Methods and compositions for enhancing processability and charge transport of polymer semiconductors

US10854819B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10854819-B2
Application numberUS-201816165938-A
CountryUS
Kind codeB2
Filing dateOct 19, 2018
Priority dateMay 26, 2015
Publication dateDec 1, 2020
Grant dateDec 1, 2020

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method of making a solid state semiconducting film. The method includes blending a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and fully conjugated semiconducting polymer. The resulting blend is subjected to a film making method to result is a semiconducting film. A solid state semiconducting film comprising a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and a fully conjugated semiconducting polymer, wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix. Devices made from these semiconductor films.

First claim

Opening claim text (preview).

The invention claimed is: 1. A device comprising: a solid state semiconducting film which includes a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone; and a fully conjugated semiconducting polymer, wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix, wherein the weight percent of the fully conjugated semiconducting polymer is in the range of 1.0 to 90.0 weight percent of blend of the fully conjugated semiconducting polymer and the non-conjugated semiconductor polymer matrix, wherein the non-conjugated polymer semiconductor is DPP-C3 or DPP-05, and the fully conjugated polymer semiconductor is DPP-C0. 2. The device of claim 1 , wherein the non-conjugated semiconducting polymer matrix containing crystalline aggregates comprises DPP-C3 and DPP-05, and the fully conjugated semiconducting polymer is DPP-C0. 3. An optoelectronic device comprising: a solid state semiconducting film which includes a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone and a fully conjugated semiconducting polymer; wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix, wherein the weight percent of the fully conjugated semiconducting polymer is in the range of 1.0 to 90.0 weight percent of blend of the fully conjugated semiconducting polymer and the non-conjugated semiconductor polymer matrix; wherein the non-conjugated polymer semiconductor is DPP-C3 or DPP-05, and the fully conjugated polymer semiconductor is DPP-C0. 4. A sensor comprising: a solid state semiconducting film which includes a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone and a fully conjugated semiconducting polymer; wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix; wherein the weight percent of the fully conjugated semiconducting polymer is in the range of 1.0 to 90.0 weight percent of blend of the fully conjugated semiconducting polymer and the non-conjugated semiconductor polymer matrix; wherein the non-conjugated polymer semiconductor is DPP-C3 or DPP-05, and the fully conjugated polymer semiconductor is DPP-C0; and wherein the sensor is capable of sensing a chemical parameter or a biological parameter.

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What does patent US10854819B2 cover?
A method of making a solid state semiconducting film. The method includes blending a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and fully conjugated semiconducting polymer. The resulting blend is subjected to a film making method to result is a semiconducting film. A solid state s…
Who is the assignee on this patent?
Purdue Research Foundation
What technology area does this patent fall under?
Primary CPC classification H01L51/0036. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 01 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).