Apparatus and methods for improving defect detection sensitivity
US-9194811-B1 · Nov 24, 2015 · US
US10852246B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10852246-B2 |
| Application number | US-201716305982-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 1, 2017 |
| Priority date | Jun 2, 2016 |
| Publication date | Dec 1, 2020 |
| Grant date | Dec 1, 2020 |
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According to an aspect of the present invention, there is provided a pattern structure inspection method including irradiating a wave from a wave source onto a sample including a pattern region in which a structure having a certain pattern is provided on a substrate, collecting speckle data generated due to multiple scattering of the wave in the pattern region, by using a data collector, and analyzing whether the structure of the pattern region has a defect, by comparing the collected speckle data to reference speckle data.
Opening claim text (preview).
What is claimed is: 1. A pattern structure inspection apparatus comprising: a wave source for irradiating a wave onto a sample comprising a pattern region in which a structure having a certain pattern is provided on a substrate; a data collector for collecting speckle data generated due to multiple scattering of the irradiated wave by the sample; a data analyzer for receiving and analyzing the speckle data collected by the data collector, and outputting an analysis result on a display; and a multiple scattering amplifier for amplifying a number of times that the wave is multiple-scattered in the sample, by reflecting at least some waves multiple-scattered and emitted from the sample, back to the sample, wherein the multiple scattering amplifier comprises: a first multiple scattering amplifier located on an extension line passing through a center of the sample, to reflect at least some waves multiple-scattered and emitted from the sample, back to the sample; and a second multiple scattering amplifier located at an opposite side of the first multiple scattering amplifier with respect to the sample, to reflect at least some waves multiple-scattered and emitted from the sample, back to the sample, wherein the data collector collects the speckle data in an area between the sample and the data collector or in an internal area of the data collector. 2. The pattern structure inspection apparatus of claim 1 , wherein the data collector collects the speckle data in a first area spaced apart from a surface of the sample by a certain distance. 3. The pattern structure inspection apparatus of claim 2 , wherein the first area is located between a first surface comprising a first point spaced apart from the surface of the sample by a first distance, and a second surface comprising a second point spaced apart from the surface of the sample by a second distance greater than the first distance. 4. The pattern structure inspection apparatus of claim 1 , further comprising a three-dimensional (3D) image generator for generating a 3D speckle image by using a plurality of speckle signals detected by a plurality of data collectors, when the data collector comprises the plurality of data collectors, wherein the controller analyzes characteristics of the sample by using the 3D speckle image. 5. A pattern structure inspection apparatus comprising: a sample holder accommodating a sample and a reference sample holder accommodating a reference sample; a wave source for irradiating a wave onto the sample and the reference sample; a data collector for collecting speckle data generated due to multiple scattering of the irradiated wave by each of the sample and the reference sample; a data analyzer for receiving and analyzing the speckle data collected by the data collector, and outputting an analysis result on a display; a multi-beam reflector for splitting the wave incident from the wave source, and providing the split waves along a plurality of paths; and a beam splitter located on the plurality of paths of the waves provided by the multi-beam reflector, to change paths of waves reflected and emitted from the sample and the reference sample, and provide the waves to the data collector, wherein each of the sample and the reference sample comprises a pattern region in which a structure having a certain pattern is provided on a substrate. 6. The pattern structure inspection apparatus of claim 5 , wherein the data collector collects the speckle data in an area between the sample and the data collector or in an internal area of the data collector.
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