Plasma generating device, plasma sputtering device, and plasma sputtering method

Patent metadata

Field	Value
Publication number	US-10854448-B2
Application number	US-201816482400-A
Country	US
Kind code	B2
Filing date	Jan 30, 2018
Priority date	Jan 31, 2017
Publication date	Dec 1, 2020
Grant date	Dec 1, 2020

Abstract

A plasma sputtering device including one or a plurality of plasma generating devices each including an insulating tube having an expanding inner diameter and having a gas injection port formed in an end portion or a side portion thereof, a first electromagnet or a permanent magnet group which can apply a static magnetic field, and a high frequency antenna; a second electromagnet which is disposed in a region downstream of the plasma generating device(s) and which can form a curved magnetic force line structure; a target mechanism which includes a permanent magnet embedded therein and a cooling mechanism and which can apply a DC or high frequency voltage; a substrate stage facing the target mechanism; a second permanent magnet group around the substrate stage; and a heat insulating mechanism between a target material and the target mechanism.

First claim

The invention claimed is:

1. A plasma sputtering method characterized in that one or a plurality of plasmas are generated by one or a plurality of plasma generating devices each having an insulating tube having an expanding inner diameter and having a gas injection port formed in an end portion or a side portion of the insulating tube, a first electromagnet or a permanent magnet member group which can apply a static magnetic field, and a high frequency antenna; and the plasma or plasmas are forced to flow into a vacuum chamber and reach a local region near a target by a curved magnetic field line structure formed by a second electromagnet disposed in a downstream region, whereby ions are taken into the target.

2. A plasma sputtering method according to claim 1 , wherein the temperature of the target is raised by ion energy which flows into a target member when the ions are taken into the target.

3. A plasma sputtering method according to claim 1 , wherein film formation is performed while entry of ion incident energy to a substrate stage facing a target mechanism is suppressed by a magnetic field line structure formed by a permanent magnet disposed near the substrate stage.

4. A plasma sputtering method according to claim 1 , wherein a substrate is disposed at a position at which the substrate does not interfere with the magnetic field line extending from the plasma generating device and curved toward the target or a position further away from the target than that position, whereby plasma damage to the substrate is suppressed.

5. A plasma sputtering method according to claim 1 , wherein the target has an area equal to or larger than that of the plasma generating device so as to prevent ion irradiation to members other than a target material.

6. A plasma sputtering device characterized by comprising:
one or a plurality of plasma generating devices each having an insulating tube having an expanding inner diameter and having a gas injection port formed in an end portion or a side portion of the insulating tube, a first electromagnet or a permanent magnet member group which can apply a static magnetic field, and a high frequency antenna;
a second electromagnet which is disposed in a region downstream of the plasma generating device and which forms a curved magnetic force line structure;
a target mechanism; and
a substrate stage facing the target mechanism.

7. A plasma sputtering device according to claim 6 , further comprising a permanent magnet which is embedded in the target mechanism and which can apply a DC or high frequency voltage.

8. A plasma sputtering device according to claim 6 , wherein the target mechanism includes a cooling mechanism.

9. A plasma sputtering device according to claim 6 , further comprising a heat insulating mechanism between a target material and the target mechanism.

10. A plasma sputtering device according to claim 6 , further comprising a second permanent magnet member group disposed around the substrate stage.

11. A plasma sputtering device according to claim 6 , wherein a substrate is disposed at a position at which the substrate does not interfere with the curved magnetic field line structure formed by the first electromagnet and the second electromagnet or the target mechanism including a permanent magnet embedded therein, or the substrate is disposed at a position further away from the target than that position.

12. A plasma sputtering device according to claim 6 , wherein the target has an area equal to or larger than that of the plasma generating device so as to prevent ion irradiation to members other than the target.

13. A plasma sputtering device according to claim 6 , wherein the first electromagnet or a first permanent magnet member group can apply a static magnetic field extending in the longitudinal direction of the insulating tube;
which plasma sputtering device comprising a high frequency electric power supply device whose frequency band is 2 MHz to 100 MHz, and an inductively coupled high frequency antenna is disposed around the insulating tube.

14. A plasma sputtering device according to claim 10 , wherein the second permanent magnet member group around the substrate stage is a permanent magnet member group which can apply a static magnetic field extending parallel to a surface of the substrate.

15. A plasma sputtering device according to claim 6 , further comprising means for changing excitation current of the second electromagnet as a function of time.

16. A plasma generating device characterized by comprising:
an insulating tube having an expanding inner diameter and having a gas injection port formed in an end portion or a side portion of the insulating tube;
a first electromagnet or a first permanent magnet member group which can apply a static magnetic field of the insulating tube;
a high frequency electric power supply device whose frequency band is 2 MHz to 100 MHz; and
an inductively coupled high frequency antenna disposed around the insulating tube.

Assignees

• Univ Tohoku

Inventors

• Takahashi Kazunori
• Fukushima Jun
• Ando Akira
• Sasaki Yasumasa

Classifications

• H10P14/22 Primary

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H01J37/3266 Primary

  Magnetic control means · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• H01J37/32724

  Temperature · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title