Optoelectronic devices having spatially varying distribution of quantum confined nanostructures

Patent metadata

Field	Value
Publication number	US-10840676-B2
Application number	US-201815976760-A
Country	US
Kind code	B2
Filing date	May 10, 2018
Priority date	May 10, 2018
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

An optical device that includes: a base layer; a first region supported by the base layer, the first region including a first plurality of quantum-confined nanostructures and having a first density of quantum-confined nanostructures; a second region supported by the base layer, the first and second regions being non-overlapping regions, the second region having a second density of quantum-confined nanostructures lower than the first density; and an optical confinement structure supported by the base layer and configured to guide at least one transverse optical mode between a first end and a second end of the optical confinement structure. The first region substantially overlaps with the at least one transverse optical mode, and the first density varies across a cross-section of the optical device.

First claim

What is claimed is:

1. An optical device, comprising:
a base layer;
a first region supported by the base layer, the first region comprising a first plurality of quantum-confined nanostructures and having a first density of quantum-confined nanostructures;
a second region supported by the base layer, the first and second regions being non-overlapping regions, the second region having a second density of quantum-confined nanostructures lower than the first density; and
an optical confinement structure supported by the base layer and configured to guide at least one transverse optical mode between a first end and a second end of the optical confinement structure,
wherein the first region substantially overlaps with the at least one transverse optical mode, and
wherein the first density varies across a cross-section of the optical device.

2. The optical device of claim 1 , wherein the cross-section is a longitudinal cross-section of the optical device, the longitudinal cross-section being parallel to a propagation direction of the at least one transverse optical mode, and
wherein the first density of quantum-confined nanostructures varies along the propagation direction of the at least one transverse optical mode.

3. The optical device of claim 2 , wherein the first density increases or decreases along the propagation direction of the at least one transverse optical mode in at least a portion of the first region.

4. The optical device of claim 3 , wherein the first region comprises a plurality of sub-regions having different densities of quantum-confined nanostructures, and
wherein the optical device further comprises a plurality of electrodes electrically coupled to the plurality of sub-regions.

5. The optical device of claim 1 , further comprising:
a first reflector disposed at the first end of the optical confinement structure and a second reflector disposed at the second end of the optical confinement structure,
wherein the first and second reflectors are configured to reflect at least some incident light at a first wavelength and form an optical cavity having at least one longitudinal optical mode.

6. The optical device of claim 5 , wherein the first and second reflectors are arranged along a direction orthogonal to a surface of the base layer.

7. The optical device of claim 5 , wherein the first and second reflectors each comprise one of: distributed Bragg reflector, dielectric reflector, and metal reflector.

8. The optical device of claim 5 , wherein the first density varies along a propagation direction in correspondence to an intensity profile of one of the at least one longitudinal optical mode.

9. The optical device of claim 5 , wherein the cross-section is a longitudinal cross-section of the optical device, the longitudinal cross-section being parallel to a propagation direction of the at least one transverse optical mode,
wherein the first density of quantum-confined nanostructures varies along the propagation direction of the at least one transverse optical mode,
wherein the first region comprises a plurality of sub-regions having different densities of quantum-confined nanostructures, and
wherein the optical device further comprises a plurality of electrodes electrically coupled to the plurality of sub-regions.

10. The optical device of claim 9 , wherein during operation, the quantum-confined nanostructures of the plurality of sub-regions are electrically pumped through the plurality of electrodes, and the optical device generates laser light corresponding to one of the at least one longitudinal optical mode.

11. The optical device of claim 1 , wherein the cross-section is a transverse cross-section of the optical device, the transverse cross-section being orthogonal to a propagation direction of the at least one transverse optical mode, and
wherein the first density of quantum-confined nanostructures varies along the transverse cross-section in correspondence to an intensity profile of a transverse optical mode of the at least one transverse optical mode.

12. The optical device of claim 1 , further comprising first and second electrodes electrically coupled to the first region.

13. The optical device of claim 12 , wherein during operation, the first plurality of quantum-confined nanostructures are electrically pumped through the first and second electrodes and provide an optical gain.

14. The optical device of claim 12 , wherein during operation, the first plurality of quantum-confined nanostructures generate a photocurrent in response to light of the at least one transverse optical mode and output the photocurrent through the first and second electrodes.

15. The optical device of claim 1 , wherein the first plurality of quantum-confined nanostructures comprises a material selected from the group consisting of Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Gallium Arsenide Phosphide (GaAsP), Aluminum Gallium Indium Phosphide (AlGaInP), Gallium(III) Phosphide (GaP), Gallium Arsenide Phosphide (GaAsP), Aluminum Gallium Phosphide (AlGaP), Indium Gallium Nitride (InGaN), Gallium(III) Nitride (GaN), Zinc Selenide (ZnSe), Boron Nitride (BN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), and Aluminum Gallium Indium Nitride (AlGaInN).

16. The optical device of claim 1 , wherein the quantum-confined nanostructures comprise at least one of quantum dots, quantum dashes, quantum well, or quantum wires.

17. The optical device of claim 1 , wherein the first region comprises a plurality of layers of quantum-confined nanostructures.

18. The optical device of claim 1 , wherein the second region further comprises passive optical components.

19. A method for fabricating an optical device, comprising:
providing a base layer;
forming a plurality of quantum-confined nanostructures on first and second regions supported by the base layer, the first and second regions being non-overlapping regions;
etching at least a portion of the plurality of quantum-confined nanostructures within the second region by performing a first photoelectrochemical (PEC) etching step that comprises exposing the second region to an etchant while illuminating the second region with light at a first wavelength, such that a second density of quantum-confined nanostructures of the second region is lower than a first density of quantum-confined nanostructures of the first region;
etching at least a portion of the plurality of quantum-confined nanostructures within the first region by performing a second PEC etching step that comprises exposing the first region to an etchant while illuminating the first region with patterned light at the first wavelength, such that the first density varies across a cross-section of the optical device; and
forming an optical confinement structure on the base layer, the optical confinement structure being configured to guide at least one transverse optical mode that substantially overlaps with the first region.

20. The method of claim 19 , wherein forming the plurality of quantum-confined nanostructures on the first and second regions supported by the base layer comprises:
exposing the first and second regions to a quantum-confined nanostructure forming environment while illuminating the first region with light at a second wavelength.

Assignees

• X Dev Llc

Inventors

• SCHUBERT Martin Friedrich
• Grundmann Michael Jason
• Lu Jesse
• Adolf Brian John

Classifications

• H10F30/20

  the devices having potential barriers, e.g. phototransistors · CPC title

• H10F77/143

  comprising quantum structures · CPC title

• H10F77/12485

  comprising nitride compounds, e.g. InGaN · CPC title

• H01S5/227 Primary

  Buried mesa structure {; Striped active layer} · CPC title

• H01S5/341

  Structures having reduced dimensionality, e.g. quantum wires · CPC title