Electro-optical device, manufacturing method for electro-optical device, and electronic apparatus

US10847741B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10847741-B2
Application numberUS-201916257478-A
CountryUS
Kind codeB2
Filing dateJan 25, 2019
Priority dateJan 26, 2018
Publication dateNov 24, 2020
Grant dateNov 24, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A first electrode, a first insulating film, a second electrode, a second insulating film, and a pixel electrode are formed on a one surface side of a first substrate of an electro-optical device. The second electrode is electrically connected [to the first electrode] via a first contact hole that penetrates the first insulating film. The second electrode and the second insulating film configure a continuous flat surface, which is the surface on the opposite side to the first substrate, and the pixel electrode is electrically connected to the second electrode. Of the second insulating film, since an inside section positioned inside a concave portion caused by the first contact hole is connected to an outside section provided on the outside of the concave portion, peeling of the inside section is unlikely to occur.

First claim

Opening claim text (preview).

What is claimed is: 1. An electro-optical device comprising: a substrate; a first electrode on a one side of the substrate; a first insulating film on a surface of the first electrode on an opposite side from the substrate; a first contact hole penetrating the first insulating film at a position overlapping in a plan view with the first electrode; a second electrode on a surface of the first insulating film on the opposite side from the substrate and electrically connected to the first electrode via the first contact hole; a second insulating film with a surface on the opposite side from the substrate and contiguous to a contiguous surface of the second electrode on the opposite side from the substrate; and a pixel electrode on a surface of the second insulating film on the opposite side from the substrate, wherein the first contact hole includes a first hole that configures a section of the first insulating film on a substrate side, and a second hole that has a larger size than the first hole and that communicates with the first hole on the opposite side from the substrate, a distance between an end portion of the first hole on the opposite side from the substrate, and an end portion of the second hole on the substrate side is substantially the same around the whole periphery of the first contact hole, the contiguous surface of the second electrode has (i) a first portion that extends from a position overlapping in a plan view with a first edge portion of an opening edge of the first contact hole, toward the outside of the first contact hole and that is in contact with the pixel electrode, and (ii) a second portion that overlaps in a plan view with the first contact hole on the substrate side with respect to the first portion and that is in contact with a surface of the second insulating film on the substrate side, and an inside section of the second insulating film inside a concave portion overlapping in a plan view with the first contact hole is connected to an outside section of the concave portion of the second insulating film at the second portion. 2. The electro-optical device according to claim 1 , wherein the second electrode includes a first section that is positioned inside the first contact hole, and a second section that, of the first edge portion and the second edge portion, only overlaps with the first edge portion, and extends from the first section to the outside of the first contact hole. 3. The electro-optical device according to claim 1 , wherein in a terminal region of the substrate, the electro-optical device includes a third electrode of the same layer as the first electrode, a second contact hole penetrating the first insulating film and the second insulating film at a position overlapping in a plan view with the third electrode and a terminal provided on a surface of the second insulating film on the opposite side to the substrate and being electrically connected to the third electrode via the second contact hole, the pixel electrode includes a first electrically conducting film, and a second electrically conducting film provided on a surface of the first electrically conducting film on the opposite side to the substrate, and the terminal is configured by an electrically conducting film of the same layer as the second electrically conducting film. 4. A manufacturing method for the electro-optical device according to claim 3 , comprising: forming the second insulating film and leveling the second insulating film to obtain a continuous flat surface formed by a surface of the second electrode and the surface of the second insulating film on the opposite side to the substrate, subsequently performing a first step for forming the first electrically conducting film on a display region in which the pixel electrode is provided; performing a second step for forming the second contact hole; performing a third step for forming the second electrically conducting film on the display region and the terminal region; and performing a fourth step for patterning the first electrically conducting film and the second electrically conducting film to form the pixel electrode and the terminal. 5. A manufacturing method for the electro-optical device according to claim 1 , the method comprising: forming the first electrode and the first insulating film; subsequently performing first etching on the first insulating film, with an etching mask including a first opening portion, provided on the surface on the opposite side to the substrate to form the first hole, the first etching being performed through the first opening portion; performing size adjustment in which the first opening portion is enlarged to form a second opening portion of a larger size than the first opening portion; and performing second etching on the first insulating film through the second opening portion to form the second hole. 6. The manufacturing method according to claim 5 for the electro-optical device, wherein in the size adjustment, the first opening portion is enlarged to form the second opening portion by removing a certain amount around an entire edge portion of the etching mask. 7. An electronic apparatus comprising: the electro-optical device according to claim 1 . 8. An electro-optical device comprising: a substrate; a first electrode on a one side of the substrate; a first insulating film on a surface of the first electrode on an opposite side from the substrate; a first contact hole penetrating the first insulating film at a position overlapping in a plan view with the first electrode; a second electrode on a surface of the first insulating film on the opposite side from the substrate and electrically connected to the first electrode via the first contact hole; a second insulating film with a surface on the opposite side from the substrate and contiguous to a contiguous surface of the second electrode on the opposite side from the substrate; a third insulating film with the first electrode on a surface of the third insulating film on the opposite side from the substrate, and a pixel electrode on a surface of the second insulating film on the opposite side from the substrate, wherein the first contact hole includes a first hole that configures a section of the first insulating film on the substrate side, and a second hole that has a larger size than the first hole and that communicates with the first hole on the opposite side to the substrate, the third insulating film includes a convex portion that protrudes to the opposite side from the substrate at a position overlapping in a plan view with the first contact hole, the contiguous surface of the second electrode has (i) a first portion that extends from a position overlapping in a plan view with a first edge portion of an opening edge of the first contact hole, toward the outside of the first contact hole and that is in contact with the pixel electrode, and (ii) a second portion that overlaps in a plan view with the first contact hole on the substrate side with respect to the first portion and that is in contact with a surface of the second insulating film on the substrate side, and an inside section of the second insulating film inside a concave portion overlapping in a plan view with the first contact hole is connected to an outside section of the concave portion of the second insulating film at the second portion.

Assignees

Inventors

Classifications

  • Electrodes · CPC title

  • characterised by their electrical, optical, physical properties; materials therefor; method of making · CPC title

  • characterised by the compositions or shapes of the interlayer dielectrics · CPC title

  • wherein the TFTs are in active matrices · CPC title

  • Interconnections, e.g. scanning lines · CPC title

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What does patent US10847741B2 cover?
A first electrode, a first insulating film, a second electrode, a second insulating film, and a pixel electrode are formed on a one surface side of a first substrate of an electro-optical device. The second electrode is electrically connected [to the first electrode] via a first contact hole that penetrates the first insulating film. The second electrode and the second insulating film configure…
Who is the assignee on this patent?
Seiko Epson Corp
What technology area does this patent fall under?
Primary CPC classification G02F1/13439. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 24 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).