Chemical mechanical polishing for hybrid bonding

Patent metadata

Field	Value
Publication number	US-10840205-B2
Application number	US-201816133299-A
Country	US
Kind code	B2
Filing date	Sep 17, 2018
Priority date	Sep 24, 2017
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

Methods for hybrid bonding include depositing and patterning a dielectric layer on a substrate to form openings in the dielectric layer, depositing a barrier layer over the dielectric layer and within a first portion of the openings, and depositing a conductive structure over the barrier layer and within a second portion of the openings not occupied by the barrier layer, at least a portion of the conductive structure in the second portion of the openings coupled or contacting electrical circuitry within the substrate. The conductive structure is polished to reveal portions of the barrier layer deposited over the dielectric layer and not in the second portion of the openings. Further, the barrier layer is polished with a selective polish to reveal a bonding surface on or at the dielectric layer.

First claim

What is claimed is:

1. A component comprising:
a first substrate comprising at least a first planar dielectric layer, the first planar dielectric layer including a first arrangement of conductive structures each having a width of at least 5 microns and a second arrangement of conductive structures, the second arrangement of conductive structures on a same side of the first substrate as the first arrangement of conductive structures; and
a second substrate directly hybrid bonded to the first substrate, the second substrate comprising at least a second planar dielectric layer directly bonded to the first dielectric layer, the second planar dielectric layer including a third arrangement of conductive structures, at least one of the conductive structures of the third arrangement of conductive structures on the second substrate directly bonded to at least one of the conductive structures of the first arrangement of conductive structures on the first substrate,
wherein a pitch of the first arrangement of the conductive structures on the first substrate is at least 1.2 times a width of at least one of the conductive structures of the first arrangement on the first substrate,
and wherein a region free of conductive structures laterally separates the first arrangement of conductive structures from the second arrangement of conductive structures by a distance greater than the pitch of the first arrangement.

2. A component according to claim 1 , wherein the second substrate further comprises a fourth arrangement of conductive structures, the fourth arrangement of conductive structures on a same side of the second substrate as the third arrangement of conductive structures, at least one of the conductive structures of the fourth arrangement of conductive structures on the second substrate directly bonded to at least one of the conductive structures of the second arrangement of conductive structures on the first substrate.

3. A component according to claim 2 , wherein the central region comprises less than half of the area of the bonding interface.

4. A component according to claim 1 , wherein the region free of conductive structures is a central region along a bonding interface between the first and second substrate.

5. A component according to claim 1 , wherein the pitch of the first arrangement of conductive structures is different from a pitch of the second arrangement of conductive structures in the first substrate.

6. The component of claim 5 , wherein at least one of the first conductive structures in the first arrangement has a width that is different than a width of at least one of the second structures in the second arrangement.

7. The component of claim 6 , wherein the first arrangement is separated from the second arrangement by the distance that is different than either the pitch of the first arrangement or the pitch of the second arrangement.

8. The component of claim 1 , wherein the second arrangement of conductive structures has an irregular pattern.

9. The component of claim 1 , wherein the second substrate includes microelectronic storage devices.

10. The component of claim 1 , wherein the conductive structures are composed of copper, a copper alloy, or nickel.

11. The component of claim 1 , wherein an interface between the first substrate and the second substrate includes nitrogen.

12. A component comprising:
a first substrate comprising at least a first planar dielectric layer, the first planar dielectric layer including a first arrangement of first conductive structures having a first pitch and a second arrangement of second conductive structures having a second pitch different from the first pitch, the first and second arrangements being on a same side of the first substrate; and
a second substrate directly hybrid bonded to the first substrate, the second substrate comprising at least a second planar dielectric layer directly bonded to the first dielectric layer, the second planar dielectric layer including a third arrangement of third conductive structures and a fourth arrangement of fourth conductive structures, the third and fourth arrangements being on a same side of the second substrate, at least one of the third conductive structures on the second substrate directly bonded to at least one of the first conductive structures on the first substrate and at least one of the fourth conductive structures on the second substrate directly bonded to at least one of the second conductive structures on the first substrate.

13. The component of claim 12 , wherein at least one of the first conductive structures in the first arrangement has a width that is different than a width of at least one of the second conductive structures in the second arrangement.

14. The component of claim 12 , wherein a pitch of the first arrangement of first conductive structures is at least 1.2 times a width of at least one of the first conductive structures.

15. The component of claim 12 , wherein the first substrate further comprises a first region with no conductive structures on the same side of the first substrate as the first and second arrangements along a bonding interface between the first and second substrates.

16. The component of claim 15 , wherein the first region is in a central region along the bonding interface between the first and second substrates, and wherein the central region comprises less than half of the area of the bonding interface.

17. The component of claim 12 , wherein the first arrangement is separated from the second arrangement by a distance that is greater than either the first pitch of the first arrangement or the second pitch of the second arrangement, and wherein a region separating the first arrangement from the second arrangement is free of conductive structures.

18. The component of claim 12 , wherein widths of the first conductive structures in the first arrangement are uniform.

19. The component of claim 12 , wherein a pitch of the first conductive structures in the first arrangement is uniform.

20. A component comprising:
a first substrate comprising at least a first planar dielectric layer, the first planar dielectric layer including a first arrangement of first conductive structures and a second arrangement of second conductive structures, wherein at least one of the first conductive structures in the first arrangement has a width that is different than a width of at least one of the second conductive structures in the second arrangement, the first and second arrangements being on a same side of the first substrate; and
a second substrate directly hybrid bonded to the first substrate, the second substrate comprising at least a second planar dielectric layer directly bonded to the first dielectric layer, the second planar dielectric layer including a third arrangement of third conductive structures and a fourth arrangement of fourth conductive structures, the third and fourth arrangements being on a same side of the second substrate, at least one of the third conductive structures on the second substrate directly bonded to at least one of the first conductive structures on the first substrate and at least one of the fourth conductive structures on the second substrate directly bonded to at least one of the second conductive structures on the first substrate.

21. The component of claim 20 , wherein the first arrangement of first conductive structures has a pitch that is different from a pitch of the second arrangement of second conductive structures.

22. The compon

Assignees

• Invensas Bonding Tech Inc

Inventors

• Fountain Jr Gaius Gillman
• Mandalapu Chandrasekhar
• Uzoh Cyprian Emeka
• Theil Jeremy Alfred

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H10W72/9445

  Top-view layouts, e.g. mirror arrays · CPC title

• H10W72/921

  Structures or relative sizes of bond pads · CPC title