MRAM array having reference cell structure and circuitry that reinforces reference states by induced magnetic field

Patent metadata

Field	Value
Publication number	US-10847199-B2
Application number	US-201916362329-A
Country	US
Kind code	B2
Filing date	Mar 22, 2019
Priority date	Mar 22, 2019
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

A magnetic memory device that includes magnetic read elements and magnetic reference cells. The magnetic reference cells include magnetic tunnel junction elements having the same construction as the magnetic read elements. The reference cells produce a reference signal that can be compared with a read signal from the magnetic read element to determine whether the read element is in a high or low resistance state. During creation of the reference signal, the current passes in such a way so that reference cells are forced to be in the right state while causing no disturbance to the reference cell. The reference cell includes magnetic tunnel junction elements and also includes circuitry configured to produce a magnetic field that biases the magnetic tunnel junction elements of the reference cell into a desired magnetic state to ensure that the desired magnetic state of the reference cell magnetic tunnel junction elements is maintained.

First claim

What is claimed is:

1. A magnetic memory apparatus, comprising:
a reference cell structure including a magnetic tunnel junction element and circuitry formed adjacent to the magnetic tunnel junction element, the circuitry being configured to produce a magnetic field that reinforces a desired magnetic state of the magnetic tunnel junction element;
wherein the circuitry further comprises first and second electrically conductive lines formed on opposite sides of the magnetic tunnel junction element, wherein the first electrically conductive line is configured to have a current flowing in a first direction and the second electrically conductive line is configured to have a current flowing in a second direction that is opposite the first direction.

2. The magnetic memory apparatus as in claim 1 , wherein the magnetic tunnel junction element is a first magnetic tunnel junction element having a first magnetic state, the reference cell structure further comprising a second magnetic tunnel junction element having a second magnetic state and wherein the circuitry is configured to produce a magnetic field that reinforces the first magnetic state of the first magnetic tunnel junction element and also to produce a magnetic field that reinforces the second magnetic state of the second magnetic tunnel junction element.

3. The magnetic memory apparatus as in claim 1 , wherein the memory cell structure comprises a first pair of magnetic tunnel junction elements having a first magnetic state and connected in parallel with one another, a second pair of magnetic tunnel junctions having a second memory state and connected in parallel with one another, the first and second pairs of magnetic memory elements being connected in series with one another, and wherein the circuitry is configured to generate a magnetic field that reinforces the first magnetic state of the first pair of magnetic tunnel junction elements and to produce a magnetic field that reinforces the second magnetic state of the second pair of magnetic tunnel junction elements.

4. The magnetic memory apparatus as in claim 3 , wherein the circuitry comprises first and second electrically conductive lines formed adjacent to first and second sides of the first pair of magnetic tunnel junction elements and adjacent to opposite first and second sides of the second pair of magnetic tunnel junction elements.

5. The magnetic memory apparatus as in claim 1 , further comprising circuitry for supplying a write current to the first pair of magnetic tunnel junction elements to switch the first pair of magnetic tunnel junction elements to a low resistance state and for supplying a write current to the second pair of magnetic tunnel junctions to switch the second pair of magnetic tunnel junction elements to a high resistance state.

6. A magnetic memory apparatus, comprising:
a comparator;
at least one memory element connected with the comparator, the memory element being configured to send a read signal to the comparator;
at least one reference cell connected with the comparator, the reference cell being configured to send a reference signal to the comparator for comparison with the read signal from the memory element, the reference structure comprising:
a first pair of magnetic tunnel junction elements connected in parallel with one another;
a second pair of magnetic tunnel junction elements, the second pair of magnetic tunnel junction elements being connected in series with the first pair of magnetic tunnel junction elements; and
circuitry configured to generate a magnetic field that biases a magnetization of the first pair of magnetic tunnel junction elements in a first direction and that biases a magnetization of the second pair of magnetic tunnel junction elements in a second direction that is opposite to the first direction;
wherein the circuitry includes an electrically conductive line that passes by a first side of the first pair of magnetic memory elements and a second, opposite side of the second pair of magnetic memory elements.

7. The magnetic memory element as in claim 6 , wherein the circuitry includes first and second electrically conductive lines arranged adjacent to first and second sides of the first pair of magnetic tunnel junction elements and adjacent to opposite sides of the second pair of magnetic tunnel junction elements.

8. The magnetic memory apparatus as in claim 6 , wherein the circuitry includes first and second electrically conductive lines formed adjacent to opposite sides of the first pair of magnetic tunnel junction elements and wherein the electrically conductive lines cross over one another before extending adjacent to opposite sides of the second pair of magnetic memory tunnel junction elements.

9. The magnetic memory apparatus as in claim 8 , further comprising circuitry for supplying an electrical current in a first direction through the first electrically conductive line and to supply an electrical current in a second, opposite direction through the second electrically conductive line.

10. The magnetic memory apparatus as in claim 6 , wherein the circuitry generates a magnetic field in a first direction at the location of the first pair of magnetic tunnel junction elements and in a second, opposite direction at the location of the second pair of magnetic memory elements.

11. The magnetic memory apparatus as in claim 6 , further comprising circuitry for supplying a write current to the first pair of magnetic tunnel junction elements to switch the first pair of magnetic tunnel junction elements to a low resistance state and for supplying a write current to the second pair of magnetic tunnel junctions to switch the second pair of magnetic tunnel junction elements to a high resistance state.

12. A magnetic memory apparatus, comprising:
a first array comprising a plurality of magnetic memory elements and a plurality of reference cells;
a second array comprising a plurality of magnetic memory elements and a and a plurality of reference cells; and
a comparator connected with the first and second arrays; wherein
each of the memory cells comprises:
a first pair of magnetic tunnel junction elements connected in parallel with one another;
a second pair of magnetic tunnel junction elements connected in parallel with one another, the second pair of magnetic tunnel junction elements being connected in series with the first pair of magnetic tunnel junction elements; and
circuitry configured to generate a magnetic field in a first direction at a location of the first pair of magnetic tunnel junction elements and in a second direction at a location of the second pair of magnetic memory elements;
wherein the circuitry comprises an electrically conductive line passing by a first side of the first pair of magnetic tunnel junction elements and a second side of the second pair of magnetic tunnel junction elements.

13. The magnetic memory apparatus as in claim 12 , further comprising circuitry for delivering a read signal from a memory element of the first array to the comparator and for delivering a reference signal from a reference cell of the second array to the comparator.

14. The magnetic memory apparatus as in claim 12 , further comprising circuitry configured to deliver a write current to each of the reference cells so as to switch the first pair of magnetic tunnel junction elements to a low resistance state and switch the second pair of magnetic tunnel junction elements to a high resistance state.

15. The magnetic memory apparatus as in claim 12 , wherein the circuitry comprises first and second electrically conductive lines, the first electrically conductive lin

Assignees

• Spin Memory Inc

Inventors

• Kim Kuk-Hwan
• Bozdag Kadriye Deniz
• Ryan Eric Michael

Classifications

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L27/224

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic