Line-integrated switch and method for producing a line-integrated switch
US-2019172811-A1 · Jun 6, 2019 · US
US10840207B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10840207-B2 |
| Application number | US-201716308157-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2017 |
| Priority date | Jun 14, 2016 |
| Publication date | Nov 17, 2020 |
| Grant date | Nov 17, 2020 |
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Line-integrated switch having at least a first metal flat part 2, at least a second metal flat part 8, wherein the flat parts are arranged in an overlapping region with the wide sides thereof one above the other and in the overlapping region a semi-conductor switch 18 is arranged between the flat parts 2, 8 so as to connect the flat parts 2, 8 to each other in a switching manner. A simple construction is possible in that at least in the overlapping region a first of the flat parts 2, at a side facing the second of the flat parts 8, is coated at least partially with an insulation, wherein a recess is provided in the insulation in a contact region 10 and the semi-conductor switch 18 in the contact region 10 is electrically contacted with the flat part 8.
Opening claim text (preview).
The invention claimed is: 1. Multi-layer cable with a line-integrated switch comprising: at least a first strand made from a metal flat part, at least a second strand made from a metal flat part, wherein the stands are guided in a common isolation, wherein each strand a respective flat part are arranged in respective overlapping region with the wide sides thereof one above the other and in the overlapping region a semiconductor switch is arranged between the respective strand and the respective flat part so as to connect the strands with the flat part to each other in a switching manner, wherein at least in the overlapping region a respective strand at a side facing the second of the respective flat part is coated at least partially with an insulation, wherein a recess is provided in the insulation in a contact region and the semiconductor switch is electrically contacted with the respective strand in the contact region, wherein the longitudinal axes of the respective strand and the respective flat part are formed in the region of the overlapping region in an angular manner. 2. Line-integrated switch according to claim 1 , wherein the respective semiconductor switch is soldered in the contact region to the respective strand and/or in that the contact region is tin-plated. 3. Line-integrated switch according to claim 1 , wherein the first respective flat part is coated with an at least three-layered structure, wherein a conductive layer is guided between two insulation layers. 4. Line-integrated switch according to claim 3 , wherein the insulation layer is formed from at least one printed circuit board material and the printed circuit board material is applied directly to the respective flat part. 5. Line-integrated switch according to claim 4 , wherein on the printed circuit board material the conductive layer is applied, in particular in that the conductive layer is a copper layer, wherein the conductive layer forms in particular strip conductors. 6. Line-integrated switch according to claim 5 , wherein a protective layer, in particular a solder resist is applied to the conductive layer. 7. Line-integrated switch according to claim 5 , wherein the conductive layer has a contact pad for a gate contact of the semiconductor switch. 8. Line-integrated switch according to claim 1 , wherein at least in the overlapping region the respective flat part is coated at a side facing the respective strand at least partially with a metal coating, so as to form a connection region, wherein the semiconductor switch is soldered to the respective flat part in the connection region. 9. Line-integrated switch according to claim 1 , wherein at least in the overlapping region the respective flat part is coated at the side facing the respective strand with an insulator, in particular with an insulation paint. 10. Line-integrated switch according to claim 1 , wherein at one of the respective strands or the respective flat parts is formed from an aluminium material or a copper material. 11. Line-integrated switch according to claim 1 , wherein on the respective flat part at least one metal coating is roll-bonded on the flat part. 12. Line-integrated switch according to claim 8 , wherein the semiconductor switch is connected with the source and drain contacts thereof to the contact region and the connection region. 13. Multi-layer cable with a line-integrated switch comprising: at least a first strand made from a metal flat part, at least a second strand made from a metal flat part, wherein the stands are guided in a common isolation, wherein each strand a respective flat part are arranged in respective overlapping region with the wide sides thereof one above the other and in the overlapping region a semiconductor switch is arranged between the respective strand and the respective flat part so as to connect the strands with the flat part to each other in a switching manner, wherein at least in the overlapping region a respective strand at a side facing the second of the respective flat part is coated at least partially with an insulation, wherein a recess is provided in the insulation in a contact region and the semiconductor switch is electrically contacted with the respective strand in the contact region, wherein the first respective flat part is coated with an at least three-layered structure, wherein a conductive layer is guided between two insulation layers, wherein the insulation layers include at least one printed circuit board material and the printed circuit board material is applied directly to the respective flat part, wherein on the printed circuit board material the conductive layer is applied, wherein a solder resist is applied as a protective layer to the conductive layer. 14. Line-integrated switch according to claim 13 , wherein the respective semiconductor switch is soldered in the contact region to the respective strand and/or in that the contact region is tin-plated. 15. Line-integrated switch according to claim 13 , wherein the conductive layer has a contact pad for a gate contact of the semiconductor switch. 16. Line-integrated switch according to claim 13 , wherein at least in the overlapping region the respective flat part is coated at a side facing the respective strand at least partially with a metal coating, so as to form a connection region, wherein the semiconductor switch is soldered to the respective flat part in the connection region. 17. Line-integrated switch according to claim 13 , wherein on the respective flat part at least one metal coating is roll-bonded on the flat part. 18. Line-integrated switch according to claim 13 , wherein the longitudinal axes of the respective strand and the respective flat part are formed in the region of the overlapping region in an angular manner. 19. Line-integrated switch according to claim 16 , wherein the semiconductor switch is connected with the source and drain contacts thereof to the contact region and the connection region.
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