Composition for forming resist underlayer film and method for forming resist pattern using same

Patent metadata

Field	Value
Publication number	US-10844167-B2
Application number	US-201716081668-A
Country	US
Kind code	B2
Filing date	Feb 23, 2017
Priority date	Mar 9, 2016
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula ( 1 ), a cross-linkable compound, a cross-linking catalyst, and a solvent:

wherein R 1 and R 2 are each independently a C 1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.

First claim

The invention claimed is:

1. A composition for forming a resist underlayer film comprising
a copolymer having a structural unit of the following formula (1):

wherein R 1 and R 2 are each independently a C 1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group, wherein the arylene group is a phenylene group or a naphthylene group,
a glycoluril compound selected from the group consisting of 1,3,4,6-tetraallylglycoluril, 1,3,4,6-tetraglycidylglycoluril, 1,3,4,6-tetrakis (2-carboxyethyl) glycoluril, 1,3,4,6-tetrakis (2-hydroxyethyl) glycoluril and 1,3,4,6-tetrakis (2-mercaptoethyl) glycoluril,
a compound different from the glycoluril compound, wherein the compound is at least one compound selected from the group consisting of a nitrogen-containing compound having at least two nitrogen atoms bonded to hydroxymethyl groups or alkoxymethyl groups, an aromatic compound having at least two hydroxymethyl groups or alkoxymethyl groups, a compound having at least two epoxy groups, and a compound having at least two blocked isocyanate groups,
a cross-linking catalyst, and
a solvent.

2. The composition for forming a resist underlayer film according to claim 1 , further comprising a surfactant.

3. The composition for forming a resist underlayer film according to claim 1 , wherein the copolymer has a weight average molecular weight of 1,000 to 10,000.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Ogata Hiroto
• Usui Yuki
• Tamura Mamoru
• Kishioka Takahiro

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• C08G63/42

  Cyclic ethers (C08G59/00 takes precedence); Cyclic carbonates; Cyclic sulfites; Cyclic orthoesters · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• C08G63/688 Primary

  containing sulfur · CPC title