Semiconductor layer sequence

Patent metadata

Field	Value
Publication number	US-10840411-B2
Application number	US-201716310726-A
Country	US
Kind code	B2
Filing date	Jul 5, 2017
Priority date	Jul 5, 2016
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

A semiconductor layer sequence is disclosed. In an embodiment the semiconductor layer sequence includes an n-conducting n-region, a p-conducting p-region and an active zone having at least one quantum well located between the n-region and the p-region, wherein the semiconductor layer sequence includes AlInGaN, wherein the n-region comprises a superlattice, wherein the superlattice has a structural unit which repeats at least three times, wherein the structural unit comprises at least one AlGaN layer, at least one GaN layer and at least one InGaN layer, wherein an intermediate layer is disposed between the active zone and the superlattice, wherein the intermediate layer comprises either n-doped GaN or n-doped GaN together with n-doped InGaN so that the intermediate layer is free of aluminum, and wherein the intermediate layer directly adjoins the active zone and the superlattice.

First claim

The invention claimed is:

1. A semiconductor layer sequence comprising:
an n-conducting n-region;
a p-conducting p-region; and
an active zone having at least one quantum well located between the n-region and the p-region, the active zone being configured to generate radiation,
wherein the semiconductor layer sequence comprises AlInGaN,
wherein the n-region comprises a superlattice,
wherein the superlattice has a structural unit which repeats at least three times,
wherein the structural unit comprises at least one AlGaN layer, at least one GaN layer and at least one InGaN layer,
wherein the structural unit has a thickness of at least 2 nm and at most 15 nm,
wherein an intermediate layer is disposed between the active zone and the superlattice and a distance between the active zone and the superlattice is at least 4 nm and at most 20 nm,
wherein the intermediate layer comprises either n-doped GaN or n-doped GaN together with n-doped InGaN so that the intermediate layer is free of aluminum,
wherein the intermediate layer directly adjoins the active zone and the superlattice,
wherein the intermediate layer is composed of n-doped GaN layers and of n-doped InGaN layers, and wherein the intermediate layer comprises highly doped regions with a dopant concentration of at least 5×10 18 1/cm 3 .

2. The semiconductor layer sequence according to claim 1 , wherein the structural unit is composed of the following four layers in the specified immediate sequence:
the AlGaN layer, a first GaN layer, the InGaN layer, and a second GaN layer.

3. The semiconductor layer sequence according to claim 2 , wherein the first and the second GaN layers are of the same design.

4. The semiconductor layer sequence according to claim 2 , wherein the first and the second GaN layers have different thicknesses.

5. The semiconductor layer sequence according to claim 1 , wherein the structural unit is composed of the following three layers in the specified immediate sequence: the AlGaN layer, the GaN layer, and the InGaN layer.

6. The semiconductor layer sequence according to claim 1 , wherein an average thickness of the AlGaN layer is between 0.4 nm and 5 nm inclusive, wherein an average thickness of at least one GaN layer is between 0.2 nm and 3 nm inclusive, wherein an average thickness of the InGaN layer is between 0.6 nm and 6 nm inclusive, and wherein the AlGaN layer is thicker than the at least one GaN layer.

7. The semiconductor layer sequence according to claim 1 , wherein an aluminum content of the AlGaN layer is between 5% and 30% inclusive and an indium content of the InGaN layer is between 0.5% and 10% inclusive, and wherein the aluminum content is greater than the indium content.

8. The semiconductor layer sequence according to claim 7 , wherein the aluminum content of the AlGaN layer is between 10% and 20% inclusive and the indium content of the InGaN layer is between 1% and 6% inclusive, and wherein the AlGaN layer and the InGaN layer are of equal thickness with a tolerance of at most 0.5 nm.

9. The semiconductor layer sequence according to claim 1 , wherein the AlGaN layer is undoped and the InGaN layer and the at least one GaN layer are n-doped with silicon with a dopant concentration of between 1×10 18 1/cm 3 and 1×10 19 1/cm 3 inclusive.

10. The semiconductor layer sequence according to claim 1 , wherein the structural unit is repeated at least seven times and at most 30 times, and wherein the superlattice consists of the recurring structural units which directly follow one another.

11. The semiconductor layer sequence according to claim 1 , wherein the superlattice is a barrier for holes so that holes cannot pass through the superlattice.

12. The semiconductor layer sequence according to claim 1 , wherein the active zone is configured to generate the radiation having a wavelength of maximum intensity between 365 nm and 405 nm inclusive, and wherein the radiation is incoherent radiation and the semiconductor layer sequence is a light-emitting diode.

13. The semiconductor layer sequence according to claim 1 , wherein the intermediate layer consists essentially of doped GaN and has a higher dopant concentration than the doped layers of the superlattice.

Assignees

• Osram Oled Gmbh

Inventors

• Bergbauer Werner

Classifications

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title

• H10H20/811 Primary

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title

• H10H20/825 Primary

  containing nitrogen, e.g. GaN · CPC title

• H01L33/0025

  Electricity · mapped topic