least the first layer and a first dielectric layer of the one or more dielectric layers, the plated via electrically coupling the voltage node and the local shielding area. 15. The method of claim 14 , wherein the local shielding area comprises a continuous region of a conductive metal. 16. The method of claim 14 , wherein the voltage node is configured to provide an internal ground during operation of the LED driver circuit. 17. The method of claim 14 , wherein the multilayer electronics board further comprises a base layer, the base layer providing an attachment area to a heat sink. 18. The method of claim 14 , wherein the switching circuit comprises a single-stage boost converter circuit. 19. The method of claim 14 , wherein the local shielding area extends laterally in two directions below at least a portion of the LED driver circuit. 20. The method of claim 14 , wherein the switching circuit is configured to provide a square-wave voltage signal to an LED array on the first layer.
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