Top notch slit profile for mems device
US-2024381034-A1 · Nov 14, 2024 · US
US10850974B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10850974-B2 |
| Application number | US-201615571790-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 5, 2016 |
| Priority date | May 5, 2015 |
| Publication date | Dec 1, 2020 |
| Grant date | Dec 1, 2020 |
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The present disclosure relates to a method of fabricating a reflector, the reflector being at least partially reflective and at least partially transmissive for at least a wavelength of electromagnetic radiation; the method comprising: forming a first material layer defining a bottom layer; forming a sacrificial layer on the bottom layer; forming a second material layer defining a top layer on the sacrificial layer and a supporting structure connected to the bottom layer; and removing at least part of the sacrificial layer to form a cavity between the bottom layer and the top layer such that the supporting structure supports the top layer relative to the bottom layer and no further supporting structure is provided within the cavity, wherein after the at least part of the sacrificial layer is removed, at least the top layer has residual tensile stress.
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The invention claimed is: 1. A method of fabricating a distributed Bragg reflector, the reflector being at least partially reflective and at least partially transmissive for at least a wavelength of electromagnetic radiation; the method comprising: forming a first layer of a first material or material composition defining a bottom layer; forming a sacrificial layer on the bottom layer; forming a second layer of a second material or material composition defining a top layer on the sacrificial layer and a supporting structure connected to the bottom layer, the top layer comprising a membrane and an optical area of the same second material or material composition; and removing at least part of the sacrificial layer to form a cavity between the bottom layer and the top layer such that the supporting structure supports the top layer relative to the bottom layer and no further supporting structure is provided within the cavity, wherein after the at least part of the sacrificial layer is removed, at least the top layer comprising the membrane and the optical area has residual tensile stress, wherein the bottom and top layers of material, and the cavity, are a quarter of said wavelength in optical thickness. 2. The method of claim 1 , comprising changing a mechanical property of at least part of the defined top layer, wherein changing the mechanical property comprises annealing at least part of the defined top layer, without crystallizing the second material or material composition, such that compressive stress of the top layer is converted to residual tensile stress. 3. The method of claim 2 , wherein changing the mechanical property of the at least part of the top layer is conducted before removing the at least part of the sacrificial layer. 4. The method of claim 1 , wherein forming the second layer comprises depositing the second material or material composition on the sacrificial layer such that the top layer has residual tensile stress. 5. The method of claim 1 , comprising perforating the first layer and/or the second layer to form at least one perforation such that the sacrificial layer can be removed via an etching process. 6. The method of claim 5 , comprises forming a shield layer of material to be located in an optical path defined by the at least one perforation. 7. The method of claim 1 , wherein the defined cavity is an air cavity. 8. The method of claim 1 , comprising forming one or more further sacrificial layers and one or more further layers to fabricate a reflector with a greater number of periods. 9. A distributed Bragg reflector, the reflector being at least partially reflective and at least partially transmissive for at least a wavelength of electromagnetic radiation, the reflector comprising: a first layer of a first material or material composition defining a bottom layer; a second layer of a second material or material composition defining a top layer and a supporting structure, the top layer comprising a membrane and an optical area of the same second material or material composition, and the second layer being arranged to define a cavity between the top layer and the bottom layer, wherein at least the top layer has residual tensile stress, and the reflector is arranged such that the support structure supports the top layer relative to the bottom layer and no further supporting structure is provided within the defined cavity, and wherein the bottom and top layers of material, and the cavity, are a quarter of said wavelength in optical thickness. 10. The method of claim 1 , wherein the tensile stress of the top layer is below 200 MPa. 11. The method of claim 1 , wherein the method is conducted such that the defined cavity provides a substantially uniform distance between the top layer and the bottom layer. 12. The method of claim 1 , wherein the first and second material layers comprise the same material or material composition. 13. The method of claim 1 , wherein the first material layer and/or the second material layer comprises amorphous or polycrystalline silicon. 14. The method of claim 1 , wherein the first material layer and/or the second material layer comprises germanium.
based on interference in an adjustable optical cavity (interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26) · CPC title
Optical MEMS not provided for in B81B2201/042 - B81B2201/045 · CPC title
Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D67/0039) · CPC title
the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD (G02B26/0825 takes precedence; micromechanical devices in general B81B) · CPC title
containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title
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