Power semiconductor device and power module

Patent metadata

Field	Value
Publication number	US-10854537-B2
Application number	US-201816124932-A
Country	US
Kind code	B2
Filing date	Sep 7, 2018
Priority date	Apr 11, 2018
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

Provided is a small-sized power semiconductor device in which interference between power modules adjacently disposed is prevented and the areas of the gaps occurring between the power modules are reduced. In a power semiconductor device formed by adjacently disposing power modules in an arc shape on a heat sink, each of which power modules is obtained by sealing, with a mold resin, a switchable power semiconductor chip, a lead frame in which potential leads and signal terminals connected to the power semiconductor chip are formed, and a metallic inner lead electrically connecting an upper surface electrode of the power semiconductor chip and the lead frame, any one of the adjacent power modules is formed in a pentagonal shape having, at a portion adjacent to the other power module, an oblique side 10a obtained by cutting out one corner of a quadrangle.

First claim

What is claimed is:

1. A power semiconductor device formed by adjacently disposing a plurality of power modules in along an arc on a heat sink, each power module being obtained by sealing, with a mold resin, a switchable power semiconductor chip, a lead frame in which a potential lead and a signal terminal connected to the power semiconductor chip are formed, and a metallic inner lead electrically connecting an upper surface electrode of the power semiconductor chip and the lead frame, wherein
any one of the adjacent power modules is formed in a pentagonal shape having, at a portion adjacent to the other power module, an oblique side obtained by cutting out one corner of a quadrangle, and
the signal terminal is disposed at a side corresponding to a radially outer peripheral side of each of the power modules with respect to a radius of the arc.

2. The power semiconductor device according to claim 1 , wherein the potential lead is disposed at a side corresponding to an inner peripheral side of each of the power modules.

3. The power semiconductor device according to claim 2 , wherein each of the power modules includes a bridge circuit for one phase, and the n power modules are disposed in an arc shape on a shared heat sink to form an n-phase bridge circuit.

4. The power semiconductor device according to claim 3 , wherein the mold resin is a transfer mold resin, and the power semiconductor chip, the lead frame, and the inner lead are over-molded therewith.

5. The power semiconductor device according to claim 2 , wherein the mold resin is a transfer mold resin, and the power semiconductor chip, the lead frame, and the inner lead are over-molded therewith.

6. The power semiconductor device according to claim 1 , wherein each of the power modules includes a bridge circuit for one phase, and the n power modules are disposed in an arc shape on a shared heat sink to form an n-phase bridge circuit.

7. The power semiconductor device according to claim 6 , wherein the mold resin is a transfer mold resin, and the power semiconductor chip, the lead frame, and the inner lead are over-molded therewith.

8. The power semiconductor device according to claim 1 , wherein the mold resin is a transfer mold resin, and the power semiconductor chip, the lead frame, and the inner lead are over-molded therewith.

9. A power module comprising:
a switchable power semiconductor chip;
a lead frame in which a potential lead and a signal terminal connected to the power semiconductor chip are formed;
a metallic inner lead electrically connecting an upper surface electrode of the power semiconductor chip and the lead frame;
a conductive joining member joining at least the lead frame and the inner lead together; and
a mold resin covering the power semiconductor chip, the lead frame, and the inner lead, wherein
an outer shape of the mold resin is formed as a pentagonal shape having an oblique side obtained by cutting out one corner of a quadrangle,
wherein the signal terminal is disposed at a long side opposing a short side connected to the oblique side.

10. The power module according to claim 9 , wherein the potential lead is disposed at the short side connected to the oblique side.

11. The power module according to claim 9 , wherein the mold resin is a transfer mold resin, and the power semiconductor chip, the lead frame, and the inner lead are over-molded therewith.

Assignees

• Mitsubishi Electric Corp

Inventors

• Tanaka Saburo
• Shimano Tomoaki
• Kato Masaki
• Tahara Jun
• Fukase Tatsuya

Classifications

• H10W72/07651

  characterised by changes in properties of the strap connectors during connecting · CPC title

• H10W72/60

  Strap connectors, e.g. thick copper clips for grounding of power devices · CPC title

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W90/00

  Package configurations · CPC title