Dyketopyrrolopyrrole polymers for use in organic semiconductor devices
US-9221943-B2 · Dec 29, 2015 · US
US10854819B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10854819-B2 |
| Application number | US-201816165938-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 19, 2018 |
| Priority date | May 26, 2015 |
| Publication date | Dec 1, 2020 |
| Grant date | Dec 1, 2020 |
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A method of making a solid state semiconducting film. The method includes blending a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and fully conjugated semiconducting polymer. The resulting blend is subjected to a film making method to result is a semiconducting film. A solid state semiconducting film comprising a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone, and a fully conjugated semiconducting polymer, wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix. Devices made from these semiconductor films.
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The invention claimed is: 1. A device comprising: a solid state semiconducting film which includes a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone; and a fully conjugated semiconducting polymer, wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix, wherein the weight percent of the fully conjugated semiconducting polymer is in the range of 1.0 to 90.0 weight percent of blend of the fully conjugated semiconducting polymer and the non-conjugated semiconductor polymer matrix, wherein the non-conjugated polymer semiconductor is DPP-C3 or DPP-05, and the fully conjugated polymer semiconductor is DPP-C0. 2. The device of claim 1 , wherein the non-conjugated semiconducting polymer matrix containing crystalline aggregates comprises DPP-C3 and DPP-05, and the fully conjugated semiconducting polymer is DPP-C0. 3. An optoelectronic device comprising: a solid state semiconducting film which includes a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone and a fully conjugated semiconducting polymer; wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix, wherein the weight percent of the fully conjugated semiconducting polymer is in the range of 1.0 to 90.0 weight percent of blend of the fully conjugated semiconducting polymer and the non-conjugated semiconductor polymer matrix; wherein the non-conjugated polymer semiconductor is DPP-C3 or DPP-05, and the fully conjugated polymer semiconductor is DPP-C0. 4. A sensor comprising: a solid state semiconducting film which includes a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone and a fully conjugated semiconducting polymer; wherein the fully conjugated semiconducting polymer serves as tie chains to bridge crystalline aggregates from the non-conjugated polymer matrix; wherein the weight percent of the fully conjugated semiconducting polymer is in the range of 1.0 to 90.0 weight percent of blend of the fully conjugated semiconducting polymer and the non-conjugated semiconductor polymer matrix; wherein the non-conjugated polymer semiconductor is DPP-C3 or DPP-05, and the fully conjugated polymer semiconductor is DPP-C0; and wherein the sensor is capable of sensing a chemical parameter or a biological parameter.
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